1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
401.11.2003
BC 337 / BC 338 General Purpose Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC 337 BC 338
Collector-Emitter-voltage B open VCE0 45 V 25 V
Collector-Base-voltage E open VCB0 50 V 30 V
Emitter-Base-voltage C open VEB0 5 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (DC) IC800 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 55…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 1 V, IC = 100 mA
Group -16 hFE 100 160 250
Group -25 hFE 160 250 400
Group -40 hFE 250 400 630
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 40 V BC 337 ICES – – 200 nA
VCE = 20 V BC 338 ICES – – 200 nA
VCE = 40 V, Tj = 125/C BC 337 ICES – – 10 :A
VCE = 20 V, Tj = 125/C BC 338 ICES – – 10 :A
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
5
01.11.2003
General Purpose Transistors BC 337 / BC 338
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
IC = 10 mA BC 337 V(BR)CES 40 V – –
BC 338 V(BR)CES 20 V – –
IC = 0.1 mA BC 337 V(BR)CES 50 V – –
BC 338 V(BR)CES 30 V – –
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
IE = 10 :AV
(BR)EB0 5 V – –
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 500 mA, IB = 50 mA VCEsat – – 0.7 V
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 1 V, IC = 300 mA VBE – – 1.2 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz fT– 100 MHz –
Collector-Base Cap. – Kollektor-Basis-Kap.
VCB = 10 V, f = 1 MHz CCB0 – 12 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BC 327 / BC 328
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 337-16
BC 338-16
BC 337-25
BC 338-25
BC337-40
BC338-40
