Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Description
Agilent’s AT-30511 and AT-30533
are high performance NPN bipolar
transistors that have been
optimized for maximum fT at low
voltage operation, making them
ideal for use in battery powered
applications in wireless markets.
The AT-30533 uses the 3 lead
SOT-23, while the AT-30511 places
the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a multi-
plicity of tasks. The 5 emitter
finger interdigitated geometry
yields an extremely fast transistor
with high gain and low operating
currents.
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-30511: 1.1 dB NF, 16 dB GA
AT-30533: 1.1 dB NF, 13 dB GA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available[1]
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA
bias. Voltage breakdowns are high
enough for use at 5 volts. High
gain capability at 1 V, 1 mA makes
these devices a good fit for
900 MHz pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz fT,
30 GHz fMAX Self-Aligned-
Transistor (SAT) process. The die
are nitride passivated for surface
protection. Excellent device
uniformity, performance and
reliability are produced by the use
of ion-implantation, self-alignment
techniques, and gold metalization
in the fabrication of these devices.
AT-30511
AT-30533
Outline Drawing
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
BASE EMITTER
EMITTER COLLECTO
R
BASE EMITTER
COLLECTOR
305
305
SOT-23 (AT-30533)
SOT-143 (AT-30511)
2
AT-30511, AT-30533 Absolute Maximum Ratings
Symbol Parameter Units Absolute Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 11
VCEO Collector-Emitter Voltage V 5.5
ICCollector Current mA 8
PTPower Dissipation[2] [3] mW 100
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 95°C.
Thermal Resistance[2]:
θjc = 550°C/W
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and
AT-310 Geometries.
1000 pF
V
BB
W = 10 L = 1860
W = 10 L = 1000 W = 30 L = 100 W = 30 L = 100
W = 10 L = 1860 1000 pF
V
CC
25 Ω
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
Electrical Specifications, TA = 25°C
AT-30511 AT-30533
Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max
NF Noise Figure
VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 1.1[1] 1.4[1] 1.1[2] 1.4[2]
GAAssociated Gain
VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 14[1] 16[1] 11[2] 13[2]
hFE Forward Current VCE = 2.7 V - 70 300 70 300
Transfer Ratio IC = 1 mA
ICBO Collector Cutoff Current VCB = 3 V µA 0.03 0.2 0.03 0.2
IEBO Emitter Cutoff Current VEB = 1 V µA 0.1 1.5 0.1 1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
3
AT-30511, AT-30533 Characterization Information, TA = 25°C
AT-30511 AT-30533
Symbol Parameters and Test Conditions Units Typ Typ
P1dB Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dBm 7 7
G1dB Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB 16.5 15
IP3Output Third Order Intercept Point,
VCE = 2.7 V, IC = 5 mA (opt tuning) f = 0.9 GHz dBm 17 17
|S21|E2Gain in 50 Ω System; VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 10 9
CCB Collector-Base Capacitance VCB = 3V, f = 1 MHz pF 0.04 0.04
P 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
10
4
2
0.5 2.5
6
2.0
8
5 mA
2 mA
G 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
2 mA
G 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
2 mA
Typical Performance
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
Figure 7. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
Figure 6. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
Figure 5. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 2.7 V.
Figure 4. AT-30533 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 3. AT-30511 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 2. AT-30511 and AT-30533
Minimum Noise Figure and Amplifier
NF[1] vs. Frequency and Current at
VCE = 2.7 V.
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
2.5
1.0
0.5
0.5 2.5
1.5
2.0
2.0
1 mA
5 mA
AMPLIFIER NF
NF MIN.
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20 5 mA
1 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2
20 5 mA
1 mA
4
P 1dB (dBm)
0
-4
FREQUENCY (GHz)
1.0 1.5
6
0
-2
0.5 2.5
2
2.0
4
2 mA
5 mA
G 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
2 mA
Figure 13. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 12. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 11. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 1 V.
AT-30511, AT-30533 Typical Performance, continued
P 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
10
4
2
0.5 2.5
6
2.0
8
2 mA
5 mA
Figure 8. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 5 V.
