ADVANTECH DRAM Memory Module Portfolio Introduction PAPS Product Management Q3 / 2013 PART I. ADVANTECH QUALIFIED DIMM (AQD) ADVANTECH QUALIFIED DIMM Built to Last --The toughest memory module for rigorous applications QUALITY -3- Advantech Confidential & Internal Use Only RELIABILITY COMPATIBIL ITY LONGEVITY LIFE-TIME WARRANTY Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty Quality Assurance Program Carefully Selected Premium Materials Advantech Confidential - 4 - & Internal Use Only ISO-9000 Manufacturing Process Industrial Testing Standard Quality Assurance 100% Module On Board Testing Advantech Confidential - 5 - & Internal Use Only Rigorous Reliability Tests Cross-Checked Compatibility Vibration Test Longevity Chamber Test Life-Time Warranty Functional Test Quality Assurance Rigorous Reliability Tests Motherboard Team DOA Testing Result CrossChecked Compatibility Longevity Memory Compatibility Testing Result Check & Compare Both Teams Testing Result to Ensure M/B vs. Memory Compatibility Advantech Confidential - 6 - & Internal Use Only Life-Time Warranty Quality Assurance Rigorous Reliability Tests Locked BOM * IC Spec * PCB Layout Advantech Confidential - 7 - & Internal Use Only Cross-Checked Compatibility Longevity Life-Time Warranty Minimum 3 Years Longevity Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty Every ADVATECH QUALIFIED DIMM (AQD) is back up by lifetime warranty. -8- Advantech Confidential & Internal Use Only AQD Product Portfolio Unbuffered DIMM * General IPC Applications * 1GB, 2GB, 4GB & 8GB ECC Unbuffered DIMM * Improve system productivity and efficiency * 4GB & 8GB Registered DIMM * Providing the best solution for capacity and performance requirement. * 8 GB & 16GB Load Reduce DIMM * Providing the biggest capacity per server with the lowest energy costs * 32GB -9- Advantech Confidential & Internal Use Only AQD Products Offering LONG & SHORT Unbuffered DIMM LONG DIMM DDR3-1333 1G LONG DIMM DDR3-1600 2G LONG DIMM DDR3-1600 4G LONG DIMM DDR3-1600 8G AQD-D31GN13-SX AQD-D3L2GN16-SQ AQD-D3L4GN16-SQ AQD-D3L8GN16-SQ SHORT DIMM DDR3-1333 1G SHORT DIMM DDR3-1600 2G AQD-SD31GN13-SX AQD-SD3L2GN16-SQ LONG DIMM DDR3-1600 4G ECC Unbuffered DIMM AQD-D3L4GE16-SG LONG DIMM DDR3-1600 8G Registered DIMM AQD-D3L8GE16-SG SHORT DIMM DDR3-1600 8G AQD-SD3L4GN16-SG AQD-SD3L8GN16-SG Load Reduce DIMM DDR3-1333 32G LONG DIMM DDR3-1600 16GB AQD-D3L32L13-SM AQD-D3L8GRV16-SG Advantech Confidential - 10 - & Internal Use Only LONG DIMM DDR3-1600 8G SHORT DIMM DDR3-1600 4G AQD-D3L16RV16-SM Part Number Decoder A Q D - S 3 2 L TYPE VOLTAGE DM=SDRAM DIMM DR=DDR D2=DDR2 D3=DDR3 SS=SDRAM SODIMM SD=DDR SO-DIMM SD2=DDR2 SODIMM SD3=DDR3 SODIMM Blank= 1.5V L=1.35V U=1.25V PRODUCT NAME A=Advantech Q=Qualified D=DIMM D G CAPACITY 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16 =16GB 32 =32GB 64= 64GB V N ADVNCED FEATURE 1 Height N= V= NON-ECC and NON REGISTER VLP R= REGISTER E= ECC ONLY L=Load reduce 6 - S SPEED FAB VERSION 40=400Mt/s 53=533Mt/s 66=667Mt/s 80=800Mt/s 10=1066Mt/s 13=1333Mt/s 16=1600Mt/s 18=1866Mt/s S=Samsu ng H=Hynix M=Micron /Elpida N=Nanya X=1Gb(128Mx8) T=1Gb(256Mx4) Q=2Gb(256Mx8) Y=2Gb(512Mx4) G=4Gb(512Mx8) Z= 4Gb(1Gbx4) M=8Gb(2Gbx4) Color / Symbol Key Available E LR Advantech Confidential - 11 - & Internal Use Only R ECC Load-Reduce V Registered Very Low-Profile Phasing-out F W G Planning Fully Buffered N New Wide Temperature LV Low-Voltage AQD DDR3 Memory Modules Portfolio DDR3 1.35 Low Voltage 1333 1600 LONG SHORT 2GB (256MX8) AQD-D3L2GN16-SQ AQD-SD3L2GN16SQ 4GB (512MX8) AQD-D3L4GN16-SG AQD-SD3L4GN16SG 8GB (512MX8) AQD-D3L8GN16-SG AQD-SD3L8GN16SG 4GB (512MX8) AQD-D3L4GE16-SG 8GB (512MX8) AQD-D3L8GE16-SG 1GB (128X8) LONG SHORT AQD-D31GN13-SX (1.5V) AQD-SD31GN13-SX (1.5V) U-DIMM ECC U-DIMM 4GB (512MX8) R-DIMM LOAD REDUCE Advantech Confidential - 12 - & Internal Use Only 8GB (512MX8) AQD-D3L8GRV16SG 16GB(2Gbx4) AQD-D3L16RV16SM 32GB (2GbX4) AQD-D3L32L13-SM U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM 1 GB AQD-D31GN16-NX 240PIN, 1333Mt/s, 128Mx8, 1.181" Height, Samsung, 1.5V AQD-D31GN16-HX 2 GB 240PIN, 1333Mt/s, 128Mx8, 1.181" Height, Hynix, 1.5V AQD-D3L2GN16-HQ LV 240PIN, 1600Mt/s, 256Mx8, 1.181" Height, Samsung Chips 1.35V AQD-D3L2GN16-H LV 4GB 240PIN, 1600Mt/s, 256Mx8, 1.181" Height, Hynix Chips 1.35V LV AQD-D3L4GN16-SG 240PIN, 1600Mt/s, 512Mx8, 1.181" Height, Samsung Chips 1.35V AQD-D3L4GN16-HG LV 240PIN, 1600Mt/s, 512Mx8, 1.181" Height, Hynix Chips 1.35V 8 GB AQD-D3L8GN16-SG LV 240PIN, 1600Mt/s, 512Mx8, 1.181" Height, Samsung Chips 1.35V AQD-D3L8GN16-HG LV 240PIN, 1600Mt/s, 512Mx8, 1.181" Height, Hynix Chips 1.35V Q3/2013 Advantech Confidential - 13 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 SO-DIMM 1 GB AQD-SD31GN16-SX 204PIN, 1333Mt/s, 128Mx8, 1.181" Height, Samsung Chips 1.5V AQD-SD31GN16-HX 204PIN, 1333Mt/s, 128Mx8, 1.181" Height, Hynix Chips 1.5V LV 2 GB AQD-SD3L2GN16-SQ 204PIN, 1600Mt/s, 256Mx8, 1.181" Height, Samsung Chips 1.35V AQD-SD3L2GN16-HQ LV 204PIN, 1600Mt/s, 256Mx8, 1.181" Height, Hynix, Chips 1.35V LV 4GB AQD-SD3L4GN16-SG 204PIN, 1600Mt/s, 512Mx8, 1.181" Height, Samsung Chips 1.35V LV AQD-SD3L4GN16-HG 204PIN, 1600s, 512Mx8, 1.181" Height, Hynix Chips 1.35V 8 GB AQD-SD3L8GN16-SG LV 204PIN, 1600Mt/s, 512Mx8, 1.181" Height, Samsung, Chips 1.35V AQD-SD3L8GN16-HG LV 204PIN, 1600Mt/s, 512Mx8, 1.181" Height, Hynix, Chips 1.35V Q3/2013 Advantech Confidential - 14 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM Advance Feature ECC 4GB AQD-D3L4GE16-SG LV E 240 PIN, 1600Mt/s, 512 Mx8,1R 1.181" Height, Samsung, 1.35V E AQD-D3L4GE16-HG LV 240 PIN, 1600Mt/s, 512 Mx8,1R 1.181" Height, Hynix, 1.35V E 8 GB AQD-D3L8GE16-SG LV 240PIN, 1600Mt/s, 512Mx8,2R 1.181" Height, Samsung, 1.35V AQD-D3L8GE16-HG E LV 240PIN, 1600Mt/s, 512Mx8,2R 1.181" Height, Hynix, 1.35V Q3/2013 Advantech Confidential - 15 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 SO DIMM Advance Feature 4GB ECC AQD-SD3L4GE16-SG R LV 240 PIN, 1600Mt/s, 512 Mx8, 1R 1.181" Height, Samsung, 1.35V AQD-SD3L4GE16-HG R LV 240 PIN, 1600Mt/s, 512 Mx8, 1R 1.181" Height, Hynix, 1.35V 8 GB AQD-SD3L8GE16-SG R LV 240PIN, 