MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54514AP/AFP 7-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54514AP and M54514AFP are seven-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES A Medium breakdown voltage (BV CEO 20V) A Synchronizing current (Ic(max) = 50mA) A Low output saturation voltage A Wide operating temperature range (Ta = -20 to +75C) IN1 1 16 O1 IN2 2 15 O2 IN3 3 14 O3 IN4 4 13 O4 OUTPUT IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 8 9 16P4(P) Package type 16P2N-A(FP) NC NC : No connection CIRCUIT DIAGRAM APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals OUTPUT 2.8K INPUT 10K FUNCTION The M54514AP and M54514AFP each have seven circuits consisting of NPN transistors. The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 50mA collector current. A maximum of 20V voltage can be applied between the collector and emitter. The M54514FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol Parameter GND The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : (Unless otherwise noted, Ta = -20 ~ +75 C) Conditions VCEO IC Collector-emitter voltage Collector current Output, H Current per circuit output, L VI Pd Input voltage Power dissipation Ta = 25C, when mounted on board Topr Operating temperature Storage temperature Tstg Ratings Unit -0.5 ~ +20 50 V mA -0.5 ~ +10 1.47(AP)/1.00(AFP) V W -20 ~ +75 -55 ~ +125 C C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54514AP/AFP 7-UNIT 50mA TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Limits Parameter Symbol VO IC (Unless otherwise noted, Ta = -20 ~ +75C) Output voltage VIH Collector current "H" input voltage VIL "L" input voltage ELECTRICAL CHARACTERISTICS min 0 typ -- max 20 0 -- 40 2.4 0 -- -- 0.2 Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) VI = 2.4V, IC = 20mA Collector-emitter saturation voltage VI = 2.4V, IC = 40mA V V Limits Test conditions Input current DC amplification factor h FE V mA (Unless otherwise noted, Ta = -20 ~ +75C) Symbol II 8 Unit ICEO = 20A VI = 2.4V VCE = 4V, IC = 40mA, Ta = 25C Unit min typ+ max 20 -- -- 0.04 -- 0.17 -- 0.08 0.23 -- 0.7 1.1 mA 80 200 -- -- V V + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter Turn-on time ton toff CL = 15pF (note 1) Turn-off time min -- typ 85 max -- -- 460 -- Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VO Measured device 50% 50% INPUT RL OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 2.4VP-P (2) Output conditions : RL = 250, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54514AP/AFP 7-UNIT 50mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 2.0 50 VI = 2.4V M54514AFP 1.0 0.5 0 25 0 103 50 75 Ta = 25C 40 Ta = 75C 30 20 10 0 100 0 0.05 0.10 0.15 0.20 Ambient temperature Ta (C) Output saturation voltage VCE (sat) (V) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 50 VCE = 4V 7 DC amplification factor hFE Collector current Ic (mA) 1.5 VCE = 4V Ta = -20C Ta = 75C 5 3 Collector current Ic (mA) Power dissipation Pd (W) Ta = -20C M54514AP Ta = 75C 2 Ta = 25C 102 7 Ta = -20C 5 3 40 Ta = 25C 30 20 10 2 101 0 10 2 3 5 7 101 2 5 7 102 3 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Collector current Ic (mA) Input Characteristics 5 Input current II (mA) 4 Ta = -20C 3 2 Ta = 25C Ta = 75C 1 0 0 2 4 6 8 10 Input voltage VI (V) Aug. 1999