CoolSET® - Q1
ICE2QR2280G
Off-Line SMPS Quasi-Resonant
PWM Controller with integrated
800V Startup Cell/Depletion
CoolMOS® In DSO
Never stop thinking.
Power Management & Supply
Datasheet,Version 2.0, June 7, 2010
Edition 2010-06-07
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 6/7/10.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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CoolSET® - Q1
ICE2QR2280G
Revision History: June 7, 2010 Datasheet
Previous Version:
Type Package Marking VDS RDSon
1)
1) typ @ T=25°C
230VAC ±15%2)
2) Calculated maximum input power rating at Ta=50°C, Ti=125°C and with 232mm^2, 2 OZ copper area on Drain pin as heat sink.
85-265 VAC2)
ICE2QR2280G PG-DSO-12 ICE2QR2280G 800V 2.26 53W 30W
CoolSET® - Q1
ICE2QR2280G
Version 2.0 3 June 7, 2010
Off-Line SMPS Quasi-Resonant PWM controller with
integrated 800V Startup Cell/Depletion CoolMOS® In
DSO
PG-DSO-12
Description
The CoolSET®-Q1 series (ICE2QRxx80G) is the first
generation of quasi-resonant integarted power ICs. It is
optimized for off-line switch mode power supply
applications such as LCD monitor, DVD R/W, DVD
Combo, Blue-ray DVD, set top box, etc. Operting the
MOSFET switch in quasi-resonant mode, lower EMI,
higher efficiency and lower voltage stress on secondary
diodes are expected for the SMPS. Based on the
BiCMOS technology, the CoolSET®-Q1 series has a
wide operation range (up to 25V) of IC power supply
and lower power consumption. It also offers many
advantages such as: a quasi-resonant operation till very
low load increasing the average system efficiency
compared to other conventional solutions; the Active
Burst Mode operation enables an ultra-low power
consumption at standby mode with small and
controllable output voltage ripple.
Product Highlights
• Quasi resonant operation
• Active Burst Mode to reach the lowest standby power requirement
<100mW@no load
• Digital frequency reduction for better overall system efficiency
• Integrated 800V startup cell
Features
• 800V avalanche rugged CoolMOS® with built-in
startup cell
• Quasiresonant operation till very low load
• Active burst mode operation for low standby input
power (< 0.1W)
• Digital frequency reduction with decreasing load for
reduced switching loss
• Built-in digital soft-start
• Foldback point correction and cycle-by-cycle peak
current limitation
• Maximum on/off time limitation
• Auto restart mode for VCC Overvoltage and
Undervoltage protections
• Auto restart mode for overload protection
• Auto restart mode for overtemperature protection
• Latch-off mode for adjustable output overvoltage
protection and transformer short-winding protection
85 ~ 265 VAC
Snubber
Cbus
Dr1~Dr4
RCS
TL431
Optocoupler
Rb1
Rb2
Rc1
Cc1 Cc2
Rovs2
Rovs1
CVCC
DVCC
DO
CO
LfCfVO
CPS
Startup Cell
CoolSET®-Q1
Depl. CoolMOS®
Power Cell
Wp
Ws
Wa
RVCC
CZC RZC2 RZC1
Drain
Zero Crossing Block
Power Management
Cycle-by-Cycle
current limitation
Active Burst Mode
PWM controller
Current Mode Control
Protections
VCC
CS
Control Unit
ZC
FB
GND
CoolSET® - Q1
ICE2QR2280G
Table of Contents Page
Version 2.0 4 June 7, 2010
1 Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Pin Configuration with PG-DSO-12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Package PG-DSO-12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.3 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2 Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
3 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3.1 VCC Pre-Charging and Typical VCC Voltage During Start-up . . . . . . . . . . .7
3.2 Soft-start . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3.3 Normal Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3.3.1 Digital Frequency Reduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3.3.1.1 Up/down counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.3.1.2 Zero crossing (ZC counter) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.3.1.3 Ringing suppression time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.3.2 Switch Off Determination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.4.1 Foldback Point Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.5 Active Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.5.1 Entering Active Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.5.2 During Active Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.5.3 Leaving Active Burst Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.6 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
4.2 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
4.3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
4.3.1 Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
4.3.2 Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
4.3.3 PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
4.3.4 Current Sense . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
4.3.5 Soft Start . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
4.3.6 Foldback Point Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
4.3.7 Digital Zero Crossing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
4.3.8 Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
4.3.9 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
4.3.10 CoolMOS® Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
5 Typical CoolMOS® Performance Characteristic . . . . . . . . . . . . . . . . . . .17
6 Input Power Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
7 Outline dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Version 2.0 5 June 7, 2010
CoolSET® - Q1
ICE2QR2280G
Pin Configuration and Functionality
1 Pin Configuration and Functionality
1.1 Pin Configuration with PG-DSO-
12/10
1.2 Package PG-DSO-12
Figure 1 Pin Configuration PG-DSO-12 (top view)
Note: Pin 5, 6, 7, and 8 are shorted within the
package.