1600Mt/s, 512Mx8, 2R 1.181" Height, Samsung, 1.35V AQD-SD3L8GE16-HG R LV 240PIN, 1600Mt/s, 512Mx8, 2R 1.181" Height, Hynix, 1.35V Q3/2013 Advantech Confidential - 16 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM Advance Feature ECC and Registered 8 GB AQD-D3L8GRV16-SG R LV V 240PIN, 1600 Mt/s, 512 Mx8 2R, VLP 0.74" Height, Samsung Chips 1.35V AQD-D3L8GRV16-HG R LV V 240PIN, 1600 Mt/s, 512 Mx8 2R, VLP 0.74" Height, Hynix Chips 1.35V R 16 GB AQD-D3L16RV16-SM LV V 240PIN, 1600 Mt/s, 2Gx4 2R, 0.74" Height, Samsung, Chips 1.35V R AQD-DL316R16-HM LV 240PIN, 1600 Mt/s, 2Gx4 2R, VLP 0.74" Height, Hynix, Chips 1.35V Q3/2013 Advantech Confidential - 17 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 V U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM Advance Feature Load Reduce 32 GB AQD-D332L13-SM LR 240PIN, 1333 Mt/s, 2Gbx4 ,4R, 1.810" Height, Samsung, Chips 1.5V Q3/2013 Advantech Confidential - 18 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 Advantech Confidential - 19 - & Internal Use Only Part Number Decoder 9 6 - D M M Memory Type 6 4 M 1 0 Capacity DM=SDRAM DIMM DR=DDR DRI=INDUSTRIAL GRADE DDR D2=DDR2 D2I=INDUSTRIAL GRADE DDR2 D3=DDR3 SS=SDRAM SO-DIMM SD=DDR SO-DIMM SDI=INDUSTRIAL GRADE SO-DDR SD2=DDR2 SO-DIMM SD2I=INDUSRIAL GRADE SO-DDR2 SD3=DDR3 SO-DIMM SD3I=INDUSTRIAL GRADE SO-DDR3 64M=64MB 128M=128MB 256M=256MB 512M=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB 0 N Speed N Advance Feature 100=100Mb/s 133=133Mb/s 266=266Mb/s 333=333Mb/s 400=400Mb/s 533=533Mb/s 667=667Mb/s 800=800Mb/s 1066=1066Mb/s 1333=1333Mbs NN= NON-ECC and NONREGISTER ER= ECC AND REGISTER E= ECC ONLY Color / Symbol Key Available E L Advantech Confidential - 20 - & Internal Use Only ECC Low-Profile R Registered V Phasing-out F Very Low-Profile Planning Fully Buffered W N New Wide Temperature - A P Manufacturer AP=APACER ATL=ATP DA=DATA IK=INNODISK KI=KINGSTON MI=MIRCON SB=SWISSBIT TR=TRANSCEND VI=VIRTIUM 512 MB 256 MB 128 MB 64 MB SDRAM DIMM 96DM-64M133NN-TR1 L Transcend, 168PIN, 133Mb/s, 8Mx16, 0.905" Height, Samsung Chips 96DM-128M133NN-TR Transcend, 168PIN, 133Mb/s, 8Mx16, 1.250" Height, Samsung Chips 96DM-256M133NN-TR Transcend, 168PIN, 133Mb/s, 32Mx8, 1.150" Height, Samsung Chips 96DM-512M133NN-TR Transcend, 168PIN, 133Mb/s, 32Mx8, 1.150" Height, Samsung Chips Q3/2013 Advantech Confidential - 21 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 128 MB 64 MB SDRAM SO-DIMM 96SS-64M133NN-TR L Transcend, 144PIN, 133Mb/s, 8Mx16, 0.945" Height, Samsung Chips 96SS-128M133NN-TR Transcend, 144PIN, 133Mb/s, 8Mx16, 1.150" Height, Samsung Chips 96SS-128M133NN-TR1 L Transcend, 144PIN, 133Mb/s, 16Mx16, 0.945" Height, Samsung Chips 256 MB 96SS-256M133NN-TR Transcend, 144PIN, 133Mb/s, 16Mx16, 1.250" Height, Samsung Chips 96SS-256M133NN-TR3 Transcend, 144PIN, 133Mb/s, 32Mx8, 1.150" Height, Samsung Chips Q3/2013 Advantech Confidential - 22 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR DIMM 256 MB 96DR-256M333NN-TR Transcend, 184PIN, 333Mb/s, 32Mx8, 1.200" Height, Samsung Chips 96DR-256M333NN-AP2 Apacer, 