AT-41486
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Data Sheet
Features
•Low Noise Figure:
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
•High Associated Gain:
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
•High Gain-Bandwidth Product: 8.0 GHz Typical fT
•Surface Mount Plastic Package
•Tape-and-Reel Packaging Option Available
•Lead-free Option Available
86 Plastic Package
Description
Avago’s AT-41486 is a general purpose NPN bipolar
transistor that offers excellent high frequency perfor-
mance. The AT-41486 is housed in a low cost surface
mount .085" diameter plastic package. The 4 micron
emitter-to-emitter pitch enables this transistor to be
used in many different functions. The 14 emitter finger
interdigitated geometry yields an intermediate sized
transistor with impedances that are easy to match for
low noise and moderate power applications. Applica-
tions include use in wireless systems as an LNA, gain
stage, buffer, oscillator, and mixer. An optimum noise
match near 50 Ω at 900 MHz, makes this device easy to
use as a low noise amplifier.
The AT-41486 bipolar transistor is fabricated using
Avago’s 10 GHz f
T
Self-Aligned-Transistor (SAT) pro-
cess. The die is nitride passivated for surface protec-
tion. Excellent device uniformity, performance and
reliability are produced by the use of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication of this device.
1
4
3
2
EMITTER
BASE
EMITTE
R
COLLECTOR
Pin Connections
414
2
AT-41486 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
ICCollector Current mA 60
PTPower Dissipation [2,3] mW 500
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[2,4]:
θjc = 165°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6 mW/°C for
TC > 68°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S21E|2Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 1.0 GHz dB 17.5
f = 2.0 GHz 11.5
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 18.0
VCE = 8 V, IC = 25 mA
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 13.5
NFOOptimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.4 1.8
f = 2.0 GHz 1.7
f = 4.0 GHz 3.0
GAGain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 17.0 18.0
f = 2.0 GHz 13.0
f = 4.0 GHz 9.0
fTGain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA —30 150 270
ICBO Collector Cutoff Current; VCB = 8 V µA 0.2
IEBO Emitter Cutoff Current; VEB = 1 V µA 1.0
CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.25
Note:
1. For this test, the emitter is grounded.
Ordering Information
Part Numbers No. of Devices Comments
AT-41486-BLK 100 Bulk
AT-41486-BLKG 100 Bulk
AT-41486-TR1 1000 7" Reel
AT-41486-TR1G 1000 7" Reel
AT-41486-TR2 4000 13" Reel
AT-41486-TR2G 4000 13" Reel
Note: Order part number with a “G” suffix if lead-free option
is desired.
3
AT-41486 Typical Performance, TA = 25°C
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10 mA.
GAIN (dB)
I
C
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
GAIN (dB)
0 10203040
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V
CE
= 8 V.
10 V
4 V
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 25 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
I
C
(mA)
GAIN (dB)
I
C
(mA)
Figure 4. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V,
f = 2.0 GHz.
24
20
16
12
8
4
G
1 dB
(dB) P
1 dB
(dBm)
0 10203040
P
1dB
G
1dB
24
21
18
15
12
9
6
3
0
8
6
4
2
0
NF (dB)
4
3
2
1
NF
O
(dB)
0.5 2.01.0 3.0 4.0 5.0
15
14
13
12
11
G
A
G
A
NF
O
NF
O
G
A
NF
O
NF
50 Ω
6 V
0 10203040
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
6
4
2
0
NF
O
(dB)
16
14
12
10
8
I
C
(mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|S
21E
|2
GAIN (dB)
0 10203040
1.0 GHz
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S
21E
|2
10 V
4 V
6 V
4
AT-41486 Typical Scattering Parameters, Common Emitter,
ZO = 50 Ω, TA=25°C, VCE =8 V, I
C= 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .74 -38 28.1 25.46 157 -39.6 .011 68 .94 -12
0.5 .59 -127 22.0 12.63 107 -30.2 .031 47 .60 -29
1.0 .56 -168 16.8 6.92 84 -27.7 .041 46 .49 -29
1.5 .57 169 13.5 4.72 69 -26.2 .049 49 .45 -32
2.0 .62 152 11.1 3.61 56 -24.8 .058 43 .42 -39
2.5 .63 142 9.3 2.91 47 -23.4 .068 52 .40 -42
3.0 .64 130 7.6 2.41 37 -22.2 .078 52 .39 -50
3.5 .68 122 6.3 2.06 26 -20.6 .093 51 .37 -60
4.0 .71 113 5.1 1.80 16 -19.5 .106 48 .35 -70
4.5 .74 105 4.0 1.59 7 -18.0 .125 48 .35 -84
5.0 .77 99 3.1 1.42 -4 -17.2 .139 43 .35 -98
5.5 .79 93 2.0 1.27 -13 -16.3 .153 38 .35 -114
6.0 .81 87 1.1 1.13 -22 -15.4 .170 34 .35 -131
AT-41486 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA=25°C, VCE =8 V, I
C= 25 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .50 -75 32.0 40.01 142 -41.3 .009 54 .85 -17
0.5 .55 -158 23.2 14.38 97 -34.1 .020 48 .51 -24
1.0 .57 177 17.5 7.50 78 -29.9 .032 61 .46 -24
1.5 .57 161 14.1 5.07 65 -27.3 .043 62 .44 -28
2.0 .59 148 11.5 3.75 53 -24.8 .058 59 .43 -35
2.5 .61 139 9.6 3.02 45 -22.9 .072 58 .40 -41
3.0 .65 128 8.0 2.52 34 -21.6 .083 57 .38 -49
3.5 .70 121 6.7 2.17 24 -20.1 .099 56 .36 -59
4.0 .74 113 5.7 1.92 14 -18.8 .115 52 .34 -72
4.5 .78 107 4.7 1.72 3 -17.6 .132 47 .32 -87
5.0 .78 102 3.7 1.53 -8 -16.6 .149 42 .31 -106
5.5 .78 96 2.7 1.36 -19 -15.4 .169 36 .31 -125
6.0 .76 91 1.6 1.21 -29 -14.5 .188 31 .33 -144
A model for this device is available in the DEVICE MODELS section.
AT-41486 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq. NFOΓopt
GHz dB Mag Ang RN/50
0.1 1.3 .12 3 0.17
0.5 1.3 .10 16 0.17
1.0 1.4 .04 43 0.16
2.0 1.7 .12 -145 0.16
4.0 3.0 .44 -99 0.40
86 Plastic Package Dimensions
4
0.51 ± 0.13
(0.020 ± 0.005)
2.34 ± 0.38
(0.092 ± 0.015)
2.67 ± 0.38
(0.105 ± 0.15)
13
2
2.16 ± 0.13
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
0.30 MIN
(0.012 MIN)
C
L
45°
5° TYP.
8° MAX
0° MIN
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte.
in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
Obsoletes 5968-2031EN
5989-2648EN August 22, 2006