1.3 Pin Functionality
ZC (Zero Crossing)
At this pin, the voltage from the auxiliary winding after
a time delay circuit is applied. Internally, this pin is
connected to the zero-crossing detector for switch-on
determination. Additionally, the output overvoltage
detection is realized by comparing the voltage Vzc with
an internal preset threshold.
FB (Feedback)
Normally, an external capacitor is connected to this pin
for a smooth voltage VFB. Internally, this pin is
connected to the PWM signal generator for switch-off
determination (together with the current sensing
signal), the digital signal processing for the frequency
reduction with decreasing load during normal
operation, and the Active Burst Mode controller for
entering Active Burst Mode operation determination
and burst ratio control during Active Burst Mode
operation. Additionally, the open-loop / over-load
protection is implemented by monitoring the voltage at
this pin.
CS (Current Sense)
This pin is connected to the shunt resistor for the
primary current sensing, externally, and the PWM
signal generator for switch-off determination (together
with the feedback voltage), internally. Moreover, short-
winding protection is realised by monitoring the voltage
Vcs during on-time of the main power switch.
Drain (Drain of integrated Depl. CoolMOS®)
Drain pin is the connection to the drain of the internal
Depl. CoolMOS®.
VCC (Power supply)
VCC pin is the positive supply of the IC. The operating
range is between VVCCoff and VVCCOVP.
GND (Ground)
This is the common ground of the controller.
Pin Symbol Function
1ZC Zero crossing
2FB Feedback
3N.C. Not Connected
4CS Current Sense
5Drain 800V Depl. CoolMOS™ Drain
6Drain 800V Depl. CoolMOS™ Drain
7Drain 800V Depl. CoolMOS™ Drain
8Drain 800V Depl. CoolMOS™ Drain
9N.C. Not Connected
10 N.C. Not Connected
11 VCC Controller Supply Voltage
12 GND Controller Ground
10
11
12
9
VCCFB
NC
CS
ZC
N.C
GND
N.C.
Drain
Drain
8
7
3
2
1
4
Drain
Drain
5
6
CoolSET® - Q1
ICE2QR2280G
Representative Blockdiagram
Version 2.0 6 June 7, 2010
2 Representative Blockdiagram
Figure 2 Representative Block diagram
1
G2
1
G7
R
SQ
latched
Protect
R
SQ
Autorestart
Protect
Protection
RFB
1
G3
25kO
2pF
D1 &
G1
&
G5
1
G4
tBEB
&
G6
Active Burst Block
FB
C8
VFBEB
C9
VFBBOn
C10
VFBBOff
C3
VZCRS
C2
VZCOVP
Delay
tZCOVP
fsB
OSC
Active
Burst Mode
tCOUNT
C1
VZCC
ZC
Up/down counter
ZC counter
clk
Comparator
Soft-start
Ringing
Suppression
Count=7
VREF
R
S
Q
G8
&
G9
Startup Cell
Drain
CS
VCC
Gate
Drive
GPWM
PWM OP
Current Mode
PWM
Comparator
VPWM
q
Voltage
Reference
Undervoltage Lockout
18V
10.5
10us
Internal
Bias
Power Management
Depl. CoolMOS®
TOnMax
C7
VFBZL
C6
VFBZH
C5
VFBR1
C4
VFBOLP
tOLP_B
Regulation
Current Limiting
10kO
D2
Leading
Edge
Blanking
tLEB 1pF
Foldback
Correction
Delay
tCSSW
C13 VCSB
C14 VCSSW
C15
PWM Control
Zero Crossing
Gate Driver
GND
en
C12
VVCCOVP
TOffMax
OTP
Version 2.0 7 June 7, 2010
CoolSET® - Q1
ICE2QR2280G
Functional Description
3 Functional Description
3.1 VCC Pre-Charging and Typical
VCC Voltage During Start-up
In ICE2QR2280G, a startup cell is integrated into the
depletion CoolMOS®. As shown in Figure 2, the start
cell consists of a high voltage device and a controller,
whereby the high voltage device is controlled by the
controller. The startup cell provides a pre-charging of
the VCC capacitor till VCC voltage reaches the VCC
turned-on threshold VVCCon and the IC begins to
operate.