Figure 9. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
Figure 10. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
G 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
2 mA
G 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
2 mA
Ga (dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0 100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
Ga (dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0 100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
IM3 (dBc)
-9
-80
POWER PER TONE (dBm)
-3 0
0
-60
-6 6
-40
3
-20
IM3 (dBc)
IM5 (dBc)
IM7 (dBc)
Figure 14. AT-30511 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC= 1 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
Figure 16. AT-30511 and AT-30533
Intermodulation Products vs. Output
Power at VCE = 2.7 V, IC= 10 mA,
900 MHz with Optimal Tuning.
Figure 15. AT-30533 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC= 1 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
G 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
2 mA
5
AT-30533 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.3 0.94 7 1.02
0.9 0.4 0.89 16 0.86
1.8 0.9 0.75 43 0.58
2.4 1.3 0.65 65 0.38
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30511 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.3 0.96 10 1.49
0.9 0.4 0.92 19 1.33
1.8 0.9 0.83 43 0.98
2.4 1.3 0.76 60 0.74
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30533 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.95 -5 10.90 3.51 174 -38.36 0.01 87 0.99 -3
0.5 0.91 -25 10.32 3.28 150 -25.08 0.06 73 0.95 -14
0.9 0.77 -41 9.44 2.97 128 -20.95 0.09 63 0.89 -24
1.0 0.73 -45 9.03 2.83 124 -20.21 0.10 61 0.88 -25
1.5 0.55 -62 7.75 2.44 102 -18.13 0.12 54 0.80 -33
1.8 0.46 -71 6.94 2.22 91 -17.33 0.14 51 0.77 -36
2.0 0.41 -76 6.51 2.12 85 -16.84 0.14 50 0.74 -38
2.4 0.30 -85 5.45 1.87 73 -16.05 0.16 49 0.71 -41
3.0 0.17 -95 4.26 1.63 57 -14.80 0.18 49 0.68 -46
4.0 0.02 -139 2.71 1.37 37 -12.58 0.24 48 0.65 -57
5.0 0.12 61 1.56 1.20 19 -10.14 0.31 45 0.62 -69
AT-30511 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.97 -5 10.84 3.48 175 -39.42 0.01 86 0.99 -2
0.5 0.95 -24 10.51 3.35 155 -25.87 0.05 72 0.95 -14
0.9 0.85 -42 9.96 3.15 137 -21.46 0.08 61 0.92 -24
1.0 0.83 -46 9.66 3.04 133 -20.71 0.09 58 0.91 -26
1.5 0.70 -67 8.71 2.73 113 -18.44 0.12 46 0.84 -36
1.8 0.63 -78 8.06 2.53 102 -17.69 0.13 41 0.80 -40
2.0 0.59 -85 7.75 2.44 96 -17.27 0.14 37 0.77 -43
2.4 0.50 -100 6.73 2.17 84 -16.79 0.14 32 0.73 -48
3.0 0.39 -122 5.58 1.90 67 -16.32 0.15 27 0.68 -53
4.0 0.29 -161 3.97 1.58 45 -15.87 0.16 20 0.63 -63
5.0 0.27 153 2.64 1.36 25 -15.47 0.17 20 0.61 -72
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 17. AT-30511 Gains vs.
Frequency at VCE = 1 V, IC= 1 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 18. AT-30533 Gains vs.
Frequency at VCE = 2.7 V, IC= 1 mA.
