Numerical Index 2N1642-2NI1731 =| MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =|/z e = oe = 5 | a | REPLACE- PAGE Py 2/ Vop | Vee |= fre @ Io Versaty @ Ie 2) fe Je WE 2/3) ment | numper | UE = 3 gz el hw |B| "2{B =) @ 25C | Bj) C | Wolts) | (volts) |S | (min) (max) =| (volts) s 3 5/3 2N1642 S]P CHP 250M | A | 160 30 6.0 ]/U 15 Loo* 2N1643 S|P AFA 250M | A | 160 25 25 |U 10 25 Loo* 2N1644 S | N | 2N2218 8-108 | MSA 2.0W |] C 1175 60 40 |R | 40} 120 150M 1.5 150M 50M] T 2N1645 GIP HPA 1.0W | A | 100 35 20 | 0 20 0.2A 4.0 0.2A 25 |E 450M T 2N1646 GIN HSS 150M 7A | 100 15 12 /Ss 20 10M 2N1647 S|N HPA 267M | C |175 80 80 |v 15 45 O.5A 3.0 1.0A 3. OM) T 2N1648 S|N HPA 267M | C }175 120 80 | 0 15 45 O.5A 3.0 1.0A 2.0M| T 2N1649 S|N HPA 267M | C | 175 80 80 | Vv 30 90 0.54 3.0 1.04 3.0M| T 2N1650 S|N HPA 267M | C | 175 120 8010 30 0.54 3.0 1.0A 2.0M| T 2NL651 G| P {| 2N2832 7-91 LPA 1o00w | c } 110 60 60 1s 35 | 140 10A 0.65 25A 20 |E 2N1L652 G| P } 2N2833 7-91 LPA 100w | Cc | 110 100 100 [|S 35 | 140 LOA 0.65 254A 20 |E 2N1653 G | P_[2N2834 7-91 LPA 100W [Cc | 110 120 120 [Ss 35 | 140 LOA 0.65 25A 20 |E 2N1654 s|N LPA 250M | A | 160 100 80 }0 20 45 1.0M 0.3 5.0M LOOK |B 2N1655 S]N LPA 250M | A | 160 125 100 | Oo 10 22 1,0M 0.3 5.0M LOOK |B 2N1656 S|N LPA 250M | A | 160 125 100 | 0 20 45 1.0M 0.3 5.0M 100K |B 2N1657 S|N LPA c | 200 60 60 |S [7.5 30 | 0.854 4.5 | 0.854 2.0M |B 2N1L660 S|N LPA 85W | Cc | 200 60 60 | R 45 | 135 L.0A 4.0 1.0A 25M |T 2N1661 SEN LPA 85W | Cc 1200 80 80 |R 45 | 135 1.04 4.0 1.0A 25M |T 2N1662 S|N LPA 85wW | C | 200 100 100 FR 45 | 135 1.0A 4.0 1.0A 25M {T 2N1663 S|N HSS 150M {A | 150 20 15 [0 30 | 150 20M 0.25 10M 100M |T 2N1664 GIP AFA 0.2w | A | 100 45 40 }R 45 | 120 10M 0.5 O.1A 50 1E G.1M |B 2N1665 GIP RFA 150M {A 85 15 12 |0 }5.0 | 100 10M 300M | T 2N1666 G|P | 2N3616 7-121} PMS 30W 7 C 90 80 60 |V 15 30 6.0A 0.5 6.0A 2.0K [E 2N1667 G|P | 2N3618 7-121} PMS 30W 1 C 90 60 48 |X 35 80 6.0A 0.5 6.04 2.0K [E 2N1668 G| P | 2N3616 7-121] PMS 30W | C 90 60 48 |X 20 45 6.0A 0.5 6.0A 2.0K JE 2N1669 G|P | 2N3616 7-121} PMS 30w {Cc 90 80 60 |X 20 65 6.0A 0.5 6.04 2.0K JE 2N1670 GiP MSS |0.12W [A 85 100 15 LOM 2NL671 Unijunction Transistor, see Table on Page 1-174 2N1672 G(N SPP 120M [A 8 40 40 |X 20 1.0M 15 JE 2.0M |B 2N1L672A {Gi N SPP 120M | A 85 40 40 |X 20 1.0M 15 {E 2.0M |B 2N1L673 G|P RFA 80M }A 85 35 20 JE 2N1674 S| WN APA 0.2W | A | 200 45 45 [0 1.5 5.0M 50 |E 20M |T 2N1675 S|N PHS 50W | C 4150 100 100 {Ss 25 | 100 1.04 2.5 5.0A 120M |T 2N1L676 s|P CHP 100M | A | 140 4.5 4.5 |U O.1 5.0M 16M |T 2N1677 S|P CHP 100M | A | 140 4.5 4.5 |U O.1 5.0M 25 |E 16M | T 2N1L678 G|P MSS 120M | A 85 60 60 1S 25 20M 20M 25M 1B | 2N1679 S]N MSA 1.0W | A | 175 100 55 |0 40 | 120 600M 3.6 600M 50M |T | 2N1680 S]N MSA L.OW | A [175 60 35 | 0 40 | 120 600M 3.6 600M 50M | T 2N1681 G|P MSS | 0.18W | C | 100 30 15 |0 30 | 120 10M o.1 LOM 5.0M {B 2NL682 S|N MSA 500M |A | 175 25 20 [R 20 10M 0.6 LOM 200M | T 2N1683 GI] P HSS 150M | A 85 13 12 |0 50 40M 12 1.04 50M |T | 2NL684 GI} P MSS LOOM | A | 100 25 25 |X 0.15 12M 4.0M |B 2N1685 GIP MSS 100M {A | 100 25 20 |R 60 | 180 30M 100M 8.0M |B 2N1686 thru Thyristors, see Table on Page 1+154 2N1689 2N1690 S|N LPA 40w | C {200 80 80 1,0 20 60 500M 7.5 500M 90K |E 2N1691 SEN LPA 40w | Cc {200 120 120 {0 20 60 500M 7.5 90K JE 2N1692 G|P 9-24 RFA 350M | A | 100 25 15/0 3.0 200M 2N1693 GIP 9-24 RFA 350M |A | 100 25 25 15 4.0 200M 2N1694 G|N MSA 75M | A 85 20 20 |0 17 50 1.0M 3.0M |B 2N1699 G|P RFA 100M | A | 100 40 40 |X 20 1,175 1.5M 20 |E 2N1700 S|N MSS 5.0W | C | 200 60 60 |V 20 80 100M 12.5 2.58 0.4M |B 2N1701 S|N MSS 25wW | C | 200 60 60 fV 20 80 300M 20 5.0A 0.35M |B 2N1702 S|N MSS 75W |C | 200 60 60 | Vv 15 60 800M 20 5.0A 0.3M {B 2N1703 S|N MSS 75W {Cc | 200 60 60 | Vv 15 60 800M 0.3M |B 2N1704 S| N }2N2218 8-108 | MSA 3.3M [J | 175 45 45 10 50 | 200 1.0M 1.0 10M 40 JE 5.0M |B 2N1705 GIP 6-35 AFC 0.2W (A | 100 18 12 |R 70 |E 2N1706 G|P 6-35 AFC 0..2W {A | 100 25 18 |R 60 | 120 20M 50 |E 2N1L707 GP 6-35 AFC 0.2W |A | 100 30 25 ]R 30 | 150 10M 40 |E 2NL708 S|N 8-96 HSS 1.0W |} Cc [175 25 12 10 20 10M 0.22 10M 200M |T 2N1708A |S | N HSs 300M JA | 175 40 29 1R 30 | 120 LOM 0.22 10M 300M {T 2N1709 S|N HPA 15wW }C [175 75 30 |0 |7.5 75 10.354 5.0 1.04 175M |T 2NL710 S|N HPA I5w }c [175 60 30 |O |4.0 | 100 | 0.354 5.0 1L.0A 140M |T 2NL711 S| N | 2N2219A 8-114 | MSA 8comM }A {200 75 50 |R |100 | 300 150M 1.5 150M SO JE 70M | T 2N1711A |S |N | 2N2219A4 8-114 | RFA 1.0W | A }200 75 50 |R $100 | 300 150M 1.0 150M 50 JE 70M [T 2N1711B |S | N [ 2N2219A4 8-114 | RFA 1.0W |A | 200 120 55 }R [100 | 300 150M 0.2 150M 50 [E 70M [T 2N1713 G|P