Once the mains input voltage is applied, a rectified
voltage shows across the capacitor Cbus. The high
voltage device provides a current to charge the VCC
capacitor Cvcc. Before the VCC voltage reaches a
certain value, the amplitude of the current through the
high voltage device is only determined by its channel
resistance and can be as high as several mA. After the
VCC voltage is high enough, the controller controls the
high voltage device so that a constant current around
1mA is provided to charge the VCC capacitor further,
until the VCC voltage exceeds the turned-on threshold
VVCCon. As shown as the time phase I inFigure 3, the
VCC voltage increase near linearly and the charging
speed is independent of the mains voltage level.
Figure 3 VCC voltage at start up
The time taking for the VCC pre-charging can then be
approximately calculated as:
[1]
where IVCCcharge2 is the charging current from the
startup cell which is 1.05mA, typically.
Exceeds the VCC voltage the turned-on threshold
VVCCon of at time t1, the startup cell is switched off, and
the IC begins to operate with a soft-start. Due to power
consumption of the IC and the fact that still no energy
from the auxiliary winding to charge the VCC capacitor
before the output voltage is built up, the VCC voltage
drops (Phase II). Once the output voltage is high
enough, the VCC capacitor receives then energy from
the auxiliary winding from the time point t2 on. The VCC
then will reach a constant value depending on output
load.
3.2 Soft-start
As shown in Figure 4, at the time ton, the IC begins to
operate with a soft-start. By this soft-start the switching
stresses for the switch, diode and transformer are
minimised. The soft-start implemented in
ICE2QR2280G is a digital time-based function. The
preset soft-start time is 12ms with 4 steps. If not limited
by other functions, the peak voltage on CS pin will
increase step by step from 0.32V to 1V finally.
Figure 4 Maximum current sense voltage during
softstart
3.3 Normal Operation
The PWM controller during normal operation consists
of a digital signal processing circuit including an up/
down counter, a zero-crossing counter (ZC counter)
and a comparator, and an analog circuit including a
current measurement unit and a comparator. The
switch-on and -off time points are each determined by
the digital circuit and the analog circuit, respectively. As
input information for the switch-on determination, the
zero-crossing input signal and the value of the up/down
counter are needed, while the feedback signal VFB and
the current sensing signal VCS are necessary for the
switch-off determination. Details about the full
operation of the PWM controller in normal operation
are illustrated in the following paragraphs.
3.3.1 Digital Frequency Reduction
As mentioned above, the digital signal processing
circuit consists of an up/down counter, a ZC counter
and a comparator. These three parts are key to
implement digital frequency reduction with decreasing
load. In addition, a ringing suppression time controller
is implemented to avoid mistriggering by the high
frequency oscillation, when the output voltage is very
low under conditions such as soft start or output short
circuit . Functionality of these parts is described as in
the following.
VVCCon
VVCC
VVCCoff
t1 t
t2
iiiiii
t1
VVCCon Cvcc
⋅
IVCCch e2arg
------------------------------------------
=
ton 36912
0.32
0.49
0.66
0.83
1.00
Vcs_sst
(V)
Time(ms)
CoolSET® - Q1
ICE2QR2280G
Functional Description
Version 2.0 8 June 7, 2010
3.3.1.1 Up/down counter
The up/down counter stores the number of the zero
crossing to be ignored before the main power switch is
switched on after demagnetisation of the transformer.
This value is fixed according to the feedback voltage,
VFB, which contains information about the output
power. Indeed, in a typical peak current mode control,
a high output power results in a high feedback voltage,
and a low output power leads to a low regulation
voltage. Hence, according to VFB, the value in the up/
down counter is changed to vary the power MOSFET
off-time according to the output power. In the following,
the variation of the up/down counter value according to
the feedback voltage is explained.
The feedback voltage VFB is internally compared with
three threshold voltages VRL, VRH and VRM, at each
clock period of 48ms. The up/down counter counts then
upward, keep unchanged or count downward, as
shown in Table 1.
Table 1 Operation of the up/down counter
In the ICE2QR2280G, the number of zero crossing is
limited to 7. Therefore, the counter varies between 1
and 7, and any attempt beyond this range is ignored.
When VFB exceeds VFBR1 voltage, the up/down counter
is initialised to 1, in order to allow the system to react
rapidly to a sudden load increase. The up/down
counter value is also intialised to 1 at the start-up, to
ensure an efficient maximum load start up. Figure 5
shows some examples on how up/down counter is
changed according to the feedback voltage over time.
The use of two different thresholds VFBZL and VFBZH to
count upward or downward is to prevent frequency
jittereing when the feedback voltage is close to the
threshold point. However, for a stable operation, these
two thresholds must not be affected by the foldback
current limitation (see Section 3.4.1), which limits the
VCS voltage. Hence, to prevent such situation, the
threshold voltages, VFBZL and VFBZH, are changed
internally depending on the line voltage levels.
