BC449AG - ON Semiconductor

September, 2005 − Rev. 3 1Publication Order Number:

BC447/D

BC447, BC449, BC449A

High Voltage Transistors

NPN Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

BC447

BC449, BC449A

VCEO 80

100

Vdc

Collector-Base Voltage

BC447

BC449, BC449A

VCBO 80

100

Vdc

Emitter-Base Voltage VEBO 5.0 Vdc

Collector Current − Continuous IC300 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

Moisture Sensitivity Level (MSL)

Electrostatic Discharge (ESD) MSL: 1

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient RqJA 200 °C/W

Thermal Resistance,

Junction−to−Case RqJC 83.3 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

BC447 TO−92

http://onsemi.com

TO−92

CASE 29

STYLE 17

5000 Units / Box

BC449 TO−92 5000 Units / Box

COLLECTOR

BASE

EMITTER

BC449A TO−92 5000 Units / Box

MARKING DIAGRAM

44x

AYWW G

BC44x = Device Code

x = 7 or 9

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

BC447G TO−92

(Pb−Free) 5000 Units / Box

BC449G TO−92

(Pb−Free) 5000 Units / Box

BC449AG TO−92

(Pb−Free) 5000 Units / Box

BC447, BC449, BC449A

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0) BC447

BC449, BC449A

V(BR)CEO 80

100 −

−−

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) BC447

BC449, BC449A

V(BR)CBO 80

100 −

−−

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) BC447

(VCB = 80 Vdc, IE = 0) BC449, BC449A

ICBO −

−−

−100

100

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 2.0 mAdc, VCE = 5.0 Vdc) BC447, BC449

BC449A

(IC = 10 mAdc, VCE = 5.0 Vdc) BC447, BC449

BC449A

(IC = 100 mAdc, VCE = 5.0 Vdc) BC447, BC449

BC449A

hFE 50

120

100

−

460

220

−

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 0.125 0.25 Vdc

Base−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc) VBE(sat) − 0.85 − Vdc

Base−Emitter On Voltage

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

(IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1)

VBE(on) 0.55

−−

0.76 0.7

1.2

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT100 200 − MHz

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2%

BC447, BC449, BC449A

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Figure 1. Current−Gain — Bandwidth Product Figure 2. Capacitance

Figure 3. Switching Times

IC, COLLECTOR CURRENT (mA)

−100−10

200

100

VR, REVERSE VOLTAGE (VOLTS)

−1.0 −100−0.1 −2.0

fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

C, CAPACITANCE (pF)

−2.0 −3.0 −5.0 −7.0 −20 −30 −50 −70

300

−0.2 −0.5 −5.0 −10 −20 −50

TJ = 25°C

IC, COLLECTOR CURRENT (mA)

−10

500

200

100

−100

t, TIME (ns)

−50 −200

1.0 k

300

700

−70−20 −30

TJ = 25°C

VCE = −1.0 V

−5.0 V

−1.0

6.0

TJ = 25°C

4.0

2.0

Cibo

Cobo

VCC = −40 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

td @ VBE(off) = −0.5 V

8.0

Figure 4. Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

−10 −50−1.0

−500

−200

−100

−50

−20

−10

−20−2.0 −5.0

−1.0 k

IC, COLLECTOR CURRENT (mA)

MPS8598

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

MPS8599

−3.0 −7.0 −30 −100−70

−30

−70

−300

−700

DUTY CYCLE ≤ 10%

Figure 5. DC Current Gain Figure 6. “ON” Voltages

V, VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

, DC CURRENT GAINhFE

IC, COLLECTOR CURRENT (mA)

−2.0−0.2

300

200

100

−10

TJ = 125°C

−1.0 −5.0

VCE = −5.0 V

−20 −100−50 −200

25°C

−55°C

−0.5 10 2001.0

1.0

0.8

0.6

0.4

0.2

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

0.2 2.0 20 50

0.5 5.0

BC447, BC449, BC449A

http://onsemi.com

Figure 7. Collector Saturation Region Figure 8. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA)

RVB , TEMPERATURE COEFFICIENT (mV/ C)

q°

, COLLECTOR−EMITTER VOLTAGE (VOLTS)VCE

1000.2 101.0 2.0 5.0 20 50 200

0.1 100.05

2.0

1.6

1.2

0.8

0.4

1.0

TJ = 25°C

IC =

100 mA

IC =

50 mA

IC =

200 mA

IC =

20 mA

IC =

10 mA

202.0 5.00.2 0.5

−1.0

−1.4

−1.8

−2.2

−2.6

−3.0

RqVB FOR VBE

−55°C TO 125°C

0.5

0.02

Figure 9. Thermal Response

t, TIME (ms)

1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

0.03

0.02

0.1

0.07

0.05

0.01

0.3

0.2

1.0

0.7

0.5

r(t), NORMALIZED TRANSIENT

THERMAL RESISTANCE

ZqJC(t) = r(t) • RqJC

TJ(pk) − TC = P(pk) ZqJC(t)

ZqJA(t) = r(t) • RqJA

TJ(pk) − TA = P(pk) ZqJA(t)

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t1

(SEE AN469)

DUTY CYCLE, D = t1/t2

P(pk)

D = 0.5

0.2

0.1

0.02 0.01

SINGLE PULSE

0.05

BC447, BC449, BC449A

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PACKAGE DIMENSIONS

TO−92

(TO−226)

CASE 29−11

ISSUE AL NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

BC447/D

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