EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER : DPT-026-109 REV : 1.0
ECN : PAGE : 3/7
3mm Pho totransistor
MODEL NO : PT264-6B
█Absolute Maximum Ratings at TA = 25 ℃
℃℃
℃
Parameter Symbol Rating Unit Notice
Collector-Emitter Voltage VCEO 30 V
Emitter-Colle ctor- Voltage VECO 5V
Collector Current IC20 mA
Operating Temperature Topr -25 ~ +85 ℃
Storage Temperature Tstg -40 ~ +85 ℃
Soldering Temperatur e Tsol 260 ℃4mm from mold body
less than 5 seconds
Power Dissipation at(or below)
25℃Free Air Tempera ture Pc 75 mW
█Electronic Optical Characteristics :
Parameter Symbol Min. Typ. Max. Unit Condition
Collector-Emitter
Breakdown Voltage BVCEO 30 ---- ---- V IC=100μA
Ee=0mW/cm2
Emitter-Collector
Breakdown Voltage BVECO 5 ---- ---- V IE=100μA
Ee=0mW/cm2
Collector-Emitter
Saturation Voltage VCE(sat) ---- ---- 0.4 V IC=2mA
Ee=1mW/cm2
Rise Time tr---- 15 ----
Fall Time tf---- 15 ---- μSVCE=5V
IC=1mA
RL=1000Ω
Collector Dark
Current ICEO ---- ---- 100 nA VCE=20V
Ee=0mW/cm2
On State Collector
Current IC(on) 0.7 1.0 ---- mA VCE=5V
Ee=1mW/cm2
Wavelength of
Peak Sensitivity λp---- 980 ---- nm ----
Rang of Spectral
Bandwidth λ0.5 ---- 840---1200 ---- nm ----