Figure 5 Up/down counter operation
3.3.1.2 Zero crossing (ZC counter)
In the system, the voltage from the auxiliary winding is
applied to the zero-crossing pin through a RC network,
which provides a time delay to the voltage from the
auxiliary winding. Internally, this pin is connected to a
clamping network, a zero-crossing detector, an output
overvoltage detector and a ringing suppression time
controller.
During on-state of the power switch a negative voltage
applies to the ZC pin. Through the internal clamping
network, the voltage at the pin is clamped to certain
level.
The ZC counter has a minimum value of 0 and
maximum value of 7. After the internal MOSFET is
turned off, every time when the falling voltage ramp of
on ZC pin crosses the 100mV threshold, a zero
crossing is detected and ZC counter will increase by 1.
It is reset every time after the DRIVER output is
changed to high.
The voltage vZC is also used for the output overvoltage
protection. Once the voltage at this pin is higher than
the threshold VZCOVP during off-time of the main switch,
the IC is latched off after a fixed blanking time.
To achieve the switch-on at voltage valley, the voltage
from the auxiliary winding is fed to a time delay network
(the RC network consists of Dzc, Rzc1, Rzc2 and Czc as
shown in typical application circuit) before it is applied
to the zero-crossing detector through the ZC pin. The
needed time delay to the main oscillation signal ∆t
should be approximately one fourth of the oscillation
period (by transformer primary inductor and drain-
source capacitor) minus the propagation delay from
vFB up/down counter
action
Always lower than VFBZL
Count upwards till
7
Once higher than VFBZL, but
always lower than VFBZH
Stop counting, no
value changing
Once higher than VFBZH, but
always lower than VFBR1
Count downwards
till 1
Once higher than VFBR1
Set up/down
counter to 1
1Case 3
Case 2
Case 1
Up/down
counter
n
n+1
n+2
n+2
n+2
n+2
n+1
n
n-1
4 5 6 6 6 6 5 4 3
1
1
2 3 4 4 4 4 3 2 1
7 7 7 7 7 7 6 5 4
t
t
VFB
VFBR1
VFBZH
VFBZL
clock T=48ms
1
CoolSET® - Q1
ICE2QR2280G
Functional Description
Version 2.0 9 June 7, 2010
thedetected zero-crossing to the switch-on of the main
switch tdelay, theoretically:
[2]
This time delay should be matched by adjusting the
time constant of the RC network which is calculated as:
[3]
3.3.1.3 Ringing suppression time
After MOSFET is turned off, there will be some
oscillation on VDS, which will also appear on the voltage
on ZC pin. To avoid that the MOSFET is turned on
mistriggerred by such oscillations, a ringing
suppression timer is implemented. The time is
dependent on the voltage vZC. When the voltage vZC is
lower than the threshold VZCRS, a longer preset time
applies, while a shorter time is set when the voltage vZC
is higher than the threshold.
3.3.1.4 Switch on determination
After the gate drive goes to low, it can not be changed
to high during ring suppression time.
After ring suppression time, the gate drive can be
turned on when the ZC counter value is higher or equal
to up/down counter value.
However, it is also possible that the oscillation between
primary inductor and drain-source capacitor damps
very fast and IC can not detect enough zero crossings
and ZC counter value will not be high enough to turn on
the gate drive. In this case, a maximum off time is
implemented. After gate drive has been remained off
for the period of TOffMax, the gate drive will be turned on
again regardless of the counter values and VZC. This
function can effectively prevent the switching
frequency from going lower than 20kHz, otherwise
which will cause audible noise, during start up.
3.3.2 Switch Off Determination
In the converter system, the primary current is sensed
by an external shunt resistor, which is connected
between low-side terminal of the main power switch
and the common ground. The sensed voltage across
the shunt resistor vCS is applied to an internal current
measurement unit, and its output voltage V1 is
compared with the regulation voltage VFB. Once the
voltage V1 exceeds the voltage VFB, the output flip-flop
is reset. As a result, the main power switch is switched
off. The relationship between the V1 and the vCS is
described by:
[4]
To avoid mistriggering caused by the voltage spike
across the shunt resistor at the turn on of the main
power switch, a leading edge blanking time, tLEB, is
applied to the output of the comparator. In other words,
once the gate drive is turned on, the minimum on time
of the gate drive is the leading edge blanking time.
In addition, there is a maximum on time, tOnMax,
limitation implemented in the IC. Once the gate drive
has been in high state longer than the maximum on
time, it will be turned off to prevent the switching
frequency from going too low because of long on time.
