12-05-2002
MSC1400M
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MSC1400M is a NPN bipolar transistor specifically
designed for high peak pulse power applications such as
DME/TACAN.
This device is capable of withstanding a minimum 25:1 load
VSWR at any phase angle under full rated conditions.
Internal impedance matching provides consistent
broadband performance.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
y
mbol Paramete
r
V
alue Unit
PDISS Power Dissi
p
ation 1000 W
IC Device Current 28 A
VCC Collector-Supply Voltage* 55 V
TJ Junction Temperature 200 °
°°
°C
TSTG Storage Temperature -65 to +200 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.12 °
°°
°C/W
Features
FeaturesFeatures
Features
1025 – 1150 MHz
50 VOLTS
INPUT/OUTPUT MATCHING
POUT = 400 WATTS
GP = 6.5 dB MINIMUM
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
12-05-2002
MSC1400M
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATICSTATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCBO I
C = 15 mA IE = 0 mA 65 --- --- V
BVEBO I
E = 1 mA IC = 0 mA 3.5 --- --- V
BVCER IC = 50 mA RBE = 10
65 --- --- V
ICES V
CE = 50 V --- --- 35 mA
HFE VCE = 5 V IC = 1 A 15 --- 120 ---
DYNAMIC
DYNAMIC DYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
POUT f = 1025 - 1150 MHz PIN = 90 W VCC = 50 V 400 --- --- W
η
ηη
ηC f = 1025 - 1150 MHz PIN = 90 W VCC = 50 V 40 --- --- %
GP f = 1025 - 1150 MHz PIN = 90 W VCC = 50 V 6.5 --- --- dB
Conditions Pulse Width = 10uS Duty Cycle = 1%
12-05-2002
MSC1400M
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA