BAS29 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1996 Sep 10 1999 May 21

DISCRETE SEMICONDUCTORS

BAS29; BAS31; BAS35

General purpose controlled

avalanche (double) diodes

ook, halfpage

M3D088

1999 May 21 2

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

FEATURES

•Small plastic SMD package

•Switching speed: max. 50 ns

•General application

•Continuous reverse voltage:

max. 90 V

•Repetitive peak reverse voltage:

max. 110 V

•Repetitive peak forward current:

max. 600 mA

•Repetitive peak reverse current:

max. 600 mA.

APPLICATIONS

•General purpose switching in e.g.

surface mounted circuits.

DESCRIPTION

General purpose switching diodes

fabricated in planar technology, and

encapsulated in small rectangular

plastic SMD SOT23 packages.

The BAS29 consists of a single diode.

The BAS31 has two diodes in series.

The BAS35 has two diodes with a

common anode.

MARKING

TYPE NUMBER MARKING

CODE

BAS29 L20

BAS31 L21

BAS35 L22

PINNING

PIN DESCRIPTION

BAS29 BAS31 BAS35

1 anode anode cathode (k1)

2 not connected cathode cathode (k2)

3 cathode common connection common anode

Fig.1 Simplified outline (SOT23) and symbols.

handbook, halfpage

a. Simplified outline. c. BAS31 diode.

b. BAS29 diode. d. BAS35 diode.

MAM233

n.c.

1999 May 21 3

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

VRRM repetitive peak reverse voltage −110 V

VRcontinuous reverse voltage −90 V

IFcontinuous forward current single diode loaded; see Fig.2;

note 1 −250 mA

double diode loaded; see Fig.2;

note 1 −150 mA

IFRM repetitive peak forward current −600 mA

IFSM non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs−10 A

t = 100 µs−4A

t=1s −0.75 A

Ptot total power dissipation Tamb =25°C; note 1 −250 mW

IRRM repetitive peak reverse current −600 mA

ERRM repetitive peak reverse energy tp≥50 µs; f ≤20 Hz; Tj=25°C−5mJ

stg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

1999 May 21 4

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

VFforward voltage see Fig.3

IF=10mA −750 mV

IF=50mA −840 mV

IF= 100 mA −900 mV

IF= 200 mA −1V

= 400 mA −1.25 V

IRreverse current see Fig.5

VR=90V −100 nA

VR=90V; T

j= 150 °C−100 µA

V(BR)R reverse avalanche breakdown

voltage IR= 1 mA 120 170 V

Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 −35 pF

trr reverse recovery time when switched from IF= 30 mA to

IR= 30 mA; RL= 100 Ω;

measured at IR= 3 mA; see Fig.7

−50 ns

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 360 K/W

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

1999 May 21 5

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

GRAPHICAL DATA

Device mounted on an FR4 printed-circuit board.

(1) Single diode loaded.

(2) Double diode loaded.

Fig.2 Maximum permissible continuous forward

current as a function of ambient temperature.

handbook, halfpage

0 100

(1)

(2)

200

300

200

100

MBG440

Tamb (oC)

(mA)

Fig.3 Forward current as a function of

forward voltage.

handbook, halfpage

600

200

400

MBH280

(mA)

VF (V)

(1) (2) (3)

(1) Tj= 150 °C; typical values.

(2) Tj=25°C; typical values.

(3) Tj=25°C; maximum values.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents.

Tj=25°C prior to surge.

handbook, full pagewidth

MBH327

10 tp (µs)

IFSM

(A)

102

10−1104

102103

1999 May 21 6

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

Fig.5 Reverse current as a function of

junction temperature.

handbook, halfpage

200

MBH282

100 Tj (oC)

(µA)

10−2

10−1

102

(1) (2)

(1) VR= 90 V; maximum values.

(2) VR= 90 V; typical values.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj=25°C.

handbook, halfpage

0102030

(V)

(pF)

MGD003

Fig.7 Reverse recovery voltage test circuit and waveforms.

(1) IR= 3 mA.

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

1999 May 21 7

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

1999 May 21 8

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 May 21 9

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

NOTES

1999 May 21 10

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

NOTES

1999 May 21 11

Philips Semiconductors Product speciﬁcation

General purpose controlled avalanche

(double) diodes BAS29; BAS31; BAS35

NOTES

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Internet: http://www.semiconductors.philips.com

1999 64

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Printed in The Netherlands 115002/00/03/pp12 Date of release: 1999 May 21 Document order number: 9397 750 05967