3.4 Current Limitation
There is a cycle by cycle current limitation realized by
the current limit comparator to provide an overcurrent
detection. The source current of the MOSFET is
sensed via a sense resistor RCS. By means of RCS the
source current is transformed to a sense voltage VCS
which is fed into the pin CS. If the voltage VCS exceeds
an internal voltage limit, adjusted according to the
Mains voltage, the comparator immediately turns off
the gate drive.
To prevent the Current Limitation process from
distortions caused by leading edge spikes, a Leading
Edge Blanking time (tLEB) is integrated in the current
sensing path.
A further comparator is implemented to detect
dangerous current levels (VCSSW) which could occur if
one or more transformer windings are shorted or if the
secondary diode is shorted. To avoid an accidental
latch off, a spike blanking time of tCSSW is integrated in
the output path of the comparator .
3.4.1 Foldback Point Correction
When the main bus voltage increases, the switch on
time becomes shorter and therefore the operating
frequency is also increased. As a result, for a constant
primary current limit, the maximum possible output
power is increased, which the converter may have not
been designed to support.
To avoid such a situation, the internal foldback point
correction circuit varies the VCS voltage limit according
to the bus voltage. This means the VCS will be
decreased when the bus voltage increases. To keep a
constant maximum input power of the converter, the
∆t
Tosc
4
------------ tdelay
–=
τtd Czc
Rzc1 Rzc2
⋅
Rzc1 Rzc2
+
---------------------------------
⋅=
V13.3 Vcs
⋅0.7+=
CoolSET® - Q1
ICE2QR2280G
Functional Description
Version 2.0 10 June 7, 2010
required maximum VCS versus various input bus
voltage can be calculated, which is shown in Figure 6.
Figure 6 Variation of the VCS limit voltage according
to the IZC current
According to the typical application circuit, when
MOSFET is turned on, a negative voltage proportional
to bus voltage will be coupled to auxiliary winding.
Inside CoolSET® - Q1, an internal circuit will clamp the
voltage on ZC pin to nearly 0V. As a result, the current
flowing out from ZC pin can be calculated as
[5]
When this current is higher than IZC_1, the amount of
current exceeding this threshold is used to generate an
offset to decrease the maximum limit on VCS. Since the
ideal curve shown in Figure 6 is a nonlinear one, a
digital block in CoolSET® - Q1 is implemented to get a
better control of maximum output power. Additional
advantage to use digital circuit is the production
tolerance is smaller compared to analog solutions. The
typical maximum limit on VCS versus the ZC current is
shown in Figure 7.
Figure 7V
CS-max versus IZC
3.5 Active Burst Mode Operation
At light load condition, the IC enters Active Burst Mode
operation to minimize the power consumption. Details
about Active Burst Mode operation are explained in the
following paragraphs.
3.5.1 Entering Active Burst Mode Operation
For determination of entering Active Burst Mode
operation, three conditions apply:
• the feedback voltage is lower than the threshold of
VFBEB(1.25V). Accordingly, the peak current sense
voltage across the shunt resistor is 0.17;
• the up/down counter is 7; and
• a certain blanking time (tBEB).
Once all of these conditions are fulfilled, the Active
Burst Mode flip-flop is set and the controller enters
Active Burst Mode operation. This multi-condition
determination for entering Active Burst Mode operation
prevents mistriggering of entering Active Burst Mode
operation, so that the controller enters Active Burst
Mode operation only when the output power is really
low during the preset blanking time.
3.5.2 During Active Burst Mode Operation
After entering the Active Burst Mode the feedback
voltage rises as VOUT starts to decrease due to the
inactive PWM section. One comparator observes the
feedback signal if the voltage level VBH (3.6V) is
exceeded. In that case the internal circuit is again
activated by the internal bias to start with swtiching.
Turn-on of the power MOSFET is triggered by the
timer. The PWM generator for Active Burst Mode
operation composes of a timer with a fixed frequency of
50kHz, typically, and an analog comparator. Turn-off is
resulted by comparison of the voltage signal v1 with an
internal threshold, by which the voltage across the
shunt resistor VcsB is 0.34V, accordingly. A turn-off can
also be triggered by the maximal duty ratio controller
which sets the maximal duty ratio to 50%. In operation,
the output flip-flop will be reset by one of these signals
which come first.
If the output load is still low, the feedback signal
decreases as the PWM section is operating. When
feedback signal reaches the low threshold VBL(3.0V),
the internal bias is reset again and the PWM section is
disabled until next time regultaion siganl increases
beyond the VBH threshold. If working in Active Burst
Mode the feedback signal is changing like a saw tooth
between 3.0V and 3.6V shown in Figure 8.
