PRELIMINARY PRODUCT SPECIFICATIONS (R) Integrated Circuits Group LH28F640BFE-PBTL90 Flash Memory 64M (4M x 16) (Model No.: LHF64F11) Issue Date: August 29, 2001 sharp LHF64F11 * Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. * When using the products covered herein, please observe the conditions written herein and the precautions outlined in the following paragraphs. In no event shall the company be liable for any damages resulting from failure to strictly adhere to these conditions and precautions. (1) The products covered herein are designed and manufactured for the following application areas. When using the products covered herein for the equipment listed in Paragraph (2), even for the following application areas, be sure to observe the precautions given in Paragraph (2). Never use the products for the equipment listed in Paragraph (3). * Office electronics * Instrumentation and measuring equipment * Machine tools * Audiovisual equipment * Home appliance * Communication equipment other than for trunk lines (2) Those contemplating using the products covered herein for the following equipment which demands high reliability, should first contact a sales representative of the company and then accept responsibility for incorporating into the design fail-safe operation, redundancy, and other appropriate measures for ensuring reliability and safety of the equipment and the overall system. * Control and safety devices for airplanes, trains, automobiles, and other transportation equipment * Mainframe computers * Traffic control systems * Gas leak detectors and automatic cutoff devices * Rescue and security equipment * Other safety devices and safety equipment, etc. (3) Do not use the products covered herein for the following equipment which demands extremely high performance in terms of functionality, reliability, or accuracy. * Aerospace equipment * Communications equipment for trunk lines * Control equipment for the nuclear power industry * Medical equipment related to life support, etc. (4) Please direct all queries and comments regarding the interpretation of the above three Paragraphs to a sales representative of the company. * Please direct all queries regarding the products covered herein to a sales representative of the company. Rev. 2.41 sharp LHF64F11 1 CONTENTS PAGE PAGE 48-Lead TSOP Pinout................................................. 3 Extended Status Register Definition ......................... 15 Pin Descriptions.......................................................... 4 Partition Configuration Register Definition.............. 16 Simultaneous Operation Modes Allowed with Four Planes .................................. 5 Partition Configuration ............................................. 16 1 Electrical Specifications......................................... 17 Memory Map .............................................................. 6 1.1 Absolute Maximum Ratings ........................... 17 Identifier Codes and OTP Address for Read Operation ............................................. 7 Identifier Codes and OTP Address for Read Operation on Partition Configuration........ 7 1.2 Operating Conditions ...................................... 17 1.2.1 Capacitance .............................................. 18 1.2.2 AC Input/Output Test Conditions ............ 18 OTP Block Address Map for OTP Program............... 8 1.2.3 DC Characteristics ................................... 19 Bus Operation............................................................. 9 Command Definitions .............................................. 10 Functions of Block Lock and Block Lock-Down..... 12 Block Locking State Transitions upon Command Write................................................ 12 Block Locking State Transitions upon WP# Transition................................................. 