BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation - Verlustleistung 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 337 BC 338 Collector-Emitter-voltage B open VCE0 45 V 25 V Collector-Base-voltage E open VCB0 50 V 30 V Emitter-Base-voltage C open VEB0 5V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (DC) IC 800 mA Junction temp. - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 55...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 1 V, IC = 100 mA Group -16 hFE 100 160 250 Group -25 hFE 160 250 400 Group -40 hFE 250 400 630 Collector-Emitter cutoff current - Kollektorreststrom 1 VCE = 40 V BC 337 ICES - - 200 nA VCE = 20 V BC 338 ICES - - 200 nA VCE = 40 V, Tj = 125/C BC 337 ICES - - 10 :A VCE = 20 V, Tj = 125/C BC 338 ICES - - 10 :A ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 4 01.11.2003 General Purpose Transistors BC 337 / BC 338 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung IC = 10 mA IC = 0.1 mA BC 337 V(BR)CES 40 V - - BC 338 V(BR)CES 20 V - - BC 337 V(BR)CES 50 V - - BC 338 V(BR)CES 30 V - - V(BR)EB0 5V - - VCEsat - - 0.7 V VBE - - 1.2 V fT - 100 MHz - CCB0 - 12 pF - Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung IE = 10 :A Collector saturation volt. - Kollektor-Sattigungsspannung IC = 500 mA, IB = 50 mA Base-Emitter voltage - Basis-Emitter-Spannung VCE = 1 V, IC = 300 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Cap. - Kollektor-Basis-Kap. VCB = 10 V, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ 200 K/W 1) RthA BC 327 / BC 328 BC 337-16 BC 338-16 BC 337-25 BC 338-25 BC337-40 BC338-40 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 01.11.2003 5