MPS6517 MPS6518 MPS6519 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in TO-92 packages. The complementary types are MPS6513 to MPS6515. QUICK REFERENCE DATA MPS6517 | 6518 | 6519 Collector-emitter voltage VCEO max. 40 40 25 Vv Collector current (d.c.) l max. 100 100 | 100 mA D.C. current gain Ic = 100 mA; VcE = 10 V hFE > 60 90 | 150 Total power dissipation TTT TTT up to Tamb = 25 OC Prot max. 625 mw MECHANICAL DATA Dimensions in mm Fig. 1 TO-92. Pinning; c 1 = collector > 2 = base LI a 0 40 3 = emitter woes =e 4 min ~e 5.2 max 12.7 min ---------- -- pp + 048 4 0.40 ' _ LL. 2.0 max " MBCO14- 1 Note (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. September 1994 829 MPS6517 MPS6518 MPS6519 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) MPS6517 | 6518 | 6519 Collector-emitter voltage ~VCEO max. 40 40 25 V Collector-base voitage -VCBO max. 40 40 25 V Emitter-base voltage VEBO max. 4,0 Vv Collector current (d.c.) Ic max. 100 mA Total power dissipation up to Tamb = 25 OC Prot max. 625 mw Storage temperature range Tstg 65 to +150 OC Junction temperature Tj max. 150 oc THERMAL RESISTANCE From junction to ambient in free air Rth j-a = 200 K/W CHARACTERISTICS Tj = 25 OC unless otherwise specified MPS6517 | 6518 | 6519 Collector-emitter breakdown voltage Ic = 0,5 mA; Ip =0 V(BR}CEO > 40 40 25 V Emitter-base breakdown voltage le= 10 pA; Ic =0 V(BRJEBO > 4,0 40 40 V Collector cut-off current Vcp = 30V; le =0 ICcBO < 50 50 nA -Vcp = 20 V; le =0 ~ICBO < - - 50 nA D.C. current gain hee _ 20 "0 on le = 2mA;VceE = 10V 180 | 300 | 500 Ic = 100 mA; -VcE = 10 V hFE > 60 90 | 150 Collector-emitter saturation voltage ns Ic = 50 mA; -ip =5mA VCcEsat << 0,5 v Output capacitance Vcp = 10 V; IE = 0; f = 100 kHz Ce < 3,5 pF 830 September 1994