SiT8008B Low Power Programmable Oscillator Features ow Power, Standard Frequency Oscillator Applications Any frequency between 1 MHz and 110 MHz accurate to 6 decimal places 100% pin-to-pin drop-in replacement to quartz-based XO Excellent total frequency stability as low as 20 ppm Operating temperature from -40C to 85C. For 125C and/or -55C options, refer to SiT1618, SiT8918, SiT8920 Low power consumption of 3.5 mA typical at 1.8V Standby mode for longer battery life Fast startup time of 5 ms LVCMOS/HCMOS compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and field programmable oscillators RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free For AEC-Q100 oscillators, refer to SiT8924 and SiT8925 Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD, GPON, EPON, etc Ideal for high-speed serial protocols such as: USB, SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25C and nominal supply voltage. Table 1. Electrical Characteristics Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range Frequency Stability Operating Temperature Range f 1 - F_stab -20 - +20 ppm -25 - +25 ppm -50 - -20 - T_use -40 110 MHz Frequency Stability and Aging Inclusive of initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply voltage and load. +50 ppm Operating Temperature Range +70 C Extended Commercial - +85 C Industrial Supply Voltage and Current Consumption Supply Voltage Vdd 1.62 2.25 2.52 2.7 2.97 2.25 1.8 2.5 2.8 3.0 3.3 - 1.98 2.75 3.08 3.3 3.63 3.63 V V V V V V Current Consumption Idd - 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V - 3.7 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V - 3.5 4.1 mA No load condition, f = 20 MHz, Vdd = 1.8V - - 4.2 mA Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state - - 4.0 mA Vdd = 1.8V, OE = GND, Output in high-Z state - 2.1 4.3 A ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down - 1.1 2.5 A ST = GND, Vdd = 2.5V, Output is weakly pulled down - 0.2 1.3 A ST = GND, Vdd = 1.8V, Output is weakly pulled down LVCMOS Output Characteristics OE Disable Current Standby Current Duty Cycle Rise/Fall Time I_OD I_std Contact SiTime for 1.5V support DC 45 - 55 % All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6 Tr, Tf - 1 2 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% - 1.3 2.5 ns Vdd =1.8V, 20% - 80% - - 2 ns Output High Voltage VOH 90% - - Vdd Vdd = 2.25V - 3.63V, 20% - 80% IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL - - 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) 1.05 July 8, 2020 www.sitime.com SiT8008B Low Power Programmable Oscillator Table 1. Electrical Characteristics (continued) Parameters Symbol Min. Typ. Max. Unit Condition Input Characteristics Input High Voltage VIH 70% - - Vdd Pin 1, OE or ST Input Low Voltage VIL - - 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in 50 87 150 k Pin 1, OE logic high or logic low, or ST logic high 2 - - Pin 1, ST logic low M Startup and Resume Timing T_start - - 5 ms T_oe - - 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles T_resume - - 5 ms Measured from the time ST pin crosses 50% threshold T_jitt - 1.8 3 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V - 1.8 3 ps f = 75 MHz, Vdd = 1.8V - 12 25 ps f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V - 14 30 ps f = 75 MHz, Vdd = 1.8V - 0.5 0.9 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz - 1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Startup Time Enable/Disable Time Resume Time Measured from the time Vdd reaches its rated minimum value Jitter RMS Period Jitter Peak-to-peak Period Jitter T_pk RMS Phase Jitter (random) T_phj Table 2. Pin Description Pin Symbol Output Enable 1 OE/ST/NC Top View Functionality Standby No Connect H[1]: specified frequency output L: output is high impedance. Only output driver is disabled. H[1]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. Any voltage between 0 and Vdd or Open [1]: Specified frequency output. Pin 1 has no function. 