13 1.2.4 AC Characteristics - Read-Only Operations......................... 21 1.2.5 AC Characteristics - Write Operations ................................. 24 1.2.6 Reset Operations ...................................... 26 1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance.................... 27 Status Register Definition......................................... 14 2 Related Document Information.............................. 28 Rev. 2.41 sharp LHF64F11 2 LH28F640BFE-PBTL90 64Mbit (4Mbitx16) Page Mode Dual Work Flash MEMORY 64M density with 16Bit I/O Interface High Performance Reads * 90/35ns 8-Word Page Mode Configurative 4-Plane Dual Work * Flexible Partitioning * Read operations during Block Erase or (Page Buffer) Program * Status Register for Each Partition Low Power Operation * 2.7V Read and Write Operations * VCCQ for Input/Output Power Supply Isolation * Automatic Power Savings Mode Reduces ICCR in Static Mode Enhanced Code + Data Storage * 5s Typical Erase/Program Suspends OTP (One Time Program) Block * 4-Word Factory-Programmed Area * 4-Word User-Programmable Area High Performance Program with Page Buffer * 16-Word Page Buffer * 5s/Word (Typ.) at 12V VPP Operating Temperature 0C to +70C CMOS Process (P-type silicon substrate) Flexible Blocking Architecture * Eight 4K-word Parameter Blocks * One-hundred and twenty-seven 32K-word Main Blocks * Bottom Parameter Location Enhanced Data Protection Features * Individual Block Lock and Block Lock-Down with Zero-Latency * All blocks are locked at power-up or device reset. * Absolute Protection with VPPVPPLK * Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms * 3.0V Low-Power 11s/Word (Typ.) Programming * 12V No Glue Logic 9s/Word (Typ.) Production Programming and 0.5s Erase (Typ.) Cross-Compatible Command Support * Basic Command Set * Common Flash Interface (CFI) Extended Cycling Capability * Minimum 100,000 Block Erase Cycles 48-Lead TSOP ETOXTM* Flash Technology Not designed or rated as radiation hardened The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends battery life for portable applications. The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus eliminating time consuming wait states. Furthermore, its newly configurative partitioning architecture allows flexible dual work operation. The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main Blocks that provide maximum flexibility for safe nonvolatile code and data storage. Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP (One Time Program) block provides an area to store permanent code such as a unique number. * ETOX is a trademark of Intel Corporation. Rev. 2.41 sharp LHF64F11 A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE# RST# VPP WP# A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-LEAD TSOP STANDARD PINOUT 12mm x 20mm TOP VIEW 3 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GND DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# GND CE# A0 Figure 1. 48-Lead TSOP (Normal Bend) Pinout Rev. 2.41 sharp LHF64F11 4 Table 1. Pin Descriptions Symbol Type A0-A21 INPUT Name and Function ADDRESS INPUTS: Inputs for addresses. 64M: A0-A21 DQ0-DQ15 INPUT/ OUTPUT DATA INPUTS/OUTPUTS: Inputs data and commands during CUI (Command User Interface) write cycles, outputs data during memory array, status register, query code, identifier code and partition configuration register code reads. Data pins float to highimpedance (High Z) when the chip or outputs are deselected. Data is internally latched during an erase or program cycle. CE# INPUT CHIP ENABLE: Activates the device's control logic, input buffers, decoders and sense amplifiers. CE#-high (VIH) deselects the device and reduces power consumption to standby levels. RST# INPUT RESET: When low (VIL), RST# resets internal automation and inhibits write operations which provides data protection. RST#-high (VIH) enables