6
AT-30533 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 2.7 V, IC = 1 mA
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.3 0.94 7 1.02
0.9 0.4 0.89 16 0.88
1.8 0.9 0.75 43 0.58
2.4 1.3 0.65 65 0.38
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30511 Typical Scattering Parameters, VCE = 2.7 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.97 -5 10.88 3.50 175 -40.13 0.01 86 0.999 -2
0.5 0.95 -23 10.58 3.38 156 -26.71 0.05 74 0.96 -13
0.9 0.86 -39 10.09 3.20 139 -22.28 0.08 63 0.93 -23
1.0 0.84 -43 9.83 3.10 135 -21.51 0.08 60 0.92 -25
1.5 0.72 -63 8.94 2.80 115 -19.15 0.11 49 0.85 -34
1.8 0.65 -73 8.32 2.60 105 -18.28 0.12 43 0.82 -38
2.0 0.61 -80 8.06 2.53 99 -17.83 0.13 40 0.79 -41
2.4 0.52 -93 7.06 2.25 86 -17.29 0.14 35 0.75 -46
3.0 0.41 -114 5.92 1.98 70 -16.72 0.15 30 0.70 -51
4.0 0.30 -150 4.35 1.65 48 -16.13 0.16 23 0.66 -61
5.0 0.26 165 3.06 1.42 28 -15.65 0.16 22 0.63 -69
AT-30511 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 2.7 V, IC = 1 mA
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.3 0.96 10 1.49
0.9 0.4 0.92 19 1.33
1.8 0.9 0.83 43 0.98
2.4 1.3 0.76 60 0.74
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30533 Typical Scattering Parameters, VCE = 2.7 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.95 -5 10.76 3.45 174 -39.49 0.01 87 0.999 -2
0.5 0.92 -23 10.21 3.24 151 -26.05 0.05 74 0.95 -13
0.9 0.78 -39 9.42 2.96 130 -21.78 0.08 64 0.91 -22
1.0 0.75 -42 9.04 2.83 126 -21.05 0.09 63 0.90 -23
1.5 0.58 -59 7.83 2.46 105 -18.88 0.11 55 0.83 -31
1.8 0.49 -66 7.04 2.25 94 -18.08 0.12 53 0.79 -34
2.0 0.44 -71 6.64 2.15 88 -17.58 0.13 52 0.77 -36
2.4 0.33 -79 5.59 1.90 76 -16.77 0.15 51 0.74 -39
3.0 0.21 -87 4.40 1.66 60 -15.50 0.17 51 0.71 -44
4.0 0.05 -88 2.87 1.39 40 -13.20 0.22 52 0.68 -54
5.0 0.09 47 1.72 1.22 22 -10.67 0.29 49 0.66 -66
Figure 19. AT-30511 Gains vs.
Frequency at VCE = 2.7 V, IC= 1 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
Figure 20. AT-30511- Gains vs.
Frequency at VCE = 2.7 V, IC= 1 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20 MSG
MAG
S21 MSG
7
AT-30533 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 2.7 V, IC = 5 mA
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 1.1 0.71 8 0.78
0.9 1.2 0.61 16 0.66
1.8 1.5 0.42 39 0.41
2.4 1.8 0.28 57 0.25
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30533 Typical Scattering Parameters, VCE = 2.7 V, IC = 5 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.84 -12 22.26 12.98 164 -39.96 0.01 82 0.98 -5
0.5 0.57 -39 18.54 8.46 121 -28.03 0.04 71 0.80 -18
0.9 0.37 -46 14.97 5.60 100 -24.09 0.06 70 0.73 -22
1.0 0.34 -46 14.20 5.13 96 -23.32 0.07 69 0.72 -22
1.5 0.23 -43 11.24 3.65 81 -20.30 0.10 68 0.69 -26
1.8 0.20 -38 9.85 3.11 73 -18.88 0.11 67 0.68 -28
2.0 0.19 -35 9.05 2.84 69 -18.02 0.13 66 0.68 -30
2.4 0.17 -27 7.70 2.43 61 -16.50 0.15 64 0.67 -33
3.0 0.15 -17 6.12 2.02 50 -14.57 0.19 61 0.66 -39
4.0 0.15 -2 4.30 1.64 34 -11.90 0.25 55 0.64 -49
5.0 0.17 11 3.07 1.42 19 -9.66 0.33 47 0.61 -61
AT-30511 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 2.7 V, IC = 5 mA
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 1.1 0.77 9 1.10
0.9 1.2 0.71 18 0.96
1.8 1.5 0.60 45 0.66
2.4 1.8 0.51 65 0.47
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30511 Typical Scattering Parameters, VCE = 2.7 V, IC = 5 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.88 -11 22.49 13.32 169 -40.50 0.01 83 0.97 -5
0.5 0.70 -48 20.42 10.49 134 -28.45 0.04 64 0.82 -22
0.9 0.49 -72 17.77 7.73 111 -25.24 0.05 57 0.70 -30
1.0 0.46 -77 17.09 7.15 107 -24.70 0.06 55 0.69 -31
1.5 0.30 -100 14.44 5.27 89 -22.62 0.07 53 0.62 -35
1.8 0.24 -112 13.10 4.52 81 -21.65 0.08 52 0.59 -37
2.0 0.21 -120 12.31 4.13 76 -21.05 0.09 52 0.58 -39
2.4 0.16 -140 10.94 3.52 67 -20.01 0.10 50 0.57 -42
3.0 0.13 -172 9.18 2.88 55 -18.55 0.12 48 0.55 -46
4.0 0.15 137 7.03 2.25 38 -16.57 0.15 44 0.53 -55
5.0 0.21 106 5.44 1.87 22 -14.88 0.18 39 0.52 -64
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20 MSG
MAG
S21 MSG
Figure 22. AT-30533 Gains vs.
