© 2018 IXYS CORPORATION, All Rights Reserved DS100804B(06/18)
X-Class HiPERFET
Power MOSFET
N-Channel Enhancement Mode
IXFA8N85XHV
IXFP8N85X
IXFQ8N85X
VDSS = 850V
ID25 = 8A
RDS(on)
850m
Features
International Standard Packages
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 850 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.5 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 125C 750 A
RDS(on) VGS = 10V, ID = 4A, Note 1 850 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 850 V
VDGR TJ= 25C to 150C, RGS = 1M850 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C8A
IDM TC= 25C, Pulse Width Limited by TJM 16 A
IATC= 25C4A
EAS TC= 25C 300 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PDTC= 25C 200 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263HV) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220 & TO-3P) 1.13 / 10 Nm/lb.in
Weight TO-263HV 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
PreliminaryTechnical Information
G
S
TO-263HV (IXFA)
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
G
DS
D (Tab)
TO-3P (IXFQ)
TO-220 (IXFP)
D (Tab)
S
GD
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA8N85XHV IXFP8N85X
IXFQ8N85X
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 4A, Note 1 2.7 4.5 S
RGi Gate Input Resistance 3
Ciss 654 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 714 pF
Crss 11 pF
Co(er) 40 pF
Co(tr) 120 pF
Qg(on) 17.0 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 4A 3.6 nC
Qgd 10.0 nC
td(on) 15 ns
tr 25 ns
td(off) 32 ns
tf 23 ns
RthJC 0.63 C/W
RthCS TO-220 0.50 C/W
TO-3P 0.21 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A
RG = 10 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 8 A
ISM Repetitive, pulse Width Limited by TJM 32 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 125 ns
QRM 1.1 μC
IRM 18.0 A
IF = 4A, -di/dt = 100A/μs
VR = 100V
© 2018 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
1
2
3
4
5
6
7
8
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
8V
7V
9V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
1
2
3
4
5
6
7
8
0 2 4 6 8 1012141618
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 4A Value vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 8A
I
D
= 4A
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
8V
7V
9V
Fig. 5. R
DS(on)
Normalized to I
D
= 4A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 2 4 6 8 1012141618
ID - Amperes
RDS(on) - Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
BVDSS / VGS(th) - Normalized
BV
DSS
V
GS(th)
IXFA8N85XHV IXFP8N85X
IXFQ8N85X
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA8N85XHV IXFP8N85X
IXFQ8N85X
Fig. 7. Maximum Drain Current vs. Case Temperature
0
1
2
3
4
5
6
7
8
9
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Transconductance
0
1
2
3
4
5
6
7
00.511.522.533.544.555.56
I
D
- Amperes
g
f s
- Siemens
125
o
C
25
o
C
T
J
= - 40
o
C
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 8. Input Admittance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 11. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16 18
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 425V
I
D
= 4A
I
G
= 10mA
Fig. 12. Capacitance
0.1
1
10
100
1000
10000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
© 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_8N85X(U3-D901) 2-17-17
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 14. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
1ms
100μs
R
DS(
on
)
Limit
10ms
DC
Fig. 13. Output Capacitance Stored Energy
0
2
4
6
8
10
12
14
0 100 200 300 400 500 600 700 800 900
V
DS
- Volts
E
OSS
- MicroJoules
IXFA8N85XHV IXFP8N85X
IXFQ8N85X
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA8N85XHV IXFP8N85X
IXFQ8N85X
1 = Gate
2 = Source
3 = Drain
TO-263HV Outline
TO-3P Outline
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.