normal operation. After power-up or reset mode, the device is automatically set to read array mode. RST# must be low during power-up/down. OE# INPUT OUTPUT ENABLE: Gates the device's outputs during a read cycle. WE# INPUT WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are latched on the rising edge of CE# or WE# (whichever goes high first). WP# INPUT WRITE PROTECT: When WP# is VIL, locked-down blocks cannot be unlocked. Erase or program operation can be executed to the blocks which are not locked and lockeddown. When WP# is VIH, lock-down is disabled. VPP INPUT MONITORING POWER SUPPLY VOLTAGE: VPP is not used for power supply pin. With VPPVPPLK, block erase, full chip erase, (page buffer) program or OTP program cannot be executed and should not be attempted. Applying 12V0.3V to VPP provides fast erasing or fast programming mode. In this mode, VPP is power supply pin. Applying 12V0.3V to VPP during erase/program can only be done for a maximum of 1,000 cycles on each block. VPP may be connected to 12V0.3V for a total of 80 hours maximum. Use of this pin at 12V beyond these limits may reduce block cycling capability or cause permanent damage. VCC SUPPLY DEVICE POWER SUPPLY (2.7V-3.6V): With VCCVLKO, all write attempts to the flash memory are inhibited. Device operations at invalid VCC voltage (see DC Characteristics) produce spurious results and should not be attempted. VCCQ SUPPLY INPUT/OUTPUT POWER SUPPLY (2.7V-3.6V): Power supply for all input/output pins. GND SUPPLY GROUND: Do not float any ground pins. Rev. 2.41 sharp LHF64F11 5 Table 2. Simultaneous Operation Modes Allowed with Four Planes(1, 2) THEN THE MODES ALLOWED IN THE OTHER PARTITION IS: IF ONE PARTITION IS: Read Read Read Array ID/OTP Status Read Word Query Program Page Block OTP Block Full Chip Program Buffer Erase Program Erase Erase Suspend Program Suspend Read Array X X X X X X X X X Read ID/OTP X X X X X X X X X Read Status X X X X X X X X Read Query X X X X X X X X Word Program X X X X X Page Buffer Program X X X X X OTP Program Block Erase X X X X X X X Full Chip Erase X X X Program Suspend X X X X Block Erase Suspend X X X X X X X X NOTES: 1. "X" denotes the operation available. 2. Configurative Partition Dual Work Restrictions: Status register reflects partition state, not WSM (Write State Machine) state - this allows a status register for each partition. Only one partition can be erased or programmed at a time - no command queuing. Commands must be written to an address within the block targeted by that command. Rev. 2.41 sharp LHF64F11 6 BLOCK NUMBER ADDRESS RANGE 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 3F8000H - 3FFFFFH 3F0000H - 3F7FFFH 3E8000H - 3EFFFFH 3E0000H - 3E7FFFH 3D8000H - 3DFFFFH 3D0000H - 3D7FFFH 3C8000H - 3CFFFFH 3C0000H - 3C7FFFH 3B8000H - 3BFFFFH 3B0000H - 3B7FFFH 3A8000H - 3AFFFFH 3A0000H - 3A7FFFH 398000H - 39FFFFH 390000H - 397FFFH 388000H - 38FFFFH 380000H - 387FFFH 378000H - 37FFFFH 370000H - 377FFFH 368000H - 36FFFFH 360000H - 367FFFH 358000H - 35FFFFH 350000H - 357FFFH 348000H - 34FFFFH 340000H - 347FFFH 338000H - 33FFFFH 330000H - 337FFFH 328000H - 32FFFFH 320000H - 327FFFH 318000H - 31FFFFH 310000H - 317FFFH 308000H - 30FFFFH 300000H - 307FFFH 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 2F8000H - 2FFFFFH 2F0000H - 2F7FFFH 2E8000H - 2EFFFFH 2E0000H - 2E7FFFH 2D8000H - 2DFFFFH 2D0000H - 2D7FFFH 2C8000H - 2CFFFFH 2C0000H - 2C7FFFH 2B8000H - 2BFFFFH 2B0000H - 2B7FFFH 2A8000H - 2AFFFFH 2A0000H - 2A7FFFH 298000H - 29FFFFH 290000H - 297FFFH 288000H - 28FFFFH 280000H - 287FFFH 278000H - 27FFFFH 270000H - 277FFFH 268000H - 26FFFFH 260000H - 267FFFH 258000H - 25FFFFH 250000H - 257FFFH 248000H - 24FFFFH 240000H - 247FFFH 238000H - 23FFFFH 230000H - 237FFFH 228000H - 22FFFFH 220000H - 227FFFH 218000H - 21FFFFH 210000H - 217FFFH 208000H - 20FFFFH 200000H - 207FFFH PLANE1 (UNIFORM PLANE) 