Frequency at VCE = 2.7 V, IC= 5 mA.
Figure 21. AT-30511 Gains vs.
Frequency at VCE = 2.7 V, IC= 5 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20 MSG
MAG
S21
8
AT-30533 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 1 mA ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.3 0.94 7 1.02
0.9 0.4 0.89 16 0.98
1.8 0.9 0.75 43 0.58
2.4 1.3 0.65 65 0.38
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30533 Typical Scattering Parameters, VCE = 5 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.96 -5 10.59 3.38 174 -39.38 0.01 85 0.999 -2
0.5 0.92 -22 10.07 3.19 151 -26.22 0.05 74 0.95 -13
0.9 0.79 -37 9.32 2.92 131 -21.99 0.08 65 0.91 -21
1.0 0.77 -41 8.94 2.80 127 -21.21 0.09 63 0.90 -23
1.5 0.60 -57 7.76 2.44 106 -19.02 0.11 56 0.83 -30
1.8 0.51 -64 7.01 2.24 95 -18.16 0.12 54 0.80 -33
2.0 0.46 -69 6.61 2.14 89 -17.66 0.13 52 0.78 -35
2.4 0.35 -76 5.59 1.90 77 -16.85 0.14 51 0.75 -39
3.0 0.23 -83 4.43 1.66 61 -15.58 0.17 51 0.72 -43
4.0 0.07 -85 2.92 1.40 41 -13.34 0.22 52 0.69 -53
5.0 0.07 38 1.79 1.23 23 -10.85 0.29 49 0.67 -65
AT-30511 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 1 mA
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.3 0.96 10 1.49
0.9 0.4 0.92 19 1.33
1.8 0.9 0.83 43 0.98
2.4 1.3 0.76 60 0.74
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30511 Typical Scattering Parameters, VCE = 5 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.98 -5 10.56 3.37 175 -40.34 0.01 87 0.999 -2
0.5 0.96 -21 10.30 3.27 157 -26.99 0.04 74 0.96 -13
0.9 0.88 -37 9.83 3.10 139 -22.52 0.07 64 0.93 -22
1.0 0.85 -41 9.57 3.01 136 -21.75 0.08 62 0.92 -24
1.5 0.74 -59 8.71 2.73 116 -19.23 0.11 51 0.86 -33
1.8 0.67 -69 8.13 2.55 106 -18.34 0.12 45 0.82 -38
2.0 0.63 -75 7.88 2.48 100 -17.85 0.13 42 0.80 -41
2.4 0.55 -88 6.90 2.21 87 -17.23 0.14 37 0.77 -45
3.0 0.43 -106 5.79 1.95 71 -16.53 0.15 31 0.72 -50
4.0 0.31 -138 4.29 1.64 49 -15.83 0.16 23 0.67 -60
5.0 0.25 178 3.04 1.42 29 -15.38 0.17 20 0.64 -69
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 24. AT-30533 Gains vs.
Frequency at VCE = 5 V, IC= 1 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
Figure 23. AT-30511 Gains vs.
Frequency at VCE = 5 V, IC= 1 mA.