3.5.3 Leaving Active Burst Mode Operation
The feedback voltage immediately increases if there is
a high load jump. This is observed by one comparator.
As the current limit is 34% during Active Burst Mode a
certain load is needed so that feedback voltage can
exceed VLB (4.5V). After leaving active busrt mode,
maximum current can now be provided to stabilize VO.
In addition, the up/down counter will be set to 1
0.6
0.7
0.8
0.9
1
80 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400
Vin(V)
Vcs-max(V)
IZC
VBUSNa
RZC1NP
------------------------
=
0.6
0.7
0.8
0.9
1
300 500 700 900 1100 1300 1500 1700 1900 2100
Izc(uA)
Vcs-max(V)
CoolSET® - Q1
ICE2QR2280G
Functional Description
Version 2.0 11 June 7, 2010
immediately after leaving Active Burst Mode. This is
helpful to decrease the output voltage undershoot.
Figure 8 Signals in Active Burst Mode
3.6 Protection Functions
The IC provides full protection functions. The following
table summarizes these protection functions.
Table 2 Protection features
During operation, the VCC voltage is continuously
monitored. In case of an under- or an over-voltage, the
IC is reset and the main power switch is then kept off.
After the VCC voltage falls below the threshold VVCCoff,
the startup cell is activated. The VCC capacitor is then
charged up. Once the voltage exceeds the threshold
VVCCon, the IC begins to operate with a new soft-start.
In case of open control loop or output over load, the
feedback voltage will be pulled up . After a blanking
time of 24ms, the IC enters auto-restart mode. The
blanking time here enables the converter to provide a
high power in case the increase in VFB is due to a
sudden load increase. During off-time of the power
switch, the voltage at the zero-crossing pin is
monitored for output over-voltage detection. If the
voltage is higher than the preset threshold vZCOVP, the
IC is latched off after the preset blanking time.
If the junction temperature of IC exceeds 140 °C, the IC
enter into autorestart mode.
If the voltage at the current sensing pin is higher than
the preset threshold vCSSW during on-time of the power
switch, the IC is latched off. This is short-winding
protection.
During latch-off protection mode, when the VCC
voltage drops to 10.5V,the startup cell is activated and
the VCC voltage is charged to 18V then the startup cell
is shut down again and repeats the previous procedure.
There is also an maximum on time limitation inside
ICE2QR2280G. Once the gate voltage is high longer
than tOnMAx, it is turned off immediately.
VCC Overvoltage Auto Restart Mode
VCC Undervoltage Auto Restart Mode
Overload/Open Loop Auto Restart Mode
Over temperature Auto Restart Mode
Output Overvoltage Latched Off Mode
Short Winding Latched Off Mode
VFBEB
VFBBOn
VFBLB
VFB
t
VCSB
1.0V
VCS
VVCCoff
VVCC t
t
VO
t
VFBBOff
Max. Ripple < 1%
Blanking Window (tBEB)
Current limit level
during Active Burst
Mode
Leaving
Active Burst
Mode
Entering
Active Burst
Mode
CoolSET® - Q1
ICE2QR2280G
Electrical Characteristics
Version 2.0 12 June 7, 2010
4 Electrical Characteristics
Note: All voltages are measured with respect to ground (Pin 12). The voltage levels are valid if other ratings are
not violated.
4.1 Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to
pin 11 (VCC) is discharged before assembling the application circuit.
4.2 Operating Range
Note: Within the operating range the IC operates as described in the functional description.
Parameter Symbol Limit Values Unit Remarks
min. max.
Drain Source Voltage VDS -800 VTj=25°C
Pulse drain current, tp limited by Tjmax ID_Puls1 -4.9 A
Avalanche energy, repetitive tAR limited by
max. Tj=150°C1)
1) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
EAR1 -0.047 mJ
Avalanche current, repetitive tAR limited by
max. Tj=150°C
IAR1 -1.5 A
VCC Supply Voltage VVCC -0.3 27 V
FB Voltage VFB -0.3 5.5 V
ZC Voltage VZC -0.3 5.5 V
CS Voltage VCS -0.3 5.5 V
Maximum current out from ZC pin IZCMAX 3 - mA
Junction Temperature Tj-40 150 °CController & CoolMOS®
Storage Temperature TS-55 150 °C
Thermal Resistance
Junction -Ambient
RthJA -85 K/W with 232mm2 ,2 oz
copper area on drain pin
Ta=25°C
Thermal Resistance
Junction -Drain
RthJl 20 K/W with 232mm2 ,2 oz
copper area on drain pin
ESD Capability (incl. Drain Pin) VESD - 2 kV Human body model2)
2) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor)
Parameter Symbol Limit Values Unit Remarks
min. max.