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 104 103 PLANE0 (PARAMETER PLANE) PLANE2 (UNIFORM PLANE) PLANE3 (UNIFORM PLANE) BLOCK NUMBER ADDRESS RANGE 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 32K-WORD 4K-WORD 4K-WORD 4K-WORD 4K-WORD 4K-WORD 4K-WORD 4K-WORD 4K-WORD 1F8000H - 1FFFFFH 1F0000H - 1F7FFFH 1E8000H - 1EFFFFH 1E0000H - 1E7FFFH 1D8000H - 1DFFFFH 1D0000H - 1D7FFFH 1C8000H - 1CFFFFH 1C0000H - 1C7FFFH 1B8000H - 1BFFFFH 1B0000H - 1B7FFFH 1A8000H - 1AFFFFH 1A0000H - 1A7FFFH 198000H - 19FFFFH 190000H - 197FFFH 188000H - 18FFFFH 180000H - 187FFFH 178000H - 17FFFFH 170000H - 177FFFH 168000H - 16FFFFH 160000H - 167FFFH 158000H - 15FFFFH 150000H - 157FFFH 148000H - 14FFFFH 140000H - 147FFFH 138000H - 13FFFFH 130000H - 137FFFH 128000H - 12FFFFH 120000H - 127FFFH 118000H - 11FFFFH 110000H - 117FFFH 108000H - 10FFFFH 100000H - 107FFFH 0F8000H - 0FFFFFH 0F0000H - 0F7FFFH 0E8000H - 0EFFFFH 0E0000H - 0E7FFFH 0D8000H - 0DFFFFH 0D0000H - 0D7FFFH 0C8000H - 0CFFFFH 0C0000H - 0C7FFFH 0B8000H - 0BFFFFH 0B0000H - 0B7FFFH 0A8000H - 0AFFFFH 0A0000H - 0A7FFFH 098000H - 09FFFFH 090000H - 097FFFH 088000H - 08FFFFH 080000H - 087FFFH 078000H - 07FFFFH 070000H - 077FFFH 068000H - 06FFFFH 060000H - 067FFFH 058000H - 05FFFFH 050000H - 057FFFH 048000H - 04FFFFH 040000H - 047FFFH 038000H - 03FFFFH 030000H - 037FFFH 028000H - 02FFFFH 020000H - 027FFFH 018000H - 01FFFFH 010000H - 017FFFH 008000H - 00FFFFH 007000H - 007FFFH 006000H - 006FFFH 005000H - 005FFFH 004000H - 004FFFH 003000H - 003FFFH 002000H - 002FFFH 001000H - 001FFFH 000000H - 000FFFH Figure 2. Memory Map (Bottom Parameter) Rev. 2.41 sharp LHF64F11 7 Table 3. Identifier Codes and OTP Address for Read Operation Code Address [A15-A0](1) Data [DQ15-DQ0] Notes Manufacturer Code Manufacturer Code 0000H 00B0H Device Code Bottom Parameter Device Code 0001H 00B1H 2 Block Lock Configuration Code Block is Unlocked DQ0 = 0 3 DQ0 = 1 3 DQ1 = 0 3 DQ1 = 1 3 Block Address +2 Block is Locked Block is not Locked-Down Block is Locked-Down Device Configuration Code Partition Configuration Register 0006H PCRC 4 OTP OTP Lock 0080H OTP-LK 5 0081-0088H OTP 6 OTP NOTES: 1. The address A21-A16 are shown in below table for reading the manufacturer, device, lock configuration, device configuration code and OTP data. 2. Bottom parameter device has its parameter blocks in the plane0 (The lowest address). 3. DQ15-DQ2 are reserved for future implementation. 4. PCRC=Partition Configuration Register Code. 5. OTP-LK=OTP Block Lock configuration. 6. OTP=OTP Block data. Table 4. Identifier Codes and OTP Address for Read Operation on Partition Configuration(1) (64M-bit device) Partition Configuration Register (2) Address (64M-bit device) [A21-A16] PCR.10 PCR.9 PCR.8 0 0 0 00H 0 0 1 00H or 10H 0 1 0 00H or 20H 1 0 0 00H or 30H 0 1 1 00H or 10H or 20H 1 1 0 00H or 20H or 30H 1 0 1 00H or 10H or 30H 1 1 1 00H or 10H or 20H or 30H NOTES: 1. The address to read the identifier codes or OTP data is dependent on the partition which is selected when writing the Read Identifier Codes/OTP command (90H). 2. Refer to Table 12 for the partition configuration register. Rev. 2.41 sharp LHF64F11 8 [A21-A0] 000088H Customer Programmable Area 000085H 000084H Factory Programmed Area 000081H 000080H Reserved for Future Implementation (DQ15-DQ2) Customer Programmable Area Lock Bit (DQ1) Factory Programmed Area Lock Bit (DQ0) Figure 3. OTP Block Address Map for OTP Program (The area outside 80H~88H cannot be used.) Rev. 2.41 sharp LHF64F11 9 Table 5. Bus Operation(1, 2) Mode Notes RST# CE# OE# WE# Address VPP DQ0-15 6 VIH VIL VIL VIH X X DOUT Output Disable VIH VIL VIH VIH X X High Z Standby VIH VIH X X X X High Z Read Array Reset 3 VIL X X X X X High Z Read Identifier Codes/OTP 6 VIH VIL VIL VIH See Table 3 and Table 4 X See Table 3 and Table 4 6,7 VIH VIL VIL VIH See Appendix X See Appendix 4,5,6 VIH VIL VIH VIL X X DIN Read Query Write NOTES: 1. Refer to DC Characteristics. When VPPVPPLK, memory contents can be read, but cannot be altered. 2. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2 for VPP. See DC Characteristics for VPPLK and VPPH1/2 voltages. 3. RST# at GND0.2V ensures the lowest power consumption. 4. Command writes involving block erase, (page buffer) program or OTP program are reliably executed when VPP=VPPH1/2 and VCC=2.7V-3.6V. Command writes involving full chip erase are reliably executed when VPP=VPPH1 and VCC=2.7V-3.6V. 5. Refer to Table 6 for valid DIN during a write operation. 6. Never hold OE# low and WE# low at the same timing. 7. Refer to Appendix of LH28F640BF series for more information about query code. Rev. 2.41 sharp LHF64F11 10 Table 6. Command Definitions(11) Bus Cycles Req'd Notes 1 2 Write PA FFH Read Identifier Codes/OTP 2 2,3,4 Write PA 90H Read Query Command Read Array First Bus Cycle Oper (1) Addr (2) Second Bus Cycle Data (3) (1) Addr(2) Data(3) Read IA or OA ID or OD Oper 2 2,3,4 Write PA 98H Read QA QD Read Status Register 2 2,3 Write PA 70H Read PA SRD Clear Status Register 1 2 Write PA 50H Block Erase 2 2,3,5 Write BA 20H Write BA D0H Full Chip Erase 2 2,5,9 Write X 30H Write X D0H Write WA WD Write WA N-1 Program 2 2,3,5,6 Write WA 40H or 10H 4 2,3,5,7 Write WA E8H Block Erase and (Page Buffer) Program Suspend 1 2,8,9 Write PA B0H Block Erase and (Page Buffer) Program Resume 1 2,8,9 Write PA D0H Set Block Lock Bit 2 2 Write BA 60H Write BA 01H Clear Block Lock Bit 2 2,10 Write BA 60H Write BA D0H Page Buffer Program Set Block Lock-down Bit 2 2 Write BA 60H Write BA 2FH OTP Program 2 2,3,9 Write OA C0H Write OA OD Set Partition Configuration Register 2 2,3 Write PCRC 60H Write PCRC 04H NOTES: 1. Bus operations are defined in Table 5. 2. The address which is written at the first bus cycle should be the same as the address which is written at the second bus cycle. X=Any valid address within the device. PA=Address within the selected partition. IA=Identifier codes address (See Table 3 and Table 4). QA=Query codes address. Refer to Appendix of LH28F640BF series for details. BA=Address within the block being erased, set/cleared block lock bit or set block lock-down bit. WA=Address of memory location for the Program command or the first address for the Page Buffer Program command. OA=Address of OTP block to be read or programmed (See Figure 3). PCRC=Partition configuration register code presented on the address A0-A15. 3. ID=Data read from identifier codes. (See Table 3 and Table 4). QD=Data read from query database. Refer to Appendix of LH28F640BF series for details. SRD=Data read from status register. See Table 10 and Table 11 for a description of the status register bits. WD=Data to be programmed at location WA. Data is latched on the rising edge of WE# or CE# (whichever goes high first). OD=Data to be programmed at location OA. Data is latched on the rising edge of WE# or CE# (whichever goes high first). N-1=N is the number of the words to be loaded into a page buffer. 4. Following the Read Identifier Codes/OTP command, read operations access manufacturer code, device code, block lock configuration code, partition configuration register code and the data within OTP block (See Table 3 and Table 4). The Read Query command is available for reading CFI (Common Flash Interface) information. 5. Block erase, full chip erase or (page buffer) program cannot be executed when the selected block is locked. Unlocked block can be erased or programmed when RST# is VIH. 6. Either 40H or 10H are recognized by the CUI (Command User Interface) as the program setup. 7. Following the third bus cycle, inputs the program sequential address and write data of "N" times. Finally, input the any valid address within the target partition to be programmed and the confirm command (D0H). Refer to Appendix of Rev. 2.41 sharp LHF64F11 11 LH28F640BF series for details. 8. If the program operation in one partition is suspended and the erase operation in other partition is also suspended, the suspended program operation should be resumed first, and then the suspended erase operation should be resumed next. 9. Full chip erase and OTP program operations can not be suspended. The OTP Program command can not be accepted while the block erase operation is being suspended. 10. Following the Clear Block Lock Bit command, block which is not locked-down is unlocked when WP# is VIL. When WP# is VIH, lock-down bit is disabled and the selected block is unlocked regardless of lock-down configuration. 11. Commands other than those shown above are reserved by SHARP for future device implementations and should not be used. Rev. 2.41 sharp LHF64F11 12 Table 7. Functions of Block Lock(5) and Block Lock-Down Current State State [000] [001] (3) [011] [100] Erase/Program Allowed (2) WP# DQ1(1) DQ0(1) 0 0 0 Unlocked Yes 0 0 1 Locked No 0 1 1 Locked-down No State Name 1 0 0 Unlocked Yes (3) 1 0 1 Locked No [110](4) 1 1 0 Lock-down Disable Yes [111] 1 1 1 Lock-down Disable No [101] NOTES: 1. DQ0=1: a block is locked; DQ0=0: a block is unlocked. DQ1=1: a block is locked-down; DQ1=0: a block is not locked-down. 2. Erase and program are general terms, respectively, to express: block erase, full chip erase and (page buffer) program operations. 3. At power-up or device reset, all blocks default to locked state and are not locked-down, that is, [001] (WP#=0) or [101] (WP#=1), regardless of the states before power-off or reset operation. 4. When WP# is driven to VIL in [110] state, the state changes to [011] and the blocks are automatically locked. 5. OTP (One Time Program) block has the lock function which is different from those described above. Table 8. Block Locking State Transitions upon Command Write(4) Current State Result after Lock Command Written (Next State) State WP# DQ1 DQ0 Set Lock(1) Clear Lock(1) Set Lock-down(1) [000] 0 0 0 [001] No Change [011](2) [001] 0 0 1 No Change(3) [000] [011] [011] 0 1 1 No Change No Change No Change [100] 1 0 0 [101] No Change [111](2) [101] 1 0 1 No Change [100] [111] [110] 1 1 0 [111] No Change [111](2) [111] 1 1 1 No Change [110] No Change NOTES: 1. "Set Lock" means Set Block Lock Bit command, "Clear Lock" means Clear Block Lock Bit command and "Set Lock-down" means Set Block Lock-Down Bit command. 2. When the Set Block Lock-Down Bit command is written to the unlocked block (DQ0=0), the corresponding block is locked-down and automatically locked at the same time. 3. "No Change" means that the state remains unchanged after the command written. 4. In this state transitions table, assumes that WP# is not changed and fixed VIL or VIH. Rev. 2.41 sharp LHF64F11 13 Table 9. Block Locking State Transitions upon WP# Transition(4) Current State Previous State - Result after WP# Transition (Next State) State WP# DQ1 DQ0 WP#=01(1) WP#=10(1) [000] 0 0 0 [100] - [001] 0 0 1 [101] - [110] - [111] - (2) [110] [011] 0 1 1 - [100] 1 0 0 - [000] - [101] 1 0 1 - [001] - [110] 1 1 0 - [011](3) - [111] 1 1 1 - [011] Other than [110](2) NOTES: 1. "WP#=01" means that WP# is driven to VIH and "WP#=10" means that WP# is driven to VIL. 2. State transition from the current state [011] to the next state depends on the previous state. 3. When WP# is driven to VIL in [110] state, the state changes to [011] and the blocks are automatically locked. 4. In this state transitions table, assumes that lock configuration commands are not written in previous, current and next state. Rev. 2.41 sharp LHF64F11 14 Table 10. Status Register Definition R R R R R R R R 15 14 13 12 11 10 9 8 WSMS BESS BEFCES PBPOPS VPPS PBPSS DPS R 7 6 5 4 3 2 1 0 SR.15 - SR.8 = RESERVED FOR FUTURE ENHANCEMENTS (R) SR.7 = WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy SR.6 = BLOCK ERASE SUSPEND STATUS (BESS) 1 = Block Erase Suspended 0 = Block Erase in Progress/Completed SR.5 = BLOCK ERASE AND FULL CHIP ERASE STATUS (BEFCES) 1 = Error in Block Erase or Full Chip Erase 0 = Successful Block Erase or Full Chip Erase SR.4 = (PAGE BUFFER) PROGRAM AND OTP PROGRAM STATUS (PBPOPS) 1 = Error in (Page Buffer) Program or OTP Program 0 = Successful (Page Buffer) Program or OTP Program SR.3 = VPP STATUS (VPPS) 1 = VPP LOW Detect, Operation Abort 0 = VPP OK SR.2 = (PAGE BUFFER) PROGRAM SUSPEND STATUS (PBPSS) 1 = (Page Buffer) Program Suspended 0 = (Page Buffer) Program in Progress/Completed SR.1 = DEVICE PROTECT STATUS (DPS) 1 = Erase or Program Attempted on a Locked Block, Operation Abort 0 = Unlocked NOTES: Status Register indicates the status of the partition, not WSM (Write State Machine). Even if the SR.7 is "1", the WSM may be occupied by the other partition when the device is set to 2, 3 or 4 partitions configuration. Check SR.7 to determine block erase, full chip erase, (page buffer) program or OTP program completion. SR.6 - SR.1 are invalid while SR.7="0". If both SR.5 and SR.4 are "1"s after a block erase, full chip erase, page buffer program, set/clear block lock bit, set block lock-down bit, set partition configuration register attempt, an improper command sequence was entered. SR.3 does not provide a continuous indication of VPP level. The WSM interrogates and indicates the VPP level only after Block Erase, Full Chip Erase, (Page Buffer) Program or OTP Program command sequences. SR.3 is not guaranteed to report accurate feedback when VPPVPPH1, VPPH2 or VPPLK. SR.1 does not provide a continuous indication of block lock bit. The WSM interrogates the block lock bit only after Block Erase, Full Chip Erase, (Page Buffer) Program or OTP Program command sequences. It informs the system, depending on the attempted operation, if the block lock bit is set. Reading the block lock configuration codes after writing the Read Identifier Codes/OTP command indicates block lock bit status. SR.15 - SR.8 and SR.0 are reserved for future use and should be masked out when polling the status register. SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) Rev. 2.41 sharp LHF64F11 15 Table 11. Extended Status Register Definition R R R R R R R R 15 14 13 12 11 10 9 8 SMS R R R R R R R 7 6 5 4 3 2 1 0 XSR.15-8 = RESERVED FOR FUTURE ENHANCEMENTS (R) XSR.7 = STATE MACHINE STATUS (SMS) 1 = Page Buffer Program available 0 = Page Buffer Program not available NOTES: After issue a Page Buffer Program command (E8H), XSR.7="1" indicates that the entered command is accepted. If XSR.7 is "0", the command is not accepted and a next Page Buffer Program command (E8H) should be issued again to check if page buffer is available or not. XSR.15-8 and XSR.6-0 are reserved for future use and should be masked out when polling the extended status XSR.6-0 = RESERVED FOR FUTURE ENHANCEMENTS (R) register. Rev. 2.41 sharp LHF64F11 16 Table 12. Partition Configuration Register Definition R R R R R PC2 15 14 13 12 11 10 9 8 R R R R R R R R 7 6 5 4 3 2 1 0 PLANE0 PLANE1 PLANE3 0 1 1 PLANE2 PARTITIONING FOR DUAL WORK PARTITION2 PARTITION1 PARTITION0 PC2 PC1PC0 PLANE0 PLANE1 1 1 0 PLANE2 PARTITION2 PARTITION1 PARTITION0 PLANE0 1 0 1 PLANE1 PARTITION2 PARTITION1 PARTITION0 PLANE2 PLANE0 PLANE0 PLANE1 1 1 1 PLANE2 PLANE0 PARTITION3 PARTITION2 PARTITION1 PARTITION0 PLANE3 PLANE1 PLANE1 PLANE2 PLANE3 PCR.15-11 and PCR.7-0 are reserved for future use and should be masked out when polling the partition configuration register. PARTITION0 PARTITION1 1 0 0 See Figure 4 for the detail on partition configuration. PARTITION0 PLANE0 PLANE2 0 1 0 PLANE3 PARTITION1 NOTES: After power-up or device reset, PCR10-8 (PC2-0) is set to "001" in a bottom parameter device and "100" in a top parameter device. PARTITION0 PLANE1 PLANE2 0 0 1 PLANE3 PARTITION1 PLANE0 PLANE1 PLANE2 0 0 0 PARTITIONING FOR DUAL WORK PARTITION0 PLANE3 PC2 PC1PC0 PCR.7-0 = RESERVED FOR FUTURE ENHANCEMENTS (R) PLANE3 PCR.10-8 = PARTITION CONFIGURATION (PC2-0) 000 = No partitioning. Dual Work is not allowed. 001 = Plane1-3 are merged into one partition. (default in a bottom parameter device) 010 = Plane 0-1 and Plane2-3 are merged into one partition respectively. 100 = Plane 0-2 are merged into one partition. (default in a top parameter device) 011 = Plane 2-3 are merged into one partition. There are three partitions in this configuration. Dual work operation is available between any two partitions. 110 = Plane 0-1 are merged into one partition. There are three partitions in this configuration. Dual work operation is available between any two partitions. 101 = Plane 1-2 are merged into one partition. There are three partitions in this configuration. Dual work operation is available between any two partitions. PC0 111 = There are four partitions in this configuration. Each plane corresponds to each partition respectively. Dual work operation is available between any two partitions. PLANE3 PCR.15-11 = RESERVED FOR FUTURE ENHANCEMENTS (R) PC1 Figure 4. Partition Configuration Rev. 2.41 sharp LHF64F11 1 Electrical Specifications 17 *WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability. 1.1 Absolute Maximum Ratings* Operating Temperature During Read, Erase and Program ...... 0C to +70C (1) NOTES: 1. Operating temperature is for commercial temperature product defined by this specification. 2. All specified voltages are with respect to GND. Minimum DC voltage is -0.5V on input/output pins and -0.2V on VCC and VPP pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on input/output pins and VCC is VCC+0.5V which, during transitions, may overshoot to VCC +2.0V for periods <20ns. 3. Maximum DC voltage on VPP may overshoot to +13.0V for periods <20ns. 4. VPP erase/program voltage is normally 2.7V-3.6V. Applying 11.7V-12.3V to Vpp during erase/program can be done for a maximum of 1,000 cycles on the main blocks and 1,000 cycles on the parameter blocks. VPP may be connected to 11.7V-12.3V for a total of 80 hours maximum. 5. Output shorted for no more than one second. No more than one output shorted at a time. Storage Temperature During under Bias............................... -10C to +80C During non Bias................................ -65C to +125C Voltage On Any Pin (except VCC and VPP).............. -0.5V to VCC+0.5V (2) VCC and VCCQ Supply Voltage .......... -0.2V to +3.9V (2) VPP Supply Voltage ...................... -0.2V to 12.6V (2, 3, 4) Output Short Circuit Current ........................... 100mA (5) 1.2 Operating Conditions Parameter Symbol Min. Typ. Max. Unit TA 0 +25 +70 C VCC Supply Voltage VCC 2.7 3.0 3.6 V 1 I/O Supply Voltage VCCQ 2.7 3.0 3.6 V 1 VPP Voltage when Used as a Logic Control VPPH1 1.65 3.0 3.6 V 1 VPP Supply Voltage VPPH2 11.7 12 12.3 V 1, 2 Operating Temperature Main Block Erase Cycling: VPP=3.0V 100,000 Cycles Parameter Block Erase Cycling: VPP=3.0V 100,000 Cycles Main Block Erase Cycling: VPP=12V, 80 hrs. 1,000 Cycles Parameter Block Erase Cycling: VPP=12V, 80 hrs. 1,000 Cycles 80 Hours Maximum VPP hours at 12V Notes NOTES: 1. See DC Characteristics tables for voltage range-specific specification. 2. Applying VPP=11.7V-12.3V during a erase or program can be done for a maximum of 1,000 cycles on the main blocks and 1,000 cycles on the parameter blocks. A permanent connection to VPP=11.7V-12.3V is not allowed and can cause damage to the device. Rev. 2.41 sharp LHF64F11 18 1.2.1 Capacitance(1) (TA=+25C, f=1MHz) Parameter Symbol Condition Typ. Max. Unit CIN VIN=0.0V 6 8 pF COUT VOUT=0.0V 10 12 pF Input Capacitance Output Capacitance Min. NOTE: 1. Sampled, not 100% tested. 1.2.2 AC Input/Output Test Conditions VCCQ INPUT VCCQ/2 TEST POINTS VCCQ/2 OUTPUT 0