03 De Bjosase43 oogosa3 2 Te 0585443 ALPHA IND/ SEMICONDUCTOR O3E 00503 a p 7707-/9 High-Q GaAs 45 Volt Series Tuning Diodes Features 100% Higher Q Than Comparable Silicon Diodes Wide Tuning Ratio High Reliability and Space Qualified 5 3 , ay, = aes -%e ek 3 Bee MN 7 * . * a aa yA, Fae ; s ~ a we . 7 Yy Be x Sa Type * DVE6950 Series All packaged Alpha gallium arsenide tuning varac- tors are electrically burned-in prior to final measure- ment. A special variation of this diode family is the only space-qualified, high-reliability varactor available today and is used in the ESRO European satellite program. Description The Alpha line of gallium arsenide tuning diodes offers the circuit designer expanded capability. The extremely high-Q and superior tuning ratio of these diodes allow tunable oscillators and filters to be built with lower loss and broader bandwidth. The diodes are par- ticularly useful for tuning Gunn and Impatt oscillators. The diode Qis measured in a well characterized high- Q cavity with an unloaded cavity Q of 1500 in the 1 to 2 GHz range. A block diagram of the test set-up is shown in Figure 1. The test cavity is shown in Figure 2. Aplot of Q_, at 1.0 GHz versus Cy_, in Figure 3 com- pares the Alpha gallium arsenide diodes with available silicon diodes. Electrical Characteristics Min (V,"" = 45 Volts) Environmental Capability Thermal Shock Centrifuge Gross Leak Test Fine Leak Test High Temperature Storage High Temperature Power Burn-in Reverse Leakage Current 195.8C to + 100C 20,000G 10-atm -- cc/sec 10-atm cc/sec 200C 100C, 1.50 mA, 16 hrs. 50nA Model Number Cio Cy q_, Q_, Suffix (pF) Cre | @50MHz | @1GHz Letter 0.4-0.6 2.0 10,000 500 A 0.6-0.8 2.3 9,000 450 B 0.8-1.0 2.7 8,000 400 Cc 1.0-1.5 3.0 7,000 350 D 1.5-2.0 3.5 6,000 300 E 2.0-2.5 3.9 5,500 275 F 2.5-3.0 4.25 5,000 250 G 3.0-4.0 4.30 4,500 225 H 4.0-5.0 4.35 4,300 215 J 5.0-6.0 4.40 4,000 200 K Notes: Alpha Model Number Package Style DVE6951 DVE6952 DVE6953 DVE6954 DVE6955 DVE6956 023-001 168-001 320-001 350-001 290-001 Various") Note: Add suffix letter to Alpha Model Number to specify desired Electrical Characterisitics 1. Voltage breakdown is specified at 10uA. Higher voltage breakdowns are available on request. 2. A 10% capacitance tolerance is standard. Specify goal capacitance when ordering, Tighter tolerances are available on request. 3. _Cro_ is the minimum total capacitance ratio which includes the package capacitance that is normally 0.2 pF. The ratio for diode model DVE4554 may be some- Cie what lower than specified due to the higher stray capacitance of the 092 package. A typical capacitance versus voltage plot appears in Figure 4. 4. Extrapolated down to 50 MHz. 5. Model DVE6956 is used when ordering diodes in a package style not listed in the table. Using the Alpha diode catalog as a reference, you can order these diodes in the 048-001, 067-001, 084-001, 093-001, 082-001, 092-001, 135-001, 158-001, 168-001, 237-001, 247-001, 304-001 and 305-001 package styles. See ORDERING INFORMATION. _ 0585443 ALPHA IND/ SEMICONDUCTOR O3 DE @ 0585443 go00504 4 High-Q GaAs 45 Volt Series Tuning Diodes O03 00504 BD T+O7-19 SWEEP GENERATOR |_| DIRECTIONAL CAVITY AND DUT |_| AMPLIFIER -26dB |_| | 1-2 GHz J coupceR [1 288 PAD 7 aera #13128 1-2 GHz DETECTOR OSCILLOSCOPE 1 POWER SUPPLY FOR BIAS Figure 1. Quality Factory Q Test Set-Up Ae Yi, Yj ty Z 4 | f d OUTPUT F yy 4 iz APL, Sy LLL, Figure 2. Test Cavity 3-84 O3 DE Pposasuya 000505 b i 0585443 ALPHA IND/ SEMICONDUCTOR T-O7-/9 High-Q GaAs 45 Volt Series Tuning Diodes O3E 00505 D rT | | rT." 600 12,000 550}- 4 11,000 500 10,000 450} {9,000 400 8,000 ~- @ 350- G24 GALLIUM ARSENIDE 17,000 7 is Q4 @ 50 MHz e 00 Pe 6.000 250} | ~@}_ 45.000 200 4,000 x SILICON 150} \y {3,000 100 ~A land oL_l | | | | | | 3 4 6S 6 7 8 & 10 11 #42 13 414 15 16 1.7 18 Chg Figure 3. Q_,vs. Cr_, 10.0 - | 1 oT PETTITT en ee | r Td ttt i. o=12 a ~ ew re ~ ~ e ~ = 10 o _ eA 4 ~ Cy (TOTAL) 7 ~ ~ ~ Sac) UUNT HON) - _ ~ _ ~ z CVE 7900(chip} _J a 4 fot pty ee po a i 10 100 v+ (Vv) Figure 4. Typical Capacitance vs. Voltage 3-85