VCC Supply Voltage VVCC VVCCoff VVCCOVP V
CoolSET® - Q1
ICE2QR2280G
Electrical Characteristics
Version 2.0 13 June 7, 2010
4.3 Characteristics
4.3.1 Supply Section
Note: The electrical characteristics involve the spread of values within the specified supply voltage and junction
temperature range TJ from – 25 °C to 125 °C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
4.3.2 Internal Voltage Reference
Junction Temperature of
Controller
TjCon -25 130 °C
Junction Temperature of
CoolMOS®
TjCoolMOS -25 150 °C
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Start Up Current IVCCstart -300 550 µAVVCC =VVCCon -0.2V
VCC Charge Current IVCCcharge1 -5.0 -mA VVCC = 0V
IVCCcharge2 0.8 - - mA VVCC = 1V
IVCCcharge3 -1-mA VVCC =VVCCon -0.2V
Maximum Input Current of
Startup Cell and CoolMOS®
IDrainIn - - 2 mA VVCC =VVCCon -0.2V
Leakage Current of
Startup Cell and CoolMOS®
IDrainLeak -0.2 50 µAVDrain = 650V
at Tj=100°C
Supply Current in normal
operation
IVCCNM -1.5 2.3 mA output low
Supply Current in
Auto Restart Mode with Inactive
Gate
IVCCAR -300 -µAIFB = 0A
Supply Current in Latch-off Mode IVCClatch -300 -µA
Supply Current in Burst Mode with
inactive Gate
IVCCburst -500 950 µAVFB = 2.5V, exclude the
current flowing out from
FB pin
VCC Turn-On Threshold VVCCon 17.0 18.0 19.0 V
VCC Turn-Off Threshold VVCCoff 9.8 10.5 11.2 V
VCC Turn-On/Off Hysteresis VVCChys -7.5 - V
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Internal Reference Voltage VREF 4.80 5.00 5.20 VMeasured at pin FB
IFB=0
CoolSET® - Q1
ICE2QR2280G
Electrical Characteristics
Version 2.0 14 June 7, 2010
4.3.3 PWM Section
4.3.4 Current Sense
4.3.5 Soft Start
4.3.6 Foldback Point Correction
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Feedback Pull-Up Resistor RFB 14 23 33 kΩ
PWM-OP Gain GPWM 3.18 3.3 - -
Offset for Voltage Ramp VPWM 0.6 0.7 - V
Maximum on time in normal
operation
tOnMax 22 30 41 µs
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Peak current limitation in normal
operation
VCSth 0.97 1.03 1.09 V
Leading Edge Blanking time tLEB 200 330 460 ns
Peak Current Limitation in
Active Burst Mode
VCSB 0.29 0.34 0.39 V
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Soft-Start time tSS 8.5 12 -ms
soft-start time step tSS_S1)
1) The parameter is not subjected to production test - verified by design/characterization
-3-ms
Internal regulation voltage at
first step
VSS11) -1.76 - V
Internal regulation voltage step
at soft start
VSS_S1) -0.56 - V
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
ZC current first step threshold IZC_FS 0.350 0.5 0.621 mA
ZC current last step threshold IZC_LS 1.3 1.7 2.2 mA
CS threshold minimum VCSMF -0.66 - V Izc=2.2mA, VFB=3.8V
CoolSET® - Q1
ICE2QR2280G
Electrical Characteristics
Version 2.0 15 June 7, 2010
4.3.7 Digital Zero Crossing
4.3.8 Active Burst Mode
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Zero crossing threshold voltage VZCCT 50 100 170 mV
Ringing suppression threshold VZCRS -0.7 - V
Minimum ringing suppression
time
tZCRS1 1.62 2.5 4.5 µs VZC > VZCRS
Maximum ringing suppression
time
tZCRS2 -25 -µs VZC < VZCRS
Threshold to set Up/Down
Counter to one
VFBR1 3.9 V
Threshold for downward
counting at low line
VFBZHL 3.2 V
Threshold for upward counting
at low line
VFBZLL 2.5 V
Threshold for downward
counting at hig line
VFBZHH 2.9 V
Threshold for upward counting
at highline
VFBZLH 2.3 V
ZC current for IC switch
threshold to high line
IZCSH -1.3 -mA
ZC current for IC switch
threshold to low line
IZCSL -0.8 -mA
Counter time1)
1) The parameter is not subjected to production test - verified by design/characterization
tCOUNT 48 ms
Maximum restart time in normal
operation
tOffMax 30 42 57.5 µs
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Feedback voltage for entering