2 GND Power Electrical ground 3 OUT Output Oscillator output 4 VDD Power Power supply voltage [2] OE/ST/NC 1 4 VDD GND 2 3 OUT Figure 1. Pin Assignments Notes: 1. In OE or ST mode, a pull-up resistor of 10 k or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 F or higher between Vdd and GND is required. 1.05 Page 2 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C Vdd -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C Junction Temperature[3] - 150 C Note: 3. Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[4] Package JA, 4 Layer Board JA, 2 Layer Board JC, Bottom (C/W) (C/W) (C/W) 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 Note: 4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[5] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 70C 80C 85C 95C Note: 5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C 1.05 Page 3 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Test Circuit and Waveform[6] Vdd Vout 4 Power Supply 0.1F Test Point 3 1 tf tr 80% Vdd 15pF (including probe and fixture capacitance) 2 50% 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd 1k OE/ST Function Figure 2. Test Circuit Figure 3. Waveform Note: 6. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams Vdd Vdd 90% Vdd 50% Vdd T_start Pin 4 Voltage [7] T_resume ST Voltage No Glitch during start up CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_resume: Time to resume from ST Figure 4. Startup Timing (OE/ST Mode) Figure 5. Standby Resume Timing (ST Mode Only) Vdd Vdd 50% Vdd OE Voltage OE Voltage 50% Vdd T_oe T_oe CLK Output CLK Output HZ HZ T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only) Note: 7. SiT8008 has "no runt" pulses and "no glitch" output during startup or resume. 1.05 Page 4 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Performance Plots[8] 1.8 2.5 2.8 3.0 3.3 6.0 DUT2 DUT3 DUT4 DUT5 DUT6 DUT7 DUT8 DUT9 DUT10 20 15 Frequency (ppm) 5.5 5.0 Idd (mA) DUT1 4.5 4.0 3.5 10 5 0 -5 -10 -15 -20 3.0 0 10 20 30 40 50 60 70 80 90 100 -40 110 -30 -20 -10 0 Frequency (MHz) Figure 8. Idd vs Frequency 2.5 V 2.8 V 3.0 V 20 30 40 50 60 70 80 Figure 9. Frequency vs Temperature 3.3 V 1.8 V 4.0 55 3.5 54 2.5 V 2.8 V 3.0 V 3.3 V 53 3.0 Duty cycle (%) RMS period jitter (ps) 1.8 V 10 Temperature (C) 2.5 2.0 1.5 1.0 52 51 50 49 48 47 0.5 46 0.0 0 10 20 30 40 50 60 70 80 90 100 45 110 0 10 20 Frequency (MHz) 2.8 V 3.0 V 3.3 V 1.8 V 2.5 2.5 2.0 2.0 1.5 1.0 0.5 60 70 80 90 100 110 2.5 V 2.8 V 3.0 V 3.3 V 1.5 1.0 0.5 0.0 0.0 -40 -15 10 35 60 85 -40 -15 10 35 60 85 Temperature (C) Temperature (C) Figure 12. 20%-80% Rise Time vs Temperature 1.05 50 Figure 11. Duty Cycle vs Frequency Fall time (ns) Rise time (ns) 2.5 V 40 Frequency (MHz) Figure 10. RMS Period Jitter vs Frequency 1.8 V 30 Page 5 of 17 Figure 13. 20%-80% Fall Time vs Temperature www.sitime.com SiT8008B Low Power Programmable Oscillator Performance Plots[8] 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 0.9 1.8 0.8 1.6 0.7 IPJ (ps) IPJ (ps) 1.8 V 2.0 1.4 1.2 2.5 V 2.8 V 3.0 V 3.3 V 0.6 0.5 1.0 0.4 10 30 50 70 90 10 110 30 50 70 90 110 Frequency (MHz) Frequency (MHz) Figure 15. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[9] Figure 14. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[9] Notes: 8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz. 1.05 Page 6 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Programmable Drive Strength The SiT8008 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. Improves the downstream clock receiver's (RX) jitter by decreasing (speeding up) the clock rise/fall time. Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The SiT8008 can support up to 60 pF or higher in maximum capacitive loads with drive strength settings. Refer to the Rise/Fall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. SiT8008 Drive Strength Selection Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT8008 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section. 