Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54514AP/AFP
7-UNIT 50mA TRANSISTOR ARRAY
CIRCUIT DIAGRAM
V
mA
V
W
°C
°C
–0.5 ~ +20
50
–0.5 ~ +10
1.47(AP)/1.00(AFP)
–20 ~ +75
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
VCEO
IC
VI
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
10K
2.8K
INPUT
OUTPUT
GND
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
The seven circuits share the GND.
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
NC
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
16P4(P)
Package type 16P2N-A(FP)
INPUT OUTPUT
NC : No connection
DESCRIPTION
M54514AP and M54514AFP are seven-circuit transistor ar-
rays. The circuits are made of NPN transistors. Both the
semiconductor integrated circuits perform high-current driv-
ing with extremely low input-current supply.
FEATURES
ÁMedium breakdown voltage (BV CEO ≥ 20V)
ÁSynchronizing current (Ic(max) = 50mA)
ÁLow output saturation voltage
ÁW ide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M54514AP and M54514AFP each have seven circuits
consisting of NPN transistors. The transistor emitters are all
connected to the GND pin (pin 8).
The transistors allow synchronous flow of 50mA collector
current. A maximum of 20V voltage can be applied between
the collector and emitter.
The M54514FP is enclosed in a molded small flat package,
enabling space-saving design.