DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product specification Supersedes data of 1996 Sep 10 1999 May 21 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes FEATURES BAS29; BAS31; BAS35 PINNING * Small plastic SMD package * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 90 V * Repetitive peak reverse voltage: max. 110 V DESCRIPTION PIN BAS29 BAS31 BAS35 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode common connection common anode * Repetitive peak forward current: max. 600 mA * Repetitive peak reverse current: max. 600 mA. handbook, halfpage 2 APPLICATIONS 1 * General purpose switching in e.g. surface mounted circuits. 2 1 3 DESCRIPTION 3 General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode. a. Simplified outline. 2 n.c. c. BAS31 diode. 1 3 b. BAS29 diode. 2 1 3 d. BAS35 diode. MAM233 MARKING TYPE NUMBER MARKING CODE BAS29 L20 BAS31 L21 BAS35 L22 1999 May 21 Fig.1 Simplified outline (SOT23) and symbols. 2 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage - 110 V VR continuous reverse voltage - 90 V IF continuous forward current single diode loaded; see Fig.2; note 1 - 250 mA double diode loaded; see Fig.2; note 1 - 150 mA - 600 mA t = 1 s - 10 A t = 100 s - 4 A t=1s - 0.75 A - 250 mW - 600 mA IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 Tamb = 25 C; note 1 Ptot total power dissipation IRRM repetitive peak reverse current ERRM repetitive peak reverse energy - 5 mJ Tstg storage temperature -65 +150 C Tj junction temperature - 150 C tp 50 s; f 20 Hz; Tj = 25 C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 21 3 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 10 mA - 750 mV IF = 50 mA - 840 mV IF = 100 mA - 900 mV IF = 200 mA - 1 V IF = 400 mA - 1.25 V VR = 90 V - 100 nA VR = 90 V; Tj = 150 C - 100 A see Fig.5 V(BR)R reverse avalanche breakdown voltage IR = 1 mA 120 170 V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 - 35 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.7 - 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 21 4 VALUE UNIT 360 K/W 500 K/W Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 GRAPHICAL DATA MBG440 300 MBH280 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 200 400 (1) 100 0 100 Tamb (oC) 0 200 0 1 2 VF (V) (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 (3) 200 (2) 0 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBH327 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 21 5 104 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 MBH282 102 handbook, halfpage MGD003 40 handbook, halfpage IR (A) Cd (pF) 10 30 (1) 1 (2) 20 10-1 10 10-2 100 0 Tj (oC) 0 200 0 (1) VR = 90 V; maximum values. (2) VR = 90 V; typical values. Fig.5 10 20 VR (V) 30 f = 1 MHz; Tj = 25 C. Reverse current as a function of junction temperature. Fig.6 handbook, full pagewidth tr Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. R = 50 S V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R = 50 i MGA881 (1) 90% VR input signal (1) IR = 3 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. 1999 May 21 t rr 6 output signal Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 May 21 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 21 8 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes NOTES 1999 May 21 9 BAS29; BAS31; BAS35 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes NOTES 1999 May 21 10 BAS29; BAS31; BAS35 Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes NOTES 1999 May 21 11 BAS29; BAS31; BAS35 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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