3. Under the capacitive load column, select the desired rise/fall times. EMI Reduction by Slowing Rise/Fall Time Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. trise=0.05 trise=0.1 trise=0.15 trise=0.2 trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 10 Harmonic amplitude (dB) 0 -10 -20 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Any given rise/fall time in Table 7 through 11 dictates the maximum frequency under which the oscillator can operate with guaranteed full output swing over the entire operating temperature range. This max frequency can be calculated as the following: Max Frequency = -30 1 5 x Trf_20/80 -40 -50 where Trf_20/80 is the typical value for 20%-80% rise/fall time. -60 -70 -80 Example 1 1 3 5 7 9 11 Harmonic number Calculate fMAX for the following condition: Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. Vdd = 1.8V (Table 7) Capacitive Load: 30 pF Desired Tr/f time = 3 ns (rise/fall time part number code = E) fMAX = 66.666660 Part number for the above example: SiT8008IE12-18E-66.666660 High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8008 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT8008. 1.05 Drive strength code is inserted here. Default setting is "-" Page 7 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T E U F or "": default 6.16 3.19 2.11 1.65 0.93 0.78 0.70 11.61 6.35 4.31 3.23 1.91 1.66 1.48 22.00 11.00 7.65 5.79 3.32 2.94 2.64 31.27 16.01 10.77 8.18 4.66 4.09 3.68 39.91 21.52 14.47 11.08 6.48 5.74 5.09 L A R B T 4.13 2.11 1.45 1.09 0.62 8.25 4.27 2.81 2.20 1.28 12.82 7.64 5.16 3.88 2.27 21.45 11.20 7.65 5.86 3.51 27.79 14.49 9.88 7.57 4.45 0.65 1.30 2.40 3.35 4.56 E or "": default U F 0.54 0.43 0.34 1.00 0.96 0.88 2.01 1.81 1.64 3.10 2.79 2.54 4.01 3.65 3.32 45 pF 18.74 9.86 6.76 5.20 3.07 2.71 2.40 2.16 60 pF 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD L A R B T 5 pF 3.77 1.94 1.29 0.97 0.55 15 pF 7.54 3.90 2.57 2.00 1.12 30 pF 12.28 7.03 4.72 3.54 2.08 45 pF 19.57 10.24 7.01 5.43 3.22 60 pF 25.27 13.34 9.06 6.93 4.08 E or "": default U F 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 Drive Strength \ CLOAD L A R B T or "": default E U F 5 pF 3.60 1.84 1.22 0.89 0.51 0.38 0.30 0.27 15 pF 7.21 3.71 2.46 1.92 1.00 0.92 0.83 0.76 30 pF 11.97 6.72 4.54 3.39 1.97 1.72 1.55 1.39 Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B 3.39 1.74 1.16 0.81 6.88 3.50 2.33 1.82 11.63 6.38 4.29 3.22 17.56 8.98 6.04 4.52 23.59 12.19 8.34 6.33 T or "": default E U F 0.46 0.33 0.28 0.25 1.00 0.87 0.79 0.72 1.86 1.64 1.46 1.31 2.60 2.30 2.05 1.83 3.84 3.35 2.93 2.61 1.05 Page 8 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Pin 1 Configuration Options (OE, ST, or NC) Pin 1 of the SiT8008 can be factory-programmed to support three modes: Output Enable (OE), standby (ST) or No Connect (NC). These modes can also be programmed with the Time Machine using field programmable devices. Output Enable (OE) Mode In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1 s. Standby (ST) Mode In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The current is reduced to a standby current, typically in the range of a few A. When ST is pulled High, the device goes through the "resume" process, which can take up to 5 ms. No Connect (NC) Mode In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on pin 1. Figure 18. Startup Waveform vs. Vdd (Zoomed-in View of Figure 17) Instant Samples with Time Machine and Field Programmable Oscillators SiTime supports a field programmable version of the SiT8008 low power oscillator for fast prototyping and real time customization of features. The field programmable devices (FP devices) are available for all five standard SiT8008 package sizes and can be configured to one's exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. Customizable Features of the SiT8008 FP Devices Include Table 12 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode. Table 12. OE vs. ST vs. NC OE Active current 20 MHz (max, 1.8V) OE disable current (max. 1.8V) Standby current (typical 1.8V) OE enable time at 77.76 MHz (max) Resume time from standby (max, all frequency) Output driver in OE disable/standby mode 4.1 mA 4 mA ST 4.1 mA NC 4.1 mA N/A N/A 0.6 A N/A 138 ns N/A N/A N/A 5 ms N/A High Z weak pull-down N/A N/A Frequency