Wideband Amplifier
10 MHz - 40 GHz
Rev. V2
MAAM-011109
1
1
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For further information and support please visit:
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1
* Restrictions on Hazardous Substances, European Union
Directive 2011/65/EU.
Ordering Information1,2
Part Number Package
MAAM-011109 bulk quantity
MAAM-011109-TR1000 1000 piece reel
MAAM-011109-001SMB Sample board
1. Reference Application Note M513 for reel size information.
2. All sample boards include 3 loose parts.
Features
13 dB Gain
50 Ω Input / Output Match
+18 dBm Output Power
+5 V DC, 190 mA
Lead-Free 5 mm 9-lead LGA Package
RoHS* Compliant and 260°C Reflow Compatible
Description
The MAAM-011109 is an easy-to-use, wideband
amplifier that operates from 10 MHz - 40 GHz. The
device features 13 dB gain and +18 dBm of output
power. Matching is 50 Ω with typical return loss
better than 15 dB. This amplifier requires dual DC
supplies: 5 V (190 mA) and a low current
–5 V (<1 mA).
The MAAM-011109 integrates an ultra-broadband
bias choke, DC blocking and bypass capacitors.
Other features include a gate bias adjust pin to
change current setting for power or temperature, a
gain trim control pin that allows 15 dB of gain control
(0 to -1V), and a temperature compensated detector
pin that provides a DC voltage in relation to output
power.
The MAAM-011109 is ideally suited for any
application that requires 50 Ω gain from 10 MHz to
40 GHz. It is useful in applications where the
incoming signal varies over a broad bandwidth such
as laboratory, instrumentation, and defense
applications.
This device is housed in a leadless 5 X 5 X 1.3 mm
package that can be handled and placed with
standard pick and place assembly equipment. The
package base is a two layer laminate with overmold
fully compatible with PCB environment and wash
conditions. The module includes a GaAs MMIC that
is fully passivated for performance and reliability.
Pin Configuration
Functional Schematic
Pin No. Pin Name Function
1 RFIN RF Input
2 VE -5 V Supply
3 N/C No Connection
4 VG Gate Adjust (optional)
5 RFOUT RF Output
6 VD +5 V Supply
7 BC VD Bypass (optional)
No Connection
8 VDET Power Detector
9 VC Gain Control
10 Paddle3 Ground
3. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
RFIN
N/C
RFOUT
VDET
VG
1
2 3 4
6789
VE
VCBCVD
5
Wideband Amplifier
10 MHz - 40 GHz
Rev. V2
MAAM-011109
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
2
Electrical Specifications: TA = +25C, VD = +5 V, VE = -5 V, VC = Open, ZIN = ZOUT = 50 Ω
Parameter Test Conditions Units Min. Typ. Max.
Gain
0.1 GHz
2 GHz
12 GHz
20 GHz
32 GHz
40 GHz
dB
—
11.0
10.0
10.0
8.0
—
12.0
13.0
12.0
11.5
11.0
8.0
—
Isolation 0.01 - 40 GHz dB — 22 —
Input Return Loss 0.01 - 40 GHz dB — 13 —
Output Return Loss 0.01 - 40 GHz dB — 9 —
Noise Figure 0.01 - 40 GHz dB — 3.5 —
P1dB
0.1 GHz
10 GHz
40 GHz
dBm —
+18
+17
+13
—
Output IP3
0.1 GHz
10 GHz
40 GHz
dBm —
+26
+24
+16
—
Bias Current VD = +5 V, VE = -5 V mA — 170 —
Parameter Absolute Max.
Input Power +17 dBm
Drain Supply Voltage +8 Volts
Junction Temperature7 +150°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Absolute Maximum Ratings4,5,6
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. MACOM does not recommend sustained operation near
these survivability limits.
6. Operating at nominal conditions with TJ ≤ 150°C will ensure
MTTF > 1 x 106 hours.
7. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN))
Typical thermal resistance (ӨJC) = 21°C/W
a) For TC = 25°C,
TJ = 43°C @ 5 V, 190 mA, POUT = 20 dBm, PIN = 7 dBm
b) For TC = 85°C,
TJ = 103°C @ 5 V, 190 mA, POUT = 20 dBm, PIN = 7 dBm
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Class 1B devices.
Wideband Amplifier
10 MHz - 40 GHz
Rev. V2
MAAM-011109
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
3
Application Schematic
Recommended PCB Layout
Component
Value
Package
C1 0.22 µF 0201
L1 470 Ω 0603
Parts List
2
5
4
6789
1
Paddle
For proper MAAM-011109 operation a DC voltage
must be applied at the VE (-5 V) and VD (+5 V) pins
in that order. The optional VG pin maybe used to
override the automatic VE bias network to hard set
the gate. Adjusting VG from -0.2 V to -0.6 V will
change the quiescent current. If VG is used, VE
should be left unconnected.
The VC pin is typically left unconnected unless gain
control or output power limiting is desired. Please
refer to the ―Variable Gain/Limiting‖ section for
detailed usage.
The VD pin should be bypassed with at least 0.1 µF
for stability. For operation below 100 MHz a ferrite
bead (Murata BLM18BB471) must be inserted
between the VD pin and bypass capacitor. The VG
and VC pins must also be bypassed with a 0.1 µF
capacitor if operating below 100 MHz.
The VDET pin is typically left unconnected unless a
voltage reference is desired that is correlated to the
output power. Please refer to the ―Internal Detector‖
section for detailed usage.
The BC pin is typically left unconnected unless gain
bandwidth and shape change is desired. Please
refer to an application note on this pin.
The input and output pins are internally DC blocked.
No more than +/- 12 V should ever be present on
these RF only pins.
The backside paddle of the MAAM-011109 should
be connected to ground with as many vias as
possible to maximize high frequency performance,
thermal dissipation, and stability.
Application Information for DC & pins
Wideband Amplifier
10 MHz - 40 GHz
Rev. V2
MAAM-011109
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
4
Typical Performance Curves over Temperature
Input Return Loss
Gain Noise Figure
Output Return Loss
Output P1dB Output IP3
0
5
10
15
20
010 20 30 40
+25°C
-40°C
+85°C
Frequency (GHz)
0
5
10
15
010 20 30 40
+25°C
-40°C
+85°C
Frequency (GHz)
-30
-20
-10
0
010 20 30 40
+25°C
-40°C
+85°C
Frequency (GHz)
-30
-20
-10
0
010 20 30 40
+25°C
-40°C
+85°C
Frequency (GHz)
0
10
20
30
010 20 30 40
+25°C
-40°C
+85°C
Frequency (GHz)
0
10
20
30
010 20 30 40
+25°C
-40°C
+85°C
Frequency (GHz)
Wideband Amplifier
10 MHz - 40 GHz
Rev. V2
MAAM-011109
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
5
Typical Performance Curves vs. Voltage and Current
Input Return Loss
Gain Noise Figure
Output Return Loss
Output P1dB Output IP3
0
5
10
15
20
010 20 30 40
3.3 V, 150 mA
3.3 V, 190 mA
5 V, 150 mA
5 V, 190 mA
Frequency (GHz)
0
5
10
15
010 20 30 40
3.3 V, 150 mA
3.3 V, 190 mA
5 V, 150 mA
5 V, 190 mA
Frequency (GHz)
-30
-20
-10
0
010 20 30 40
3.3 V, 150 mA
3.3 V, 190 mA
5 V, 150 mA
5 V, 190 mA
Frequency (GHz)
-30
-20
-10
0
010 20 30 40
3.3 V, 150 mA
3.3 V, 190 mA
5 V, 150 mA
5 V, 190 mA
Frequency (GHz)
0
10
20
30
010 20 30 40
3.3 V, 150 mA
3.3 V, 190 mA
5 V, 150 mA
5 V, 190 mA
Frequency (GHz)
0
10
20
30
010 20 30 40
3.3 V, 150 mA
3.3 V, 190 mA
5 V, 150 mA
5 V, 190 mA
Frequency (GHz)
Wideband Amplifier
10 MHz - 40 GHz
Rev. V2
MAAM-011109
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
6
Typical Performance Curves
Stability Factor
Isolation Gain vs. Frequency, VC = -0.9 to 1.1 V