184PIN, 333Mb/s, 32Mx8, 1.160" Height, Samsung Chips 96DR-256M400NN-TR Transcend, 184PIN, 400Mb/s, 32Mx8, 1.160" Height, Samsung Chips 96DR-512M333NN-TR 512 MB Transcend, 184PIN, 333Mb/s, 32Mx8, 1.250" Height, Samsung Chips 96DR-512M333NN-AP2 Apacer, 184PIN, 333Mb/s, 32Mx8, 1.160" Height, Samsung Chips 96DR-512M400NN-TR1 Transcend, 184PIN, 400Mb/s, 64Mx8, 1.160" Height, Samsung Chips 96DR-512M400NN-AP2 Apacer, 184PIN, 400Mb/s, 64Mx8, 1.160" Height, Samsung Chips 1 GB 96DR-1G400NN-TR1 Transcend, 184PIN, 400Mb/s, 64Mx8, 1.250" Height, Samsung Chips 96DR-1G400NN-AP Apacer, 184PIN, 400Mb/s, 64Mx8, 1.160" Height, Samsung Chips Q3/2013 Advantech Confidential - 23 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR DIMM Advance Feature 512 MB ECC 96DR-512M266E-TR E Transcend, 184PIN, 266Mb/s, 32Mx8, 1.250" Height, Samsung Chips 1 GB 512 MB ECC and Registered 96DR-512M333ER-AP E R Apacer 184PIN, 333Mb/s, 64Mx8, 1.200" Height, Samsung Chips 96DR-1G333ER-AP1 E R Apacer 184PIN, 333Mb/s, 64Mx8, 1.200" Height, Samsung Chips Q3/2013 Advantech Confidential - 24 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 128 MB DDR SO-DIMM 96SD-128M266NN-TR Transcend, 200PIN, 266Mb/s, 16Mx16, 1.250" Height, Samsung Chips 96SD-128M333NN-TR Transcend, 200PIN, 333Mb/s, 16Mx16, 1.250" Height, Samsung Chips 256 MB 96SD-256M266NN-TR Transcend, 200PIN, 266Mb/s, 32Mx8, 1.250" Height, Samsung Chips 96SD-256M333NN-TR1 Transcend, 200PIN, 333Mb/s, 32Mx8, 1.250" Height, Samsung Chips 96SD-256M400NN-TR 512 MB Transcend, 200PIN, 400Mb/s, 32Mx8, 1.250" Height, Samsung Chips 96SD-512M266NN-TR2 Transcend, 200PIN, 266Mb/s, 64Mx8, 1.250" Height, Samsung Chips 96SD-512M400NN-TR Transcend, 200PIN, 400Mb/s, 64Mx8, 1.250" Height, Samsung Chips 96SD-1G333NN-TR Transcend, 200PIN, 333Mb/s, 64Mx8, 1.250" Height, Samsung Chips 1 GB 96SD-1G333NN-AP Apacer, 200PIN, 400Mb/s, 64Mx8, 1.250" Height, Samsung Chips 96SD-1G400NN-TR Transcend, 200PIN, 400Mb/s, 64Mx8, 1.250" Height, Samsung Chips 96SD-1G400NN-AP1 Apacer, 200PIN, 400Mb/s, 64Mx8, 1.250" Height, Samsung Chips Q3/2013 Advantech Confidential - 25 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 512 MB DDR2 DIMM 96D2-512M400NN-TR Transcend, 240PIN, 400Mb/s, 64Mx8, 0.720" Height, Samsung Chips 96D2-512M667NN-TRL V Transcend, 240PIN, 667Mb/s, 64Mx8, 0.720" Height, Samsung Chips 96D2-1G533NN-TR1 Transcend, 240PIN, 533Mb/s, 64Mx8, 0.720" Height, Samsung Chips 1 GB 96D2-1G667NN-TRL V Transcend, 240PIN, 667Mb/s, 64Mx8, 0.720" Height, Samsung Chips 96D2-1G800NN-TRL1 V Transcend, 240PIN, 800Mb/s, 128Mx8, 0.720" Height, Samsung Chips 96D2-1G800NN-AP3 Apacer, 240PIN, 800Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96D2-2G800NN-KI Kingston, 240PIN, 800Mb/s, 128Mx8, 1.181" Height, Kingston Chips 96D2-2G667NN-TRL V 2 GB Transcend, 240PIN, 667Mb/s, 128Mx8, 0.720" Height, Samsung Chips 96D2-2G667-AP Apacer, 240PIN, 667Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96D2-2G800NN-TRL1 V Transcend, 240PIN, 800Mb/s, 128Mx8, 0.720" Height, Samsung Chips 96D2-2G800NN-AP Apacer, 240PIN, 800Mb/s, 128Mx8, 