BC807 Semiconductor PNP Silicon Transistor Descriptions * High current application * Switching application Features * Suitable for AF-Driver stage and low power output stages * Complementary Pair with BC817 Ordering Information Type NO. Marking BC807 Package Code0 LA SOT-23 : hFE rank Outline Dimensions unit : mm 2.40.1 1.300.1 2.90.1 1.90 Typ. 1 3 0.4 Typ. 2 0.45~0.60 -0.03 +0.05 KST-2024-000 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. PIN Connections 1. Base 2. Emitter 3. Collector 1 BC807 (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -35 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 Base-Emitter turn on voltage VBE(ON) Collector-Emitter saturation voltage VCE(sat) - - V VCE=-1V, IC=-300mA - - -1.2 V IC=-500mA, IB=-50mA - - -700 mV - - -100 nA ICBO VCB=-25V, IE=0 DC current gain hFE* VCE=-1V, IC=-100mA Collector output capacitance fT Cob Unit -35 Collector cut-off current Transition frequency Min. Typ. Max. 100 - 630 - VCB=-5V, IE=10mA f=100MHz - 100 - MHz VCB=-10V, IE=0, f=1MHz - 16 - pF * : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630 KST-2024-000 2 BC807 Electrical Characteristic Curves Fig. 1 Pc-Ta Fig. 3 IC - VCE Fig. 2 IC -VBE Fig. 4 hFE - IC Fig. 5 VCE(sat) - IC KST-2024-000 3