2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com * Pb-Free Packages are Available* 200 mAMPS 60 VOLTS RDS(on) = 5 MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) VGS VGSM 20 40 ID 200 500 Drain Current - Continuous - Pulsed N-Channel D Vdc Vpk mAdc IDM Total Power Dissipation @ TC = 25C Derate above 25C PD 350 2.8 mW mW/C Operating and Storage Temperature Range TJ, Tstg -55 to +150 C G S MARKING DIAGRAM & PIN ASSIGNMENT TO-92 CASE 29 Style 22 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol Max Unit RJA 357 C/W TL 300 12 2N7000 YWW 3 C 1 Source Y WW = Year = Work Week 3 Drain 2 Gate ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 January, 2004 - Rev. 5 1 Publication Order Number: 2N7000/D 2N7000 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 - Vdc - - 1.0 1.0 Adc mAdc OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) IDSS Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSSF - -10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 3.0 Vdc Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) rDS(on) - - 5.0 6.0 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) VDS(on) - - 2.5 0.45 On-State Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Id(on) 75 - mAdc Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gfs 100 - mhos Ciss - 60 pF Coss - 25 Crss - 5.0 ton - 10 toff - 10 ON CHARACTERISTICS (Note 1) Ohm Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance ((VDS = 25 V,, VGS = 0,, f=1 1.0 0 MH MHz)) SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time (VDD = 15 V, ID = 500 mA, RG = 25 , RL = 30 , Vgen = 10 V) Turn-Off Delay Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 ns 2N7000 2.0 1.0 VDS = 10 V TA = 25C 1.6 VGS = 10 V 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 0.6 0.4 0.2 10 0 VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics 2.4 1.8 25C 125C Figure 1. Ohmic Region 2.0 -55 C +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 3. Temperature versus Static Drain-Source On-Resistance -20 +20 +60 T, TEMPERATURE (C) +100 Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 +140 2N7000 ORDERING INFORMATION Device 2N7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP 2N7000RLRPG 2N7000ZL1 2N7000ZL1G Package Shipping TO-92 1000 Unit/Box TO-92 (Pb-Free) 1000 Unit/Box TO-92 2000 Tape & Reel TO-92 (Pb-Free) 2000 Tape & Reel TO-92 2000 Ammo Pack TO-92 (Pb-Free) 2000 Ammo Pack TO-92 2000 Ammo Pack TO-92 (Pb-Free) 2000 Ammo Pack TO-92 2000 Ammo Pack TO-92 (Pb-Free) 2000 Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 2N7000 PACKAGE DIMENSIONS TO-92 CASE 29-11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X-X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN N http://onsemi.com 5 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- 2N7000 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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American Technical Support: 800-282-9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. 2N7000/D