1.181" Height, Samsung Chips Q3/2013 Advantech Confidential - 26 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR2 DIMM Advance Feature 1 GB ECC 96D2-1G533E-TR Transcend, 240PIN, 533Mb/s, 64Mx8, 1.181" Height, Samsung Chips 96D2-2G800E-AP1 2 GB E E Apacer, 240PIN, 800Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96D2-2G800E-TR1 E Transcend, 240PIN, 800Mb/s, 128Mx8, 1.181" Height, Samsung Chips 4 GB 2 GB 1 GB ECC and Registered 96D2-1G400ER-TR E R Transcend, 240PIN, 400Mb/s, 64Mx8, 1.181" Height, Samsung Chips 96D2-2G667ER-TR E R Transcend, 240PIN, 667Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96D2-4G667ER-TR1 E R Transcend, 240PIN, 667Mb/s, 256Mx4, 1.181" Height, Samsung Chips Q3/2013 Advantech Confidential - 27 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR2 DIMM Advance Feature 4 GB 2 GB 1 GB Fully Buffered 96D2-1G667FB-TR F Transcend, 240PIN, 667Mb/s, 64Mx8, 1.200" Height, Samsung Chips 96D2-2G667FB-TR1 F Transcend, 240PIN, 667Mb/s, 128Mx8, 1.200" Height, Samsung Chips 96D2-4G667FB-TR F Transcend, 240PIN, 667Mb/s, 256Mx4, 1.200" Height, Samsung Chips Q3/2013 Advantech Confidential - 28 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 512 MB DDR2 SO-DIMM 96SD2-512M533NN-AP Apacer, 200PIN, 533Mb/s, 64Mx8, 1.181" Height, Samsung Chips 96SD2-512M667NN-TR Transcend, 200PIN, 667Mb/s, 64Mx8, 1.181" Height, Samsung Chips 96SD2-1G533NN-TR1 Transcend, 200PIN, 533Mb/s, 64Mx8, 1.181" Height, Samsung Chips 96SD2-1G667NN-TR 1 GB Transcend, 200PIN, 667Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96SD2-1G800NN-TR1 Transcend, 200PIN, 800Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96SD2-1G800NN-AP2 Apacer, 200PIN, 800Mb/s, 128Mx8, 1.181" Height, Hynix Chips 96SD2-1G800NN-AP3 Apacer, 200PIN, 800Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96SD2-2G667NN-TR1 2 GB Transcend, 200PIN, 667Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96SD2-2G800NN-TR1 Transcend, 200PIN, 800Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96SD2-2G800NN-AP2 Apacer, 200PIN, 800Mb/s, 128Mx8, 1.181" Height, Samsung Chips Q3/2013 Advantech Confidential - 29 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 2 GB 1 GB DDR2 SO-DIMM Wide Temp. 96SD2I-1G667NN-AP4 W Apacer, 200PIN, 667Mb/s, 128Mx8, 1.181" Height, Micron Chips, -40-85C 96SD2I-2G667NN-AP1 W Apacer, 200PIN, 667Mb/s, 128Mx8, 1.181" Height, Micron Chips, -40-85C Q3/2013 Advantech Confidential - 30 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 DIMM 1 GB 96D3-1G1333NN-TR1 Transcend, 240PIN, 1333Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96D3-1G1333NN-AP1 Apacer, 240PIN, 1333Mb/s, 128Mx8, 1.181" Height, Hynix Chips 96D3-2G1066NN-TR Transcend, 240PIN, 1066Mb/s, 128Mx8, 1.181" Height, Samsung Chips EOL:7/9/13 96D3-2G1333NN-TR2 Transcend, 240PIN, 1333Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96D3-2G1333NN-AP4 Apacer, 240PIN, 1333Mb/s, 128Mx8, 1.181" Height, Hynix Chips 2 GB 96D3-2G1333NN-TR1 Transcend, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96D3-2G1333NN-AP1 Apacer, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96D3-2G1600NN-APL