VUO110-16NO7
B -
C~
A+
D~
E~
D1 D3 D5
D2 D4 D6
3~ Rectifier Bridge
Standard Rectifier Module
Part number
VUO110-16NO7
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
PWS-E
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
RRM
1600
I 125
FSM
1200
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20191220cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
VUO110-16NO7
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.13
R0.7 K/W
R
min.
125
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA2V = V
R
T = 25°C
VJ
I = A
V
T = °C
C
110
P
tot
175 WT = 25°C
C
RK/W0.3
50
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.46
T = 25°C
VJ
150
V
F0
V0.79T = °C
VJ
150
r
F
4.5 mΩ
V1.04T = °C
VJ
I = A
V
50
1.47
I = A
150
I = A
150
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
37
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
1.20
1.30
5.20
5.04
kA
kA
kA
kA
1.02
1.10
7.20
6.98
1600
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
IXYS reserves the right to change limits, conditions and dimensions. 20191220cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
VUO110-16NO7
Ratings
XXXX-XXXX yywwZ
Circuit
Diagram
Product
Number
Date Code
Logo
UL
Lot#
1234
Location
Package
T
op
°C
M
D
Nm5.75
mounting torque
4.25
T
VJ
°C150
virtual junction temperature
-40
Weight
g284
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm5.75
terminal torque
4.25
V
V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
12.0
26.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
125-40
terminal to terminal
PWS-E
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO110-16NO7 462403Box 5VUO110-16NO7Standard
3000
ISOL
T
stg
°C125
storage temperature
-40
2500
threshold voltage
V0.79
m
Ω
V
0 max
R
0 max
slope resistance *
3.3
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
°C
* on die level
150
IXYS reserves the right to change limits, conditions and dimensions. 20191220cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
VUO110-16NO7
M6x12
7
3
30
27
6.5
6.5
C ~ D ~ E ~
A + B -
5
4
15
12 25
66
26 26
72
80
94
4
5
6
3
1
2
7
M6
B -
C~
A+
D~
E~
D1 D3 D5
D2 D4 D6
Outlines PWS-E
IXYS reserves the right to change limits, conditions and dimensions. 20191220cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
VUO110-16NO7
0.001 0.01 0.1 1
400
600
800
1
0
00
2 3 4 5 6 7 8 9
1
10
3
10
4
0 10 20 30 40 50
0
10
20
30
40
50
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
I2t
[A2s]
IFSM
[A]
t [s]
Ptot
[W]
IFAV [A] Tamb [°C]
t [ms]
0 25 50 75 100 125 150
0
40
80
120
160
IFAVM
[A]
ZthJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.5 1.0 1.5
0
40
80
120
160
200
IF
[A]
VF[V]
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
= 125°C
T
VJ
= 25°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
t [ms]
Fig. 3 I2t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
TC[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Riti
0.100 0.020
0.010 0.010
0.162 0.225
0.258 0.800
0.170 0.580
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
0.8 x V RRM
50 Hz
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20191220cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved