Preliminary Datasheet BCR10CS-12LB R07DS0224EJ0400 (Previous: REJ03G0469-0300) Rev.4.00 Dec 14, 2010 Triac Medium Power Use Features IT (RMS) : 10 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 The product guaranteed maximum junction temperature of 150C Non-Insulated Type Planar Passivation Type Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) RENESAS Package code:: P PRSS0004AB-A (Package name: TO-220S 220S) 4 1 2 4 L O E 1 3 2 G K P 2, 4 3 1. 2. 3. 4. 1 T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter Voltage class 12 600 720 Symbol VDRM VDSM Unit V V Symbol Ratings Unit RMS on-state current IT (RMS) 10 A Commercial frequency, sine full wave Note3 360 conduction, Tc = 128C Surge on-state current ITSM 100 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg -- 5 0.5 10 2 - 40 to +150 - 40 to +150 1.3 W W V A C C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. R07DS0224EJ0400 Rev.4.00 Dec 14, 2010 Page 1 of 8 BCR10CS-12LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. -- -- Typ. -- -- Max. 2.0 1.5 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 15 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 30Note6 30Note6 30Note6 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2/0.1 -- -- -- -- 1.8 V C/W Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10/1 -- -- V/s Tj = 125C/150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = - 5.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS0224EJ0400 Rev.4.00 Dec 14, 2010 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 8 BCR10CS-12LB Preliminary Performance Curves 100 7 5 90 3 2 Surge On-State Current (A) 102 Tj = 150C 101 7 5 3 2 Tj = 25C 100 0.5 Gate Voltage (V) 5 3 2 101 7 5 3 2 1.0 1.5 2.0 2.5 3.0 3.5 80 70 60 50 40 30 20 10 0 100 4.0 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PGM = 5W VGT = 1.5V PG(AV) = 0.5W IGM = 2A 100 7 5 3 2 IRGT I IFGT I, IRGT III 10-1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) 7 5 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Rated Surge On-State Current 103 Typical Example 7 5 3 IRGT I, IRGT III 2 102 7 5 IFGT I 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) R07DS0224EJ0400 Rev.4.00 Dec 14, 2010 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 8 BCR10CS-12LB Preliminary Allowable Case Temperature vs. RMS On-State Current 160 28 140 24 360 Conduction Resistive, 20 inductive loads 16 12 8 4 0 2 4 6 8 10 12 14 16 120 Curves apply regardless of 100 conduction angle 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 160 140 140 120 x 120 x t2.3 120 100 x 100 x t2.3 100 60 x 60 x t2.3 80 All fins are black 60 painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 2 6 4 8 10 12 14 120 100 80 60 40 20 0 16 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 7 5 3 2 16 RMS On-State Current (A) Ambient Temperature (C) Ambient Temperature (C) 0 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Case Temperature (C) 32 Typical Example 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) R07DS0224EJ0400 Rev.4.00 Dec 14, 2010 Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Page 4 of 8 BCR10CS-12LB Preliminary Breakover Voltage vs. Junction Temperature Distribution 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2-, G- 0 40 80 120 160 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Junction Temperature (C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) 160 Typical Example Tj = 125C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) 100 -40 Critical Rate of Rise of Off-State Commutating Voltage (V/s) T2+, G- Typical Example Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 103 7 5 3 2 160 Typical Example Tj = 150C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/s) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics (Tj=125C) Commutation Characteristics (Tj=150C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 101 7 5 Minimum Characteristics Value Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant 3 2 100 7 0 10 III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) R07DS0224EJ0400 Rev.4.00 Dec 14, 2010 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Latching Current (mA) Latching Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 101 7 5 Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant 3 2 III Quadrant Minimum Characteristics 100 Value 7 0 10 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 8 BCR10CS-12LB Preliminary Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 Recommended Circuit Values Around The Triac Load C1 A 6V V R1 A 6V 330 V 330 Test Procedure II Test Procedure I C0 R0 C1 = 0.1 to 0.47F C0 = 0.1F R1 = 47 to 100 R0 = 100 6 A 6V V 330 Test Procedure III R07DS0224EJ0400 Rev.4.00 Dec 14, 2010 Page 6 of 8 BCR10CS-12LB Preliminary Package Dimensions JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm (1.4) 4.44 0.2 7.8 6.6 (1.5) 2.49 0.2 0.2 0.1 +- 0.1 7.8 7.0 + 0.3 - 0.5 1.3 0.15 10.0 (1.5) 8.6 0.3 10.2 0.3 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 0.2 Package Name TO-220S JEITA Package Code SC-83 2.54 0.5 Previous Code TO-220S RENESAS Code PRSS0004AB-A 3.0 -0.5 +0.3 1.5Max 1.5Max 1 10.5Max L O E MASS[Typ.] 1.2g 1 Unit: mm G K P 4.5 1.3 0 +0.3 -0 (1.5) 2.54 0.5 0.4 0.1 8.6 0.3 9.8 0.5 0.2 0.86 +- 0.1 0.3 3.0 +- 0.5 1.3 0.2 5 0.5 2.6 0.4 4.5 0.8 R07DS0224EJ0400 Rev.4.00 Dec 14, 2010 Page 7 of 8 BCR10CS-12LB Preliminary Ordering Information Orderable Part Number BCR10CS-12LB#B00 BCR10CS-12LB-T11#B00 R07DS0224EJ0400 Rev.4.00 Dec 14, 2010 Packing Tube Embossed Tape Quantity 50 pcs. 1000 pcs. 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