620A
INVERTER GRADE THYRISTORS Hockey Puk Version
ST333C..L SERIES
Bulletin I25187/A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
case style TO-200AC (B-PUK)
IT(AV) 620 A
@ Ths 55 °C
IT(RMS) 1230 A
@ Ths 25 °C
ITSM @ 50Hz 11000 A
@ 60Hz 11500 A
I2t@ 50Hz 605 KA2s
@ 60Hz 553 KA2s
VDRM/VRRM 400 to 800 V
tq range 10 to 30 µs
TJ- 40 to 125 °C
Parameters ST333C..L Units
Major Ratings and Characteristics
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ST333C..L Series
ST333C..L 50
Voltage VDRM/VRRM, maximum VRSM , maximum IDRM/IRRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
V V mA
04 400 500
08 800 900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Current Carrying Capability
IT(AV) Max. average on-state current 620 (305) A180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 1230 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one half cycle, 11000 t = 10ms No voltage
non-repetitive surge current 11500 At = 8.3ms reapplied
9250 t = 10ms100% VRRM
9700 t = 8.3ms reapplied Sinusoidal half wave,
I2tMaximum I2t for fusing 605 t = 10ms No voltage Initial TJ = TJ max
553 t = 8.3ms reapplied
428 t = 10ms 100% VRRM
391 t = 8.3ms reapplied
I2√tMaximum I2√t for fusing 6050 KA2√st = 0.1 to 10ms, no voltage reapplied
Parameter ST333C..L Units Conditions
On-state Conduction
KA2s
Frequency Units
50Hz 1430 1250 2340 1940 6310 5620
400Hz 1670 1170 2310 2010 3440 5030
1000Hz 1080 880 2090 1800 2040 1750
2500Hz 530 400 1190 990 990 800
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd VDRM VDRM VDRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF
ITM
180oel
180oel 100µs
ITM ITM
V
A
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ST333C..L Series
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current Fig. 8 - Maximum Non-repetitive Surge Current
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ST333C..L Series
Fig. 17 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1)(2)
Insta nta ne o us Gate Curre nt (A)
Insta nta ne ous G a te Voltag e (V)
Recta ng ular g a te p ulse
a) Recomme n d e d lo a d line for
b) Recommended load lin e for
<=30% rate d di/dt : 10V, 10o h ms
rate d di/dt : 20V, 10o hms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST333C..L Series Frequenc y Limite d by PG(AV)
(4)
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ST333C..L Series
VTM Max. peak on-state voltage 1.96 ITM= 1810A, TJ = TJ max, tp = 10ms sine wave pulse
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of forward
slope resistance
rt2High level value of forward
slope resistance
IHMaximum holding current 600 TJ = 25°C, IT > 30A
ILTypical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST333C..L Units Conditions
On-state Conduction
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.93 (I > π x IT(AV)), TJ = TJ max.
V
0.58 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.58 (I > π x IT(AV)), TJ = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
of turned-on current ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
Switching
Parameter ST333C..L Units Conditions
1000 A/µs
tdTypical delay time 1.1
Min Max
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
off-state voltage available on request
IRRM Max. peak reverse and off-state
IDRM leakage current
Parameter ST333C..L Units Conditions
Blocking
500 V/µs
50 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 60
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 ATJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD Max. DC gate current not to trigger 20 mA
VGD Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST333C..L Units Conditions
WTJ = TJ max., f = 50Hz, d% = 50
20
5
VTJ = TJ max, tp ≤ 5ms
200 mA
3VTJ = 25°C, VA = 12V, Ra = 6Ω
TJ = TJ max, rated VDRM applied
10 30
µs
tqMax. turn-off time
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ST333C..L Series
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.11 DC operation single side cooled
junction to heatsink 0.05 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.011 DC operation single side cooled
case to heatsink 0.005 DC operation double side cooled
FMounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 250 g
Parameter ST333C..L Units Conditions
K/W
Thermal and Mechanical Specification
°C
K/W
Case style TO - 200AC (B-PUK) See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Single Side Double Side Single Side Double Side
180° 0.012 0.010 0.008 0.008
120° 0.014 0.015 0.014 0.014
90° 0.018 0.018 0.019 0.019 K/W TJ = TJ max.
60° 0.026 0.027 0.027 0.028
30° 0.045 0.046 0.046 0.046
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Ordering Information Table
5 6 8 9
ST 33 3 C08 LH K 1
3410
7
Device Code
1 2
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
10 CN DN EN -- --
12 CM DM EM FM * --
15 CL DL EL FL * HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- FJ HJ
30 -- -- -- -- HH
tq(µs)
1-Thyristor
2-Essential part number
3-3 = Fast turn off
4-C = Ceramic Puk
5-Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6-L = Puk Case TO-200AC (B-PUK)
7-Reapplied dv/dt code (for tq test condition)
8-tq code
9-0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
-Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
10 *Standard part number.
All other types available only on request.
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ST333C..L Series
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Outline Table
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
53 (2.09) DIA. MAX.
58.5 (2.3 ) D IA. M AX.
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
4.7 (0.18)
27 (1.06) M AX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
36.5 (1.44)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
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