SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications AEC-Q101 qualified (Note 1) Compact package suitable for high-density mounting * Low ON-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) 1.20.05 0.320.05 * * 0.220.05 Unit: mm 0.80.05 0.4 0.80.05 Note 1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Gate-source voltage Drain current 2 Symbol Rating Unit VDSS 30 V V VGSS 20 DC ID 100 Pulse IDP 200 Drain power dissipation (Ta = 25C) PD (Note 1) mA 150 mW Channel temperature Tch 150 C Storage temperature Tstg -55 to 150 C 0.130.05 Drain-source voltage 3 0.50.05 Characteristics 1 0.4 1.20.05 : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) VESM 1. Gate 2. Source 3. Drain JEDEC JEITA Using continuously under heavy loads (e.g. the application of TOSHIBA 2-1L1B high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.5 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm) Note: 0.5mm 0.45mm Marking 0.45mm Equivalent Circuit 3 0.4mm 3 NT 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2009-12 1 2018-05-17 SSM3K44MFV Electrical Characteristics (Ta = 25C) Characteristics Symbol Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Test Condition Min Typ. Max Unit IGSS VGS = 14 V, VDS = 0 V 1 A V (BR) DSS ID = 0.1 mA, VGS = 0 V 30 V IDSS VDS = 30 V, VGS = 0 V 1 A Vth VDS = 3 V, ID = 0.1 mA 0.8 1.5 V Forward transfer admittance Yfs VDS = 3 V, ID = 10 mA 25 mS Drain-Source on-resistance RDS (ON) ID = 10 mA, VGS = 4 V 2.2 4.0 ID = 10 mA, VGS = 2.5 V 4.0 7.0 8.5 5.3 9.4 50 200 Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Turn-on time ton Turn-off time toff VDS = 3 V, VGS = 0 V, f = 1 MHz VDD = 5 V, ID = 10 mA, VGS = 0 to 5 V pF ns Switching Time Test Circuit (a) Test circuit 5V (b) VIN Output 5V RL 0V 90% Input 50 0 10 s VDD (c) VOUT VDD = 5 V Duty 1% Input: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration when using the device. 2 2018-05-17 SSM3K44MFV ID - VDS ID - VGS 250 1000 Common Source VDS = 3 V 100 2.7 ID 150 Drain current ID Drain current Common Source Ta = 25C 3 (mA) 4 (mA) 200 10 2.5 100 2.3 50 Ta = 100C 10 -25C 25C 1 0.1 VGS = 2.1 V 0 0 0.5 1 1.5 0.01 0 2 1 Drain-Source voltage VDS (V) 2 3 Gate-Source voltage RDS (ON) - ID VGS (V) RDS (ON) - VGS 10 6 Common Source Common Source ID = 10 mA 5 8 Drain-Source ON-resistance RDS (ON) () Drain-Source ON-resistance RDS (ON) () Ta = 25C 6 VGS = 2.5 V 4 4V 2 4 Ta =100C 3 25C 2 -25C 1 0 0 40 80 120 Drain current ID 160 0 0 200 2 (mA) 4 1.8 6 5 VGS = 2.5 V 4 3 4V 2 1 0 -25 8 VGS 10 (V) Vth - Ta 2 Common Source ID = 10 mA Gate threshold voltage Vth (V) Drain-Source ON-resistance RDS (ON) () 7 6 Gate-source voltage RDS (ON) - Ta 8 4 1.6 Common Source ID = 0.1 mA VDS = 3 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 0 -25 150 Ambient temperature Ta (C) 0 25 50 75 100 125 150 Ambient temperature Ta (C) 3 2018-05-17 SSM3K44MFV Yfs - ID IDR - VDS 250 Common Source 500 VDS = 3 V 300 Ta = 25C Drain reveres current IDR (mA) Forward transfer admittance Yfs (mS) 1000 100 50 30 10 5 3 1 1 10 100 Drain current ID 200 150 Common Source VGS = 0 V Ta = 25C D S 100 50 0 0 1000 IDR G -0.2 (mA) -0.4 -0.6 t (ns) 3000 tf Switching time t (ns) Switching time toff 300 100 30 10 0.1 ton toff 1000 500 tf 300 ton 100 50 tr 30 tr 1 10 Drain current ID 10 0.1 100 1 (mA) 10 Drain current C - VDS (mA) (mW) Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6mm, Cu Pad: 0.585 mm2 ) 200 PD 30 10 Drain power dissipation (pF) 250 Common Source VGS = 0 V f = 1 MHz Ta = 25C 50 Capacitance C ID 100 PD - Ta 100 Ciss Coss 5 3 Crss 1 0.5 0.3 0.1 0.1 -1.4 Common Source VDD = 3 V VGS = 0 to 2.5 V Ta = 25C 5000 500 50 -1.2 t - ID 10000 Common Source VDD = 5 V VGS = 0 to 5 V Ta = 25C 5000 1000 -1 Drain-Source voltage VDS (V) t - ID 10000 3000 -0.8 1 10 150 100 50 0 0 100 Drain-Source voltage VDS (V) 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 4 2018-05-17 SSM3K44MFV RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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