V Apacer, 240PIN, 1600Mb/s, 256Mx8, 0.740" Height, Hynix Chips 96D3-2G1600NN-TR Transcend, 240PIN, 1600Mb/s, 256Mx8, 1.181" Height, MICRON Chips 96D3-2G1600NN-TRL V Transcend, 240PIN, 1600Mb/s, 256Mx8, 0.74" Height, Samsung Chips Q3/2013 Advantech Confidential - 31 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 DIMM 96D3-4G1333NN-TR Transcend, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96D3-4G1333NN-AP 4 GB Apacer, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96D3-4G1600NN-APL V Apacer, 240PIN, 1600Mb/s, 256Mx8, 0.740" Height, Hynix Chips 96D3-4G1600NN-TR Transcend, 240PIN, 1600Mb/s, 256Mx8, 1.181" Height, Micron Chips EOL:7/9/2013 96D3-4G1600NN-TR Transcend, 240PIN, 1600Mb/s, 256Mx8, 1.181" Height, Samsung Chips 96D3-8G1333NN-APL V 8 GB Apacer, 240PIN, 1333Mb/s, 512Mx8, 0.740" Height, Micron Chips 96D3-8G1600NN-APL V Apacer, 240PIN, 1600Mb/s, 512Mx8, 0.740" Height, Micron Chips 96D3-8G1600NN-TR Transcend, 240PIN, 1600Mb/s, 512Mx8, 1.181" Height, Micron Chips Q3/2013 Advantech Confidential - 32 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 DIMM Advance Feature 1 GB ECC 96D3-1G1333E-AP1 Apacer, 240PIN, 1333Mb/s, 128Mx8, 1.181" Height, Hynix Chips 96D3-2G1333E-AT 2 GB E E Apacer, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Samsung Chips 96D3-2G1333E-AP2 E Apacer, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 4 GB 96D3-4G1333E-AP E Apacer, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96D3-4G1333E-AT E Apacer, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Samsung Chips 96D3-8G1333E-AT E 8 GB Apacer, 240PIN, 1333Mb/s, 512Mx8, 1.181" Height, Samsung Chips 96D3-8G1333E-TR E Transcend, 240PIN, 1333Mb/s, 512Mx8, 1.181" Height, Micron Chips 96D3-8G1600E-APL E V Apacer, 240PIN, 1600Mb/s, 512Mx8, 0.74" Height, Micron Chips Q3/2013 Advantech Confidential - 33 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 DIMM Advance Feature 1 GB ECC and Registered 96D3-1G1333ER-AP1 R Apacer, 240PIN, 1333Mb/s, 128Mx8, 1.181" Height, Hynix Chips 96D3-2G1333ER-AP1 2 GB E E R Apacer, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96D3-2G1333ER-AT E R V Apacer, 240PIN, 1333Mb/s, 128Mx8, 0.74" Height, Samsung Chips 96D3-4G1333ER-AP1 E R Apacer, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96D3-4G1333ER-AT E R 4 GB Apacer, 240PIN, 1333Mb/s, 256Mx4, 1.181" Height, Samsung Chips 96D3-4G1333ER-ATL E V R Apacer, 240PIN, 1333Mb/s, 256Mx8, 0.74" Height, Samsung Chips 96D3-4G1600ER-TRL1 E R V Transcend, 240PIN, 1600Mb/s, 256Mx8, 0.74" Height, Samsung Chips 96D3-4G1600ER-AT E R Apacer, 240PIN, 1600Mb/s, 256Mx8, 1.181" Height, Samsung Chips Q3/2013 Advantech Confidential - 34 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 DIMM Advance Feature ECC and Registered 96D3-8G1333ER-TR E R Transcend, 240PIN, 1333Mb/s, 256Mx8, 1.181" Height, Samsung Chips 8 GB 96D3-8G1333ER-TRL E R V Transcend, 240PIN, 1333Mb/s, 512Mx8, 0.740" Height, MICRON Chips 96D3-8G1600ER-TRL E R V Transcend, 240PIN, 1600Mb/s, 512Mx8, 0.740" Height, MICRON Chips 96D3-8G1066ER-AT