ZXMN6A11G
Issue 4 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V(BR)DSS 60 V ID= 250A, VGS=0V
Zero gate voltage drain current IDSS 1.0 AV
DS= 60V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th) 1.0 V ID= 250A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
RDS(on) 0.120 ⍀VGS= 10V, ID= 2.5A
0.180 ⍀VGS= 4.5V, ID = 2A
Forward transconductance(*)(‡) gfs 4.9 S VDS= 15V, ID= 2.5A
Dynamic(‡)
Input capacitance Ciss 330 pF VDS= 40V, VGS=0V
f=1MHz
Output capacitance Coss 35.2 pF
Reverse transfer capacitance Crss 17.1 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time td(on) 1.95 ns VDD= 30V, ID= 2.5A
RG≅6.0⍀, VGS= 10V
Rise time tr 3.5 ns
Turn-off delay time td(off) 8.2 ns
Fall time tf4.6 ns
Gate charge Qg3.0 nC VDS= 15V, VGS= 5V
ID= 2.5A
Total gate charge Qg5.7 nC VDS= 15V, VGS= 10V
ID= 2.5A
Gate-source charge Qgs 1.25 nC
Gate drain charge Qgd 0.86 nC
Source-drain diode
Diode forward voltage(*) VSD 0.85 0.95 V Tj=25°C, IS= 2.8A,
VGS=0V
Reverse recovery time(‡) trr 21.5 ns Tj=25°C, IS= 2.5A,
di/dt=100A/s
Reverse recovery charge(‡) Qrr 20.5 nC