9
AT-30533 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 5 mA ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 1.1 0.71 8 0.78
0.9 1.2 0.61 16 0.66
1.8 1.5 0.42 39 0.41
2.4 1.8 0.28 57 0.25
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30533 Typical Scattering Parameters, VCE = 5 V, IC = 5 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.86 -11 22.22 12.92 165 -40.16 0.01 83 0.98 -5
0.5 0.59 -37 18.69 8.60 122 -28.05 0.04 72 0.81 -18
0.9 0.40 -43 15.19 5.75 101 -24.14 0.06 70 0.74 -22
1.0 0.37 -43 14.43 5.27 97 -23.37 0.07 70 0.73 -22
1.5 0.27 -40 11.49 3.75 82 -20.30 0.10 68 0.70 -26
1.8 0.24 -37 10.11 3.20 75 -18.88 0.11 67 0.69 -28
2.0 0.23 -35 9.33 2.93 70 -18.05 0.13 66 0.68 -30
2.4 0.20 -30 7.97 2.50 62 -16.55 0.15 64 0.67 -33
3.0 0.18 -24 6.40 2.09 51 -14.64 0.19 61 0.66 -38
4.0 0.17 -14 4.58 1.70 36 -12.00 0.25 54 0.64 -49
5.0 0.16 -2 3.37 1.47 21 -9.83 0.32 46 0.61 -60
AT-30511 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 5 mA ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 1.1 0.77 9 1.10
0.9 1.2 0.71 18 0.96
1.8 1.5 0.60 45 0.66
2.4 1.8 0.51 65 0.47
Notes:
1. Matching constraints may make Fmin values associated with high |Γopt| values
unachievable in physical circuits. See Fig. 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-30511 Typical Scattering Parameters, VCE = 5 V, IC = 5 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.90 -10 22.26 12.98 170 -40.75 0.01 82 0.97 -5
0.5 0.74 -43 20.41 10.49 136 -28.46 0.04 66 0.83 -22
0.9 0.53 -66 17.93 7.88 113 -25.18 0.06 58 0.72 -30
1.0 0.49 -70 17.28 7.31 109 -24.53 0.06 57 0.70 -31
1.5 0.33 -89 14.72 5.45 91 -22.46 0.08 54 0.63 -36
1.8 0.27 -99 13.41 4.68 83 -21.45 0.08 53 0.60 -38
2.0 0.24 -105 12.64 4.29 78 -20.87 0.09 52 0.59 -39
2.4 0.18 -120 11.27 3.66 69 -19.79 0.10 50 0.57 -42
3.0 0.12 -147 9.54 3.00 57 -18.34 0.12 48 0.55 -46
4.0 0.11 154 7.41 2.35 40 -16.45 0.15 43 0.53 -55
5.0 0.17 114 5.86 1.96 24 -14.84 0.18 38 0.52 -63
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20 MSG
MAG
S21
Figure 25. AT-30511 Gains vs.
Frequency at VCE = 5 V, IC= 5 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20 MSG
MAG
S21 MSG
Figure 26. AT-30533 Gains vs.
Frequency at VCE = 5 V, IC= 5 mA.
10
Ordering Information
Part Number Increment Comments
AT-30511-BLK 100 Bulk
AT-30511-TR1 3000 7" Reel
AT-30533-BLK 100 Bulk
AT-30533-TR1 3000 7" Reel
SOT-143 Plastic Package
Package Dimensions
SOT-23 Plastic Package
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.10 (0.004)
0.013 (0.0005)
0.92 (0.036)
0.78 (0.031)
E
E
B
C
XXX
PACKAGE
MARKING
CODE 1.40 (0.055)
1.20 (0.047) 2.65 (0.104)
2.10 (0.083)
0.54 (0.021)
0.37 (0.015)
0.60 (0.024)
0.45 (0.018)
2.04 (0.080)
1.78 (0.070)
3.06 (0.120)
2.80 (0.110) 0.15 (0.006)
0.09 (0.003)
1.02 (0.041)
0.85 (0.033)
0.69 (0.027)
0.45 (0.018)
1.40 (0.055)
1.20 (0.047) 2.65 (0.104)
2.10 (0.083)
0.60 (0.024)
0.45 (0.018)
0.54 (0.021)
0.37 (0.015)
0.10 (0.004)
0.013 (0.0005)
1.02 (0.040)
0.89 (0.035)
2.04 (0.080)
1.78 (0.070)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.152 (0.006)
0.066 (0.003)
0.69 (0.027)
0.45 (0.018)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
XXX
PACKAGE
MARKING
CODE
C
BE
SIDE VIEW END VIEW
TOP VIEW
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-8918E (11/99)