between 1 MHz to 110 MHz Three frequency stability options, 20 ppm, 25 ppm, 50 ppm Two operating temperatures, -20 to 70C or -40 to 85C Six supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V and 2.25 to 3.63V continuous Output drive strength OE, ST or NC mode For more information regarding SiTime's field programmable solutions, see Time Machine II and Field Programmable Oscillators. SiT8008 is typically factory-programmed per customer ordering codes for volume delivery. Output on Startup and Resume The SiT8008 comes with gated output. Its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. In addition, the SiT8008 features "no runt" pulses and "no glitch" output during startup or resume as shown in the waveform captures in Figure 17 and Figure 18. Figure 17. Startup Waveform vs. Vdd 1.05 Page 9 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Dimensions and Patterns Package Size - Dimensions (Unit: mm)[10] Recommended Land Pattern (Unit: mm) [11] 2.0 x 1.6 x 0.75 mm 2.5 x 2.0 x 0.75 mm 2.5 0.05 #3 #4 1.1 2.0 0.05 #2 #2 1.0 0.5 YXXXX #1 1.9 1.00 #3 1.5 #4 #1 0.75 0.05 0.75 1.1 3.2 x 2.5 x 0.75 mm 3.2 0.05 #3 #4 0.7 1.9 0.9 2.5 0.05 YXXXX #1 2.2 2.1 #3 #2 #1 0.9 0.75 0.05 #2 1.2 #4 1.4 5.0 x 3.2 x 0.75 mm 2.54 5.0 0.05 1.05 #2 #4 #2 #1 2.2 1.1 1.6 #1 0.75 0.05 YXXXX #3 0.8 #3 3.2 0.05 #4 2.39 1.15 1.5 Page 10 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Dimensions and Patterns Package Size - Dimensions (Unit: mm) [10] Recommended Land Pattern (Unit: mm) [11] 7.0 x 5.0 x 0.90 mm 0.90 0.10 2.0 1.1 3.81 2.6 5.0 0.05 YXXXX 5.08 5.08 7.0 0.05 1.4 2.2 Notes: 10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the as sembly location of the device. 11. A capacitor of value 0.1 F or higher between Vdd and GND is required. 1.05 Page 11 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Ordering Information The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator. SiT8008BC-12-18E-66.666660D Part Family Packing Method "D": 8 mm Tape & Reel, 3ku reel "E": 8 mm Tape & Reel, 1ku reel "T": 12/16 mm Tape & Reel, 3ku reel "Y": 12/16 mm Tape & Reel, 1ku reel Blank for Bulk "SiT8008" Revision Letter "B" is the revision Frequency 1.000000 to 110.000000 MHz Temperature Range "C" Commercial, -20C to 70C "I" Industrial, -40C to 85C Feature Pin "E" for Output Enable "S" for Standby "N" for No Connect Output Drive Strength "-" Default (datasheet limits) See Tables 7 to 11 for rise/fall times "L" "A" "R" "B" Supply Voltage "T" "E" "U" "F" "18" for 1.8V 10% "25" for 2.5V 10% "28" for 2.8V 10% "30" for 3.0V 10% "33" for 3.3V 10% "XX" for 2.5V -10% to 3.3V +10% "YY" for 1.8V -10% to 3.3V +10%[12] Package Size "7" "1" "2" "3" "8" Notes: 12. 2.0 x 1.6 mm 2.5 x 2.0 mm 3.2 x 2.5 mm 5.0 x 3.2 mm 7.0 x 5.0 mm Frequency Stability "1" for 20 ppm "2" for 25 ppm "3" for 50 ppm This option is preliminary and meant for sampling and evaluation purposes only. Table 13. Ordering Codes for Supported Tape & Reel Packing Method 1.05 Device Size (mm x mm) 16 mm T&R (3ku) 16 mm T&R (1ku) 12 mm T&R (3ku) 12 mm T&R (1ku) 8 mm T&R (3ku) 8 mm T&R (1ku) 2.0 x 1.6 - - - - D E 2.5 x 2.0 - - - - D E 3.2 x 2.5 - - - - D E 5.0 x 3.2 - - T Y - - 7.0 x 5.0 T Y - - - - Page 12 of 17 www.sitime.com SiT8008B Low Power Programmable Oscillator Table 14. Additional Information Document Description Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer Download Link Field Programmable Oscillators Devices that can be programmable in the field by Time Machine II http://www.sitime.com/products/field-programmable-oscillators Manufacturing Notes Tape & Reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/component/docman/doc_download/243-manufacturing-notesfor-sitime-oscillators Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability Performance Reports Additional performance data such as phase noise, current consumption and jitter for selected frequencies http://www.sitime.com/support/performance-measurement-report Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes Table 15. Revision History Revision Release Date 1.0 06/10/2014 First