© 2018 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 175C 100 V
VDGR TJ= 25C to 175C, RGS = 1M100 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 80 A
IDM TC= 25C, Pulse Width Limited by TJM 220 A
IATC= 25C25 A
EAS TC= 25C 400 mJ
dv/dt IS IDM, VDD VDSS,T
J 175C 10 V/ns
PDTC= 25C 230 W
TJ-55 ... +175 C
TJM 175 C
Tstg -55 ... +175 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TrenchTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA80N10T
IXTP80N10T
VDSS = 100V
ID25 = 80A
RDS(on)
14m
DS99648B(11/18)
G = Gate D = Drain
S = Source Tab = Drain
TO-263
(IXTA)
G
S
D (Tab)
TO-220
(IXTP)
D (Tab)
S
GD
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250A 105 V
VGS(th) VDS = VGS, ID = 50A 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = 105V, VGS = 0V 5 A
TJ = 150C 150A
RDS(on) VGS = 10V, ID = 25A, Notes 1& 2 14 m
Features
Ultra-Low On Resistance
Avalanche Rated
Low Package Inductance
- Easy to Drive and to Protect
175C Operating Temperature
Fast Intrinsic Diode
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA80N10T
IXTP80N10T
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 40A, Note 1 33 55 S
Ciss 3040 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 420 pF
Crss 90 pF
td(on) 31 ns
tr 54 ns
td(off) 40 ns
tf 48 ns
Qg(on) 60 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A 21 nC
Qgd 15 nC
RthJC 0.65C/W
RthCH TO-220 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 80 A
ISM Repetitive, Pulse Width Limited by TJM 220 A
VSD IF = 25A, VGS = 0V, Note 1 1.1 V
trr 100 ns
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RG = 15 (External)
IF = 25A, VGS = 0V
-di/dt = 100A/s, VR = 50V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
© 2018 IXYS CORPORATION, All rights reserved
IXTA80N10T
IXTP80N10T
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
80
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VDS - Volts
ID - Amperes
V
GS
= 10V
9V
7V
6V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
40
80
120
160
200
240
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
ID - Amperes
V
GS
= 10V
6V
7V
8V
9V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
10
20
30
40
50
60
70
80
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VDS - Volts
ID - Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 40A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 80A
I
D
= 40A
Fig. 5. R
DS(on)
Normalized to I
D
= 40A Value
vs. Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
4.2
4.6
0 25 50 75 100 125 150 175 200 225 250
ID - Amperes
RDS(on) - Normalized
V
GS
= 10V
15V T
J
= 175
o
C
T
J
= 25
o
C
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA80N10T
IXTP80N10T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
150
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
0.30.40.50.60.70.80.9 1 1.11.21.31.41.5
V
SD
- Volts
I
S
- Amperes
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50 55 60
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
© 2018 IXYS CORPORATION, All rights reserved IXYS REF: T_80N10T (3V)12-11-07-A
IXTA80N10T
IXTP80N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
35
40
45
50
55
60
65
70
75
80
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
r - Nanoseconds
R
G
= 15Ω , V
GS
= 10V
V
DS
= 50V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
40
80
120
160
200
240
280
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
25
35
45
55
65
75
85
95
t
d
(
o n
)
- Nanoseconds
t
r
t
d(on)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
39
40
41
42
43
44
45
46
47
48
49
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
36
40
44
48
52
56
60
64
68
72
76
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
R
G
= 15Ω, V
GS
= 10V
V
DS
= 50V
I
D
= 10A
I
D
= 30A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
40
42
44
46
48
50
10 12 14 16 18 20 22 24 26 28 30
I
D
- Amperes
t
f
- Nanoseconds
30
38
46
54
62
70
78
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
R
G
= 15Ω, V
GS
= 10V
V
DS
= 50V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
35
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r - Nanoseconds
R
G
= 15Ω V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
60
80
100
120
140
160
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
30
70
110
150
190
230
270
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 50V
I
D
= 30A
I
D
= 10A
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