AFC 80M |A 85 30 12 |o 20 1.5M 40 | E 100M |B 2N1714 Sq]N LPA 20W |C |175 90 60 ]0 20 60 200M 2.0 200M 16M |T 2NU715 S|N LPA 20W | Cc [175 150 100 | 0 20 60 200M 2.0 200M 16M |T 2N1716 S|N LPA 20W }C [175 90 60 |0 40 | 120 200M 2.0 200M 16M |T 2N1717 SIN LPA 20W |c [175 150 100 {0 40 | 120 200M 2.0 200M 16M {| T 2N1L718 S|N LPA 20W |C 4175 90 60 {0 20 60 200M 2.0 200M 16M |T 2N1719 SyN LPA 20W |}C [175 150 100 |0 20 60 200M 2.0 200M 16M | T 2N1720 S|N LPA 20W [C [175 90 60 }0 40 | 120 200M 2.0 200M 16M | T 2N1721 SiN LPA 20W }C [175 150 100 } oO 40 | 120 200M 2.0 200M 16M |T 2N1722 S | N | 2N3446 7-111] LPA 5oW |}C 4175 120 80 |0 20 90 2.0A 1.0 2.0A 10M }T 2N1722A |S] N LPA 5oW jC F175 180 120 |o 30 90 2.0A 0.6 2.0A 10M | T 2N1723 S| N | 2N3448 7-111] LPA sow jc {175 120 80 10 50 | 150 2.0A 1.0 2.0A 10M |T 2N1724 S|N 7-71, LPA 50W |] C 175 120 80 10 20 90 2.0A 1.0 2.0A 10M | T 2NL724A |S |N LPA 50w | Cc {175 180 120 |o 30 90 2.0A 0.6 2.0A 10M | T 2NL725 S|N 7-71 LPA 5o0w |c {175 120 80 {0 50 | 150 2.0A 1.0 2.0A 10M |T 2NL726 Gj] P | 2N3323 9-71 RFC 60M |A | 100 20 2018 50 1.0M 100M |M 2NL727 G|P | 2N3324 9-71 RFC 60M |A {100 20 20 1S 20 1.0M 100M |M 2NL728 Gy P | 2N3324 9-71 RFC 60M }A | 100 20 20/8 20 1.0M 100M [M 2N1729 G|P MSS 150M |A 85 25 15 |X 30 100M 0.35 200M 2N1730 GIN MSS 150M |A 85 20 15 |X 30 100M | 0.35 200M 2N1731 G|P AFA 150M jA 85 30 30 |X 40 10M 5.0M |B 1-121 RF Transistors RF TRANSISTOR SELECTOR GUIDES SMALL-SIGNAL TRANSISTORS (Listed in order of operating test frequency and power gain) Min Gpe (dB) f Min Pout (mW)* Type Material Polarity MHz Typ Conversion Gain (dB)f 2N3324 Ge P 10 24 2N2273 Ge P 30 10 2N741, A Ge P 30 16 2N2929 Ge P 60 26 2N700 Ge P 70 20 2N700A Ge P 70 22 2N3323 Ge P 100 11 2N707, A Si N 100 200* 2N1562 Ge P 160 5,0 2N1693 Ge P 160 5.0 2N1561 Ge P 160 6.0 2N1692 Ge P 160 6.0 MM1941 si N 175 7.0 2N4072, 3 Si N 175 10 2N3286 Ge P 200 14 2N3294 Si N 200 14 2N918 Si N 200 15 2N2708 Si N 200 15 2N3281 Ge P 200 16 2N3282 Ge P 200 16 2N3283 Ge P 200 16 2N3284 Ge P 200 16 2N3291, 2 Si N 200 16 2N3127 Ge P 200 17 2N3279, 80 Ge P 200 17 2N3287 thru 90 Si N 200 17 2N3307, 8 Si P 200 17 2N3785 Ge Pp 200 18 2N3783, 4 Ge P 200 20 MM5002 Ge P 200 20 MM5001 Ge P 200 22 MM5000 Ge P 200 24 2N3137 Si N 250 6.0 MM1803 Si N 250 7.5 2N2857 Si N 450 12.5 2N3839 Si N 450 12.5 