Production Release Change Summary 1.01 05/07/2015 1.02 06/18/2015 Revised the Electrical Characteristics, Timing Diagrams and Performance Plots Revised 2016 package diagram Added 16 mm T&R information to Table 13 Revised 12 mm T&R information to Table 13 1.03 08/30/2016 Revised part number example in the ordering information 1.04 01/09/2018 Updated logo and company address, other page layout changes Revised 2520 package land pattern 1.05 7/8/2020 Updated ordering information with "YY" supply voltage option Updated ordering information with note SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 (c) SiTime Corporation 2014-2018. The information contained herein is subject to change at any time without notice. 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Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. 1.05 Page 13 of 17 www.sitime.com Silicon MEMS Outperforms Quartz Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. Rev. 1.04 Page 14 of 17 www.sitime.com Silicon MEMS Outperforms Quartz Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime's oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class: Why is SiTime Best in Class: SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability World-class MEMS and CMOS design expertise Internal differential architecture for best common mode noise rejection Electrostatically driven MEMS resonator is more immune to EMS Reliability (Million Hours) SiTime IDT 1,140 38 KYCA EPSN EPSN TXC CW SLAB SiTime 28 Figure 3. Electro Magnetic Susceptibility (EMS) [3] Figure 1. Reliability Comparison[1] Best Power Supply Noise Rejection SiTime's MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. Best Aging Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. Why is SiTime Best in Class: Why is SiTime Best in Class: SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability On-chip regulators and internal differential architecture for common mode noise rejection MEMS resonator is paired with advanced analog CMOS IC SiTime EPSN KYCA Inherently better immunity of electrostatically driven MEMS resonator MEMS vs. Quartz Aging EpiSeal Oscillator SiTimeMEMS Oscillator Quartz QuartzOscillator Oscillator 10 8 Aging ( PPM) 8 6 4 2 3 3.5 Figure 4. Power Supply Noise Rejection[4] 1.5 0 1-Year 10-Year Figure 2. Aging Comparison[2] Rev. 1.04 Page 15 of 17 www.sitime.com Silicon MEMS Outperforms Quartz Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime's oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class: The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz Center-anchored MEMS resonator is the most robust design Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC TXC EPS CW KYCA KYCA SLAB EpiSeal SiTime MEMS 100.0 10.0 1.0 0.1 0.0 10 100 1000 KYCA Vibration Frequency (Hz) Figure 5. Vibration Robustness[5] EPSN TXC CW SLAB SiTime Figure 6. Shock Robustness[6] Figure labels: TXC = TXC Epson = EPSN Connor Winfield = CW Kyocera = KYCA SiLabs = SLAB SiTime = EpiSeal MEMS Rev. 1.04 Page 16 of 17 www.sitime.com Silicon MEMS Outperforms Quartz Notes: 1. Data source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): According to IEC EN61000-4.3 (Electromagnetic compatibility standard) Field strength: 3V/m Radiated signal modulation: AM 1 kHz at 80% depth Carrier frequency scan: 80 MHz - 1 GHz in 1% steps Antenna polarization: Vertical DUT position: Center aligned to antenna Devices used in this test: Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW TXC TXC BB-156.250MBE-T Quartz, 3rd Overtone CW Conner Winfield P123-156.25M Quartz, 3rd Overtone KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL NDK NDK NZ2523SB-25.6M Quartz KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz EPSN Epson SG-310SCF-25M0-MB3 Quartz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: MIL-STD-883F Method 2002 Condition A: half sine wave shock pulse, 500-g, 1ms Continuous frequency measurement in 100 s gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3. 7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com. Rev. 1.04 Page 17 of 17 www.sitime.com