E R 16 GB Apacer, 240PIN, 1066Mb/s, 256Mx8, 1.181" Height, Samsung Chips 96D3-16G1600ER-TRL E R V Transcend, 240PIN, 1600Mb/s, 2Gx4, 0.740" Height, Samsung Chips Q3/2013 Advantech Confidential - 35 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 SO-DIMM 1 GB 96SD3-1G1333NN-TR1 Transcend, 204PIN, 1333Mb/s, 128Mx8, 1.181" Height, Samsung Chips 96SD3-1G1333NN-AP1 Apacer, 204PIN, 1333Mb/s, 128Mx8, 1.181" Height, Hynix Chips 96SD3-2G1333NN-TR2 2 GB Transcend, 204PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96SD3-2G1333NN-AP2 Apacer, 204PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96SD3-2G1600NN-AP Apacer, 204PIN, 1600Mb/s, 256Mx8, 1.181" Height, Hynix Chips Q3/2013 Advantech Confidential - 36 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 SO-DIMM 96SD3-4G1066NN-AP Apacer, 204PIN, 1066Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96SD3-4G1333NN-TR1 4 GB Transcend, 204PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96SD3-4G1333NN-AP1 Apacer, 204PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96SD3-4G1600NN-TR Transcend, 204PIN, 1600Mb/s, 256Mx8, 1.181" Height, Micron Chips 96SD3-4G1600NN-AP Apacer, 204PIN, 1600Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96SD3-8G1333NN-TR Transcend, 204PIN, 1333Mb/s, 512Mx8, 1.181" Height, Micron Chips 8 GB 96SD3-8G1600NN-TR Transcend, 204PIN, 1600Mb/s, 512Mx8, 1.181" Height, Micron Chips 96SD3-8G1600NN-AP Apacer, 204PIN, 1600Mb/s, 512Mx8, 1.181" Height, HYNIX Chips 96SD3-8G1600NN-AT Apacer, 204PIN, 1600Mb/s, 512Mx8, 1.181" Height, Samsung Chips Q3/2013 Advantech Confidential - 37 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 SO-DIMM 2 GB Advance Feature - ECC 96SD3-2G1333E-AP Apacer, 204PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96SD3-4G1066E-AP 4 GB E E Apacer, 204PIN, 1066Mb/s, 256Mx8, 1.181" Height, Hynix Chips 96SD3-4G1333E-TR E Transcend, 204PIN, 1333Mb/s, 256Mx8, 1.181" Height, Hynix Chips 8 GB 96SD3-8G1333E-TR E Transcend, 204PIN, 1333Mb/s, 512Mx8, 1.181" Height, Samsung Chips Q3/2013 Advantech Confidential - 38 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 DDR3 SO-DIMM 2 GB Low Voltage. 96SD3L-2G1600NN-TR Transcend, 204PIN, 1600Mb/s, 256Mx8, 1.35V, 1.181" Height, Samsung Chips EOL:7/9/2013 4 GB 96SD3L-4G1333NN-AP Apacer, 204PIN, 1333Mb/s, 512Mx8, 1.35V, 1.181" Height, MICRO Chips 96SD3L-4G1600NN-TR Transcend, 204PIN, 1600Mb/s, 512Mx8, 1.35V, 1.181" Height, SAMSUNG Chips EOL:7/9/2013 8 GB 96SD3L-8G1333NN-AP Apacer, 204PIN, 1333Mb/s, 512Mx8,1.35V, 1.181" Height, MICRO Chips 96SD3L-8G1600NN-TR Transcend, 204PIN, 1600Mb/s, 512Mx8, 1.35V, 1.181" Height, SAMSUNG Chips EOL:7/9/2013 Q3/2013 Advantech Confidential - 39 - & Internal Use Only Q4/2013 Q1/2014 Q2/2014 Memory EOL Procedure For support and product management optimization, PAPS will follow the Memory phase-out procedure as below. 1 Month 2 Month Official EOL Announcement Last Time Buy Order Replacement and Evaluation Approval Advantech Confidential - 40 - & Internal Use Only EOL Thank you Advantech Confidential - 41 - & Internal Use Only