2N4959 Si P 450 15 2N4958 Si P 450 16 2N4957 Si P 450 17 2N1141, 2, 3 Ge P 500 10 typ 2N1195 Ge P 500 10 typ AF239 Ge P 800 11.2G 2N3544 Si N 1000 10* MM1501 Si N 1500 150* MM1500 Si N 1500 250* MM380 Ge P 1500 fax MM1139 Ge P 108 to 10.7 227 9-6 RF Transistors 2N 1561 (Germanium) 2n 1562 2n1692 2nN1693 CASE 23 CASE 24 (TO-107) (TO-102) 2N1561 2N1692 2N1562 2N1693 MAXIMUM RATINGS Collector connected to case; stud isolated from case G, = 5-6 dB @ 160 MHz P, = 0.4-0.5 W @ 160 MHz PNP germanium mesa transistors for VHF power amplifier applications. Rating Symbol }2N1561)2N1562| 2N1692 )2N1693] Unit Collector-Emitter Voltage Vor 25 25 25 25 Vde Collector-Base Voltage Vor 25 25 25 25 Vde Emitter-Base Voltage* Vep* 3 2 3 2 Vde Collector Current-Continuous I Cc 250 250 250 250 mAdc Peak 500 500 500 500 Total Device Dissipation @ T, = 25C Py 250 250 350 350 mW Derate above 25C 3.33 | 3.33 4.67 | 4.67 |mw/c Total Device Dissipation@ T, =25C | Pp 3 3 3 3 | Watts Derate above 25C 40 40 40 40 mw/? Cc Operating and Storage Junction T Yr Ts t -65 to 100 c Temperature Range & *May be exceeded provided total rated device dissipation is not exceeded. POWER GAIN versus FREQUENCY T T _ 12N1562 P, = 450mW 1693 _ |2N1561 ] P= S50mW />n1692 10 PAA Vow = ~-15DC T= 25C 7 8 \ 2N1561 2N1562 , 2N1692 2N1693 G,, POWER GAIN (DECIBELS) \ I, COLLECTOR CURRENT (mAdc) . \ \ 0 50 70 100 150-200 FREQUENCY ( MHz) 300 400 9-24 600 500 400 300 200 100 0 SAFE OPERATING AREA ABSOLUTE MAXIMUM LIMIT| Vin AREA OF 7, PERMISSIBLE OPERATION 7%) CASE OR STUD TEMPERATURE: Y = 25C 4/4 Yj 0 5 10 15 20 25 Von, COLLECTOR-BASE VOLTAGE (VOLTS) RF Transistors 2N1561, 2N1562, 2N1692, 2N1693 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol | Min | Typ | Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVurg Vde A = 100 wAdc, Vor = 0) 25 - - Collector-Base Breakdown Voltage BVapo Adc Mo = 100 wAdc, i = 0) 25 - - Collector Cutoff Current Io BO pAde Voz = 10 Vdc, Ih = 0) - 1.5 10 Emitter Cutoff Current Iep O mAdc (Vir = 0.4 Vdc, I, = 0) 2N1562, 2N1693 - 5.0 - Vor = 1.0 Vde, To = 9) 2N 1561, 2N1692 - 5.0 - ON CHARACTERISTICS Collector-Emitter Saturation Voltage Vor (sat) Vde Q, = 200 mAdc, I, * 40 mAdc) 2N1561, 2N1692 6 - - 3.0 a, = 200 mAdc, In = 40 mAdc) 2N1562, 2N1693 - - 4,0 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fp MHz fl = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 2N1561, 2N1692 - 500 - Mo = 50 mAdc, Vor = 10 Vdc, f= 100 MHz) 2N1562,2N1693 - 450 - Output Capacitance Cc b pF (Von = 10 Vde, 1, = 0, f= 100 kHz) - 7 10 Small-Signal Current Gain he dB (i, = 50 mAde, V,, = 10 Vde, f= 160 MHz) 2N1561,2N1692 e - 10 - 2N 1562, 2N1693 - 9 - Extrinsic Base Resistance r' Ohms (I, = 20 mAde, Vo, = 10 Vde, f = 300 MHz) b - 25 - FUNCTIONAL TEST Power Gain Gre dB (i, = 100 mAde, VQ_ = 15 Vde, P.., = 0.5 W, f = 160 MHz) 6 - - 2N1561, 2N1692 (i, = 100 mAdc, V,,, = 15 Vdc, P= 0,4 W, f = 160 MHz) - - Cc * CE out "2N1562 52N1693 5 Power Output Pout Watt Oo = 100 mAdc, Vor = 15 Vdc, Pin = 125 mW, f = 160 MHz) 2N1561, 2N1692 0.5 - - 2N1562, 2N1693 0.4 - - 9-252N1561, 2N1562, 2N1692, 2N1693 (continued) P., POWER OUT (WATTS) P,, POWER OUT (WATTS) P., POWER OUT (WATTS) 0.8 0.6 0.4 0.2 _ oS S 0 2 a 9S t we ne S oo S a 2 eS 2 NS RF Transistors POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus COLLECTOR-EMITTER VOLTAGE 2N1561/2N1692 100 | 2 80 80 = Eve ~ $e --l-- mb. 5 goo es 2 3 Len & ow a 2 40 P, 402 2 Lo g a 3 "| Pix = 125mW_|, 8 5 > f = 160: MHz = T, = 25C 0 beet : 0 5 10 15 Vou, COLLECTOR-EMITTER VOLTAGE (VOLTS) P.,, POWER OUT (WATTS) 1.0 o oo a S b ad rey 2N1562/2N1693 100 ry = 80 ial & = 60 ] oO Ss 5 40 a ao Px = 1 5 20 f = 160 MHz Ty = 25C 0 0 5 10 15 Vox, COLLECTOR-EMITTER VOLTAGE (VOLTS) POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus POWER IN 2N1561/2N1692 100 Vex = 15Vde 80 Lf = 160.MHz T, = 25C s 8 N o 1, COLLECTOR CURRENT (mAdc) Pins POWER IN (mW) 2 S& x, COLLECTOR EFFICIENCY (%) o 25 50 75 10125 150 P,, POWER OUT (WATTS) o S & S a 2 b o re 2N1562/2N1693 Van = --15Vde f = 160 MHz T, = 25C o o a o nN o I, COLLECTOR CURRENT (mAdc) oO 0 2 50 75 100 125 150 Pia, POWER IN (mW) POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus FREQUENCY 2N1561/2N1692 90 D a Ven = 15Vde P,y = 125mW Ty = 25C 1, COLLECTOR CURRENT (mAdc) > 3 0 i 3 80 40 20 0 0 40 60 80 100 160 200 300 400 FREQUENCY (MHz) an. COLLECTOR EFFICIENCY (%) 9-26 P,, POWER OUT (WATTS) 0.8 0.6 0.4 0.2 2N1562/2N1693 = So 00 2 3 a iN) Ven = 15Vde Pry = 125mW. 20 T, = 25C 0 0 0 1 40 60 80 100 160 200 300 400 FREQUENCY (MHz) Ic, COLLECTOR CURRENT (mAdc) > Qo ny COLLECTOR EFFICIENCY (%) vn, COLLECTOR EFFICIENCY (%) xn. COLLECTOR EFFICIENCY (%)