Output Saturated Power
Gain @ 5 GHz vs. Control Voltage Low Frequency Response
0
5
10
15
20
25
010 20 30 40
Frequency (GHz)
-20
-10
0
10
20
-1.2 -0.6 0 0.6 1.2
Voltage (V)
-30
-20
-10
0
10
20
0.00 0.05 0.10 0.15 0.20
S21
S11
S22
Frequency (GHz)
-20
-10
0
10
20
010 20 30 40
Frequency (GHz)
0
2
4
6
8
10
010 20 30 40
Frequency (GHz)
-60
-50
-40
-30
-20
-10
0
010 20 30 40
+25°C
-40°C
+85°C
Frequency (GHz)
Wideband Amplifier
10 MHz - 40 GHz
Rev. V2
MAAM-011109
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
7
Typical Performance Curves
Current vs. Gate Voltage
VDET vs. Output Power VDET vs. Output Power @ 2 GHz
Current vs. Control Voltage
-10 -5 0 5 10 15 20 25
+25°C
-40°C
+85°C
2000
2500
3000
3500
4000
Output Power (dBm)
2000
2500
3000
3500
4000
-10 -5 0 5 10 15 20 25
2 GHz
10 GHz
25 GHz
Output Power (dBm)
0
50
100
150
200
250
300
-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2
Voltage (VG)
Wideband Amplifier
10 MHz - 40 GHz
Rev. V2
MAAM-011109
8
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
8
Lead-Free 5 mm 9-lead LGA
† Reference Application Note S2083 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is gold over nickel.
Application Details
Bandwidth, Power, Noise and Linearity
VD and ID affect both the bandwidth (response
flatness), power available, noise figure, and linearity
of the amplifier. Higher currents and lower VD
increase high frequency gain but reduce the P1dB
and the OIP3 numbers. If the device is driven to
P1dB and on into PSAT the current, ID, will naturally
reduce. The device will return to the quiescent ID
value once the input power is reduced. Finally,
higher ID and VD values increase the device noise
figure.
Temperature also affects the bandwidth, gain and
noise figure of the device. Lower temperatures
increase gain and bandwidth and reduce the noise
figure. Temperature has little effect on power and
linearity.
Broadband Amplifier Applications
The MAAM-011109 also has a low enough noise
figure to be used in instrumentation front ends and
buffer applications. It also has very flat response
with low group delay distortion so it can be used in
pulse applications. For higher gains multiple
amplifiers may be cascaded. It also makes a very
good low cost optical driver capable of delivering to
8 V p-p into 50 Ω.
Variable Gain/Limiting Applications
The gain of the MAAM-011109 can be easily
controlled with the VC pin. The gain reduction is
almost linear with VC between 0.1 V to -0.8 V. Below
-0.7 V internal ESD protection diodes will draw
increasing current (50 mA at -1.0 V). The VC pin
should not be driven below -1 V or above 1.2 V. The
nominal open circuit voltage at the VC pin is 0.8 V.
Reducing VC below 0.8 V will also reduce ID. Gain,
P1dB, and PSAT will all be reduced as VC is lowered.
Limiting applications and zero crossing adjustment
can be done by adjusting the VG and VC pins
together.
Internal Detector
The VDET pin is connected to an internal diode
detector. This pin should be connected to a high
impedance (>50 kΩ) or left unconnected. The
detector is internally connected so that it responds
predominately to the power generated by the
amplifier. The detector has a low pass characteristic
which rolls off gradually above 2 GHz. The detector
is temperature compensated. Finally, even with zero
output power the detector has a DC output voltage
proportional to VD (nominally 2.8 V for VD = 5 V).
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All Dimensions are in mm
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MAAM-011109-TR1000 MAAM-011109