Features Applications
PHOTODIODE
Si PIN photodiode
Flat response characteristics up to high frequency bands
S9055 series
S9055 series Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). Their low capacitance (less than
1 pF) makes them ideal for combination with high-speed trans-impedance amplifiers.
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Flat response characteristics up to high frequency bands
Frequency flatness: -0.5 dB Max.
(V
R
=2 V, λ=830 nm, f=100 MHz)
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High-speed response
S9055: 1.5 GHz (V
R
=2 V, -3 dB)
S9055-01: 2 GHz (V
R
=2 V, -3 dB)
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Low capacitance
S9055: 0.8 pF (V
R
=2 V)
S9055-01: 0.5 pF (V
R
=2 V)
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Highly reliable package: 3-pin TO-18 package
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Optical fiber communications
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High-speed measurement system
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Optical inter-connection
1
■ General rating / absolute maximum ratings (Ta=25 °C)
Parameter Symbol S9055 S9055-01 Unit
Active area - φ0.2 φ0.1 mm
Reverse voltage VR Max. 20 V
Operating temperature Topr -40 to +100 °C
Storage temperature Tstg -55 to +125 °C
■ Electrical and optical characteristics (Ta=25 °C)
S9055 S9055-01
Parameter Symbol Condition Min. Typ. Max. Min. Typ. Max. Unit
Spectral response range λ320 to 1000 320 to 1000 nm
Peak sensitivity wavelength λp-700 - - 700 -nm
Photo sensitivity S λ=850 nm 0.2 0.25 - 0.2 0.25 - A/W
Dark current IDVR=2 V - 1 100 - 1 100 pA
Terminal capacitance Ct VR=2 V, f=1 MHz - 0.8 1.2 - 0.5 0.75 pF
Cut-off frequency fc VR=2 V, RL=25 Ω
-3dB 1.0 1.5 -1.5 2 - GHz
Frequency flatness -VR=2 V, λ=850 nm
f=100 MHz - - -0.5 - - -0.5 dB
Si PIN photodiode S9055 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believ ed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
Cat. No. KPIN1065E04
Apr. 2006 DN
0.01 1100
0.1 10
100 fA
10 pA
1 pA
100 pA
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25
˚C
)
0.1 1100
10
100 fF
1 pF
10 pF
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
(Typ. Ta=25
˚C
)
S9055
S9055-01
2
■ Spectral response ■ Dark current vs. reverse voltage
■ Dimensional outline (unit: mm)
KPINB0275EB
KPINA0071EA
■ Terminal capacitance vs. reverse
voltage
KPINB0276EB
■ Frequency characteristics
KPINB0277EB KPINB0278EB
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
200 600 1000 1200
400 800
0
0.2
0.1
0.3
0.4
(Typ. Ta=25
˚C
)
KPINB0274EA
FREQUENCY
RELATIVE OUTPUT (dB)
100 kHz 1 MHz 10 GHz1 GHz
10 MHz 100 MHz
-15
-5
-10
0
5(Typ. Ta=25
˚C, V
R
=2 V, R
L
=25 Ω
)
S9055
S9055-01
FREQUENCY
RELATIVE OUTPUT (dB)
100 kHz 1 MHz 10 GHz1 GHz
10 MHz 100 MHz
-15
-5
-10
0
5(Typ. Ta=25
˚C, VR=2 V, RL=25 Ω
)
S9055
S9055-01
0.45
CASE
2.54 ± 0.2
13.5
2.7
3.6 ± 0.2
4.7 ± 0.1
5.4 ± 0.2
WINDOW
3.0 ± 0.1
PHOTOSENSITIVE
SURFACE
The glass window does not extend
beyond the upper edge of cap but
may be recessed a maximum of 0.1
mm from the cap edge.
LEAD
λ=830 nmλ=410 nm
