DATA SH EET
Product specification September 1992
DISCRETE SEMICONDUCTORS
BLF242
HF/VHF power MOS transistor
September 1992 2
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
FEATURES
•High power gain
•Low noise
•Easy power control
•Good thermal stability
•Withstands full load mismatch
•Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
h
alfpage
1
23
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 175 28 5 >13
typ. 16 >50
typ. 60
September 1992 3
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −65 V
±VGS gate-source voltage −20 V
IDDC drain current −1A
P
tot total power dissipation up to Tmb = 25 °C−16 W
Tstg storage temperature −65 150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-mb thermal resistance from
junction to mounting base Tmb =25°C; Ptot = 16 W 11 K/W
Rth mb-h thermal resistance from
mounting base to heatsink Tmb =25°C; Ptot = 16 W 0.3 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb =25°C.
handbook, halfpage
MRA918
10−2
10−1
10
1
1
10
ID
(A)
VDS (V) 102
(1) (2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0 50 100 150
20
10
0
MPG141
(2)
(1)
Ptot
(W)
Th (°C)
September 1992 4
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 0.1 mA 65 −− V
I
DSS drain-source leakage current VGS = 0; VDS = 28 V −−10 µA
IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
V
GS(th) gate-source threshold voltage ID = 3 mA; VDS = 10 V 2 −4.5 V
gfs forward transconductance ID = 0.3 A; VDS = 10 V 0.16 0.24 −S
RDS(on) drain-source on-state resistance ID = 0.3 A; VGS = 1 V −3.3 5 Ω
IDSX on-state drain current VGS = 10 V; VGS = 10 V −1.2 −A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −13 −pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −9.4 −pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −1.7 −pF
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS =10V.
handbook, halfpage
0 100 200 300
4
2
–2
–4
0
MBB777
ID (mA)
T.C.
(mV/K)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
VDS = 10 V; Tj=25°C.
handbook, halfpage
0
1.5
1
0.5
051015
MGP142
VGS (V)
ID
(A)
September 1992 5
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
ID= 0.3 A; VGS =10V.
handbook, halfpage
0
6
4
2
050 100 150
MBB778
Tj (oC)
RDS (on)
(Ω)
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
30
20
10
010 20 30
MBB776
VDS (V)
C
(pF)
Cis
Cos
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
6
4
2
010 20 30
MBB775
VDS (V)
Crs
(pF)
September 1992 6
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) GP
(dB) ηD
(%) RGS
(Ω)
CW, class-B 175 28 10 5 > 13
typ. 16 > 50
typ. 60 47
Ruggedness in class-B operation
The BLF242 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
VDS = 28 V; f =175 MHz at rated output power.
Noise figure (see Fig.11)
VDS = 28 V; ID= 0.2 A; f = 175 MHz;
RGS =47Ω; Th=25°C. Input and
output power matched for PL=5W;
F = typ. 5.5 dB.
Fig.9 Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ =10mA;
R
GS =47Ω; f = 175 MHz.
handbook, halfpage
0510
20
0
10
100
0
50
MGP143
ηd
ηd
(%)
Gp
PL (W)
Gp
(dB)
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ =10mA;
R
GS =47Ω; f = 175 MHz.
handbook, halfpage
0 0.5 1
10
0
5
MGP144
PL
(W)
PIN (W)
September 1992 7
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
List of components (class-B test circuit)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr= 4.5),
thickness 1⁄16 inch.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C7 film dielectric trimmer 4 to 40 pF 2222 809 08002
C3 multilayer ceramic chip capacitor
(note 1) 100 pF
C4, C8 ceramic chip capacitor 100 nF 2222 852 47104
C6 film dielectric trimmer 5 to 60 pF 2222 809 08003
C9 electrolytic capacitor 2.2 µF, 40 V
L1 5 turns enamelled 0.7 mm copper wire 53 nH length 5.4 mm
int. dia. 3 mm
leads 2 ×5mm
L2, L3 stripline (note 2) 30 Ω10 ×6mm
L4 11 turns enamelled 1 mm copper wire 500 nH length 15.5 mm
int. dia. 8 mm
leads 2 ×5mm
L5 5 turns enamelled 1 mm copper wire 79 nH length 9.1 mm
int. dia. 5 mm
leads 2 ×5mm
L6 grade 3B Ferroxcube RF choke 4312 020 36640
R1 0.5 W metal film resistor 47 Ω
R2 0.5 W metal film resistor 10 Ω
Fig.11 Test circuit for class-B operation.
f = 175 MHz.
handbook, full pagewidth
MGP145
input
50 Ω
C1
C3
C3
L6
R2
L1 L2 D.U.T. L3 L5
+VG
L4
R1
C2 C7
C8 C9
+VD
C6
C5
output
50 Ω
September 1992 8
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
Fig.12 Component layout for 175 MHz class-B test circuit.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by fixing screws, copper straps and hollow rivets at the
edges of the board and under the source.
Dimensions in mm.
handbook, full pagewidth
MGP146
150
70
strap strap
rivet
C1 L1 R1
L2 L3
L4
L5
L6
R2
C2
C3
C4
C5
C8
C6 C7
C9
+VG
+VD
September 1992 9
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
Fig.13 Input impedance as a function of frequency
(series components), typical values.
Class-B operation; VDS = 28 V; PL=30W;
R
GS =47Ω;T
h=25°C.
handbook, halfpage
0
50
10
30
−10
−30 200
MGP150
100
ri
xi
Zi
(Ω)
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values.
Class-B operation; VDS = 28 V; PL=30W;
R
GS =47Ω;T
h=25°C.
handbook, halfpage
0 200
100
0
MGP149
50
100
ZL
(Ω)
f (MHz)
RL
XL
Fig.15 Power gain as a function of frequency,
typical values.
Class-B operation; VDS = 28 V; PL=30W;
R
GS =47Ω;T
h=25°C.
handbook, halfpage
0 200
20
0
MGP148
10
100
Gp
(dB)
f (MHz)
September 1992 10
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT123A 97-06-28
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
1
2
43
U
3
U
2
H
HL
b
Q
D
U
1
q
A
F
c
p
M
w
2
B
C
C
A
w
1
M
AB
α
UNIT A
mm
Db
5.82
5.56 0.18
0.10 9.73
9.47 9.63
9.42 20.71
19.93 3.33
3.04 6.61
6.09
7.47
6.37
cD1U2U3
9.78
9.39 1.020.51
w2
w1
45°
αL
5.61
5.16
U1
25.15
24.38
Q
4.63
4.11
q
18.42
F
2.72
2.31
inches 0.229
0.219 0.007
0.004 0.383
0.373 0.397
0.371 0.815
0.785 0.131
0.120 0.26
0.24
0.294
0.251 0.385
0.370 0.040.02
0.221
0.203 0.99
0.96
0.182
0.162 0.725
0.107
0.091
pH
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
September 1992 11
Philips Semiconductors Product specification
HF/VHF power MOS transistor BLF242
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
