Switching Diode Array Steering Diode
TVS Array™
WWW.Microsemi .COM
SCOTTSDALE DIVISION
MMAD1108 and MMAD1108e3
MMAD1108, e3
DESCRIPTION APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 16-PIN package
for use as steering diodes protecting up to eight I/O ports from ESD, EFT,
or surge by directing them either to the positive side of the power supply
line or to ground (see figure 1). An external TVS diode may be added
between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver
applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as
decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability.
This is a result of fewer pick and place operations, smaller footprint, smaller
weight, and elimination of various discrete packages that may not be as
user friendly in PC board mounting. They are available with either Tin-Lead
plating terminations or as RoHS Compliant with annealed matte-Tin finish
by adding an “e3” suffix to the part number.
Top Viewing Pin Layout
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Microsemi
Scottsdale Division Page 1
Copyright © 2005
6-28-2005 REV L
FEATURES APPLIC ATIONS / BENEFITS
• 8 Diode Array / protects 8 lines • Low capacitance steering di ode protection for high
frequency data lines
• Molded 16-Pin Dual-In-Line Package
• RS-232 & RS-422 Interface Net works
• UL 94V-0 Flammability Classification
• Ethernet: 10 Base T
• Low Capacitance 1.5 pF per diode
• Computer I / O Ports
• Switching speeds less than 5 ns
• LAN
• RoHS Compliant devices avai lable by adding “e3” suffix
• Switching Core Drivers
• IEC 61000-4 compatible
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20 µs
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0 flammability
classification
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Forward Surge Current: 2 Amps (8.3 ms) • TERMINALS: Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750 method 2026
12 Amps (8/20 µs)
• Continuous Forward Current: 400 mA (one diode)
• Power Dissipation (PD): 1500 mW (total) • MARKING: MSC logo, MMAD1108 or
MMAD1108e3 and date code. Pin #1 is to the left of
the dot or indent on top of package
• Solder Temperature: 260°C for 10 s (maximum)
• WEIGHT: 0.127 grams (approximate)
• Tape & Reel packaging: 2500 pcs (STANDARD)
• Carrier tube packaging: 48 pcs
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
REVERSE
RECOVERY
WORKING LEAKAGE CAPACITANCE FORWARD
FORWARD LEAKAGE
BREAKDOWN PEAK CURRENT VOLTAGE
VOLTAGE
CURRENT VOLTAGE TIME
REVERSE IC V
V
IVBR R R F F
t
VOLTAGE @ 0 V
@ IBR =100µA T = 25°C T = 150°C I = 10 mA I = 100 mA
V VRWM
V
A
µA
A
µA
pF
rr
ns
F
V
F
V
PART
NUMBER
MAX @V TYP MAX MAX MAX
MIN MAX MAX @VR R
MMAD1108 90 75 0.200 20 300 20 1.5 5.0 1.00 1.20
MMAD1108e3
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Switching Diode Array Steering Diode
TVS Array™
WWW.Microsemi .COM
SCOTTSDALE DIVISION
MMAD1108 and MMAD1108e3
MMAD1108, e3
SYMBOLS & DEFINITI ONS
Microsemi
Scottsdale Division Page 2
Copyright © 2005
6-28-2005 REV L
I/O Port
Su
pp
l
y
rail
(
+V
CC
)
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specifie d current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VRWM
VMaximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
FMaximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
IR
Capacitance: The capacitance of the T VS as defined @ 0 vo lts at a frequency of 1 MHz and stated in
picofarads.
C
OUTLINE AND CIRCUIT
GND (or -VCC)
STEERING DIODE APPLICATION
fi
g
ure 1
INCHES MILLIMETERS
MAX MIN MAX DIM MIN
A 0.358 0.398 9.09 10.10
B 0.150 0.158 3.81 4.01
C 0.053 0.069 1.34 1.75
D 0.011 0.021 0.28 0.53
F 0.016 0.050 0.41 1.27
G 0.050 BSC 01.27 BSC
J 0.006 0.010 0.15 0.25
K 0.004 0.008 0.10 0.20
L 0.189 0.206 4.80 5.23
P 0.228 0.244 5.79 6.19
OUTLINE
CIRCUIT CONFIGU R ATION
PAD LAYOUT
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
