A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 10 mA 22 V
BVCES IC = 10 mA 50 V
BVCBO IC = 1.0 mA 45 V
BVEBO IE = 250 µA 3.5 V
ICBO VCB = 28 V 250 µ
µµ
µA
hFE VCE = 5.0 V IC = 100 mA 20 120 ---
ft VCE = 20 V IE = 120 mA 4.0 4.5 GHz
Cob VCB = 28 V f = 1.0 MHz 3.5 pF
GPE
LG VCE = 20 V ICQ = 120 mA Pout = 0.5 W
f = 2.0 GHz 10
-0.2/+1.0 dB
NPN SILICON RF POWER TRANSISTOR
MRW54001
PACKAGE STYLE .200 4L PILL
1 = Collector 3 = Base 2 & 4 = Emitter
UNIT b B1 c D D1 D
2 H
mm 1.63
1.38 0.81
0.71 0.16
0.10 3.38
3.08 5.28
5.12 5.23
5.13 19
17
inches 0.065
0.055 0.032
0.028 0.006
0.004 0.133
0.121 0.208
0.202 0.206
0.202 0.75
0.67
DESCRIPTION:
The ASI MRW54001 is Designed for
Classs "A" and "AB" Amplifier
Applications Up to 2.0 GHz.
FEATURES:
• Omnigold™ Metalization System
• Implanted ballast resistors
• Common-Emitter
MAXIMUM RATINGS
I 160 mA
VCEO 22 V
VCES 50 V
TJ -65 °C to +200 °C
TSTG - 65 °C to +200 °C
θ
θθ
θJC 40 °C/W
