2N2857UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: * Ultra-High frequency transistor * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 * JAN level (2N2857UBJ) * JANTX level (2N2857UBJX) * JANTXV level (2N2857UBJV) * JANS level (2N2857UBJS) * JANSR level (2N2857UBJSR) * JANSF level (2N2857UBJSF) * QCI to the applicable level Features * 100% die visual inspection per MIL-STD-750 method * * * * 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0011 Reference document: MIL-PRF-19500/343 Benefits * Qualification Levels: JAN, JANTX, JANTXV, JANSR and JANSF * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 15 Collector-Base Voltage VCBO 30 Unit Volts Volts Emitter-Base Voltage VEBO 3 Volts IC 40 mA 200 1.14 300 1.71 Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Operating Junction Temperature Storage Temperature Copyright 2010 Rev. F TJ -65 to +200 mW mW/C mW mW/C C TSTG -65 to +200 C PT PT SEMICOA Computers 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2857UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions IC = 3 mA Min Typ Max Units Volts 15 Collector-Base Cutoff Current ICBO1 VCB = 15 Volts 10 nA Collector-Base Cutoff Current ICBO3 VCB = 30 Volts 1 A Collector-Base Cutoff Current ICBO2 VCB = 15 Volts, TA = 150C 1 A Collector-Emitter Cutoff Current ICES VCE = 16 Volts 100 nA Emitter-Base Cutoff Current IEBO1 VEB = 3 Volts 10 A On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 Base-Emitter Saturation Voltage VBEsat Test Conditions IC = 3 mA, VCE = 1 Volts IC = 3 mA, VCE = 1 Volts TA = -55C IC = 10 mA, IB = 1 mA Collector-Emitter Saturation Voltage VCEsat IC = 10 mA, IB = 1 mA DC Current Gain Min 30 10 Typ Max 150 Units 1.0 Volts 0.4 Volts Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Collector to Base Feedback Capacitance Collector Base time constant Small Signal Power Gain Noise Figure Copyright 2010 Rev. F Symbol |hFE| hFE CCB rb'CC Gpe F Test Conditions VCE = 6 Volts, IC = 5 mA, f = 100 MHz VCE = 6 Volts, IC = 2 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCB = 6 Volts, IE = 2 mA, f = 31.9 MHz VCE = 6 Volts, IE = 1.5 mA, f = 450 MHz VCE = 6 Volts, IC = 1.5 mA, f < 450 MHz, Rg = 50 SEMICOA Corporation. Min Typ 10 21 50 220 1 pF 4 15 ps 12.5 21 MHz 4.5 dB 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2