Active Burst Mode
VFBEB -1.25 - V
Minimum Up/down value for
entering Active Burst Mode
NZC_ABM 7
Blanking time for entering Active
Burst Mode
tBEB -24 -ms
Feedback voltage for leaving
Active Burst Mode
VFBLB -4.5 - V
Feedback voltage for burst-on VFBBOn -3.6 - V
Feedback voltage for burst-off VFBBOff 3.0 V
CoolSET® - Q1
ICE2QR2280G
Electrical Characteristics
Version 2.0 16 June 7, 2010
4.3.9 Protection
Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
4.3.10 CoolMOS® Section
Fixed Switching Frequency in
Active Burst Mode
fsB 39 52 65 kHz
Max. Duty Cycle in Active Burst
Mode
DmaxB -0.5 -
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
VCC overvoltage threshold VVCCOVP 24.0 25.0 26.0 V
Over Load or Open Loop
Detection threshold for OLP
protection at FB pin
VFBOLP 4.5 V
Over Load or Open Loop
Protection Blanking Time
tOLP_B 20 30 44 ms
Output Overvoltage detection
threshold at the ZC pin
VZCOVP 3.55 3.7 3.84 V
Blanking time for Output
Overvoltage protection
tZCOVP 100 µs
Threshold for short winding
protection
VCSSW 1.63 1.68 1.78 V
Blanking time for short-windding
protection
tCSSW -190 -ns
Over temperature protection1) TjCon 130 140 150 °C
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Drain Source Breakdown Voltage V(BR)DSS 800
870
-
-
-
-
VTj = 25°C
Tj = 110°C
Drain Source On-Resistance RDSon1 -2.26
5.02
6.14
2.62
5.81
7.10
Ω
Ω
Ω
Tj = 25°C
Tj=125°C1)
Tj=150°C at ID = 0.81A
1) The parameter is not subjected to production test - verified by design/characterization
Effective output capacitance, energy
related
Co(er) -16.31) -pF VDS = 0V to 480V
Rise Time trise -302)
2) Measured in a Typical Flyback Converter Application
-ns
Fall Time tfall -302) -ns
CoolSET® - Q1
ICE2QR2280G
Typical CoolMOS® Performance Characteristic
Version 2.0 17 June 7, 2010
5 Typical CoolMOS® Performance Characteristic
Figure 9 Drain-source breakdown voltage;VBR(DSS)=f(Tj),ID=0.25mA
Figure 10 Safe Operating Area(SOA) curve for ICE2QR2280G
Safe Operating Area for ICE2QR2280G
I
D
= f ( V
DS
)
parameter : D = 0, T
C
= 25deg.C
0.0001
0.001
0.01
0.1
1
10
110 100 1000
V
DS
[V]
I
D
[A]
DC
tp = 100ms
tp = 0.1ms
tp = 1ms
tp = 10ms
tp = 0.01ms
CoolSET® - Q1
ICE2QR2280G
Input Power Curve
Version 2.0 18 June 7, 2010
6 Input Power Curve
Two input power curves gives typical input power versus ambient temperature are showed below;
Vin=85~265Vac(Figure 11) and Vin=230Vac(Figure 12). The curves are derived based on a typical
discontinuous mode flyback model which considers 150V maximum secondary to primary reflected voltage. The
calculation is based on 232mm^2,2 ounce copper area as heatsink for the device. The input power already
includes power loss at input comman mode choke and bridge rectifier and the CoolMOS®. The device saturation
current(ID_plus@Tj=125 °C) is also considered.
To estimate the out power of the device, it is simply multiplying the input power at a particulary ambient
temperature with the estimated efficiency for the application. For example, a wide range input voltage(Figure 11),
operating temperature is 50 °C, estimated efficiency is 80%,the output power is 24W(30W*0.8)
Figure 11 Input Power curve Vin=85~265Vac;Pin=f(Ta)
Figure 12 Input Power curve Vin=230Vac;Pin=f(Ta)
Input Power curve of ICE2QR2280G
0
5
10
15
20
25
30
35
40
0 25 35 45 55 65 75 85 95 105 115 125
Ambient Temperature[0C]
Input Power(85Vac~265Vac)[W]
Input Power curve of ICE2QR2280G
0
10
20
30
40
50
60
70
0 2535455565758595105115125
Ambient Temperature[0C]
Input Power(230Vac)[W]
CoolSET® - Q1
ICE2QR2280G
Outline dimension
Version 2.0 19 June 7, 2010
7 Outline dimension
Figure 13 PG-DSO-12
Dimensions in mm
PG-DSO-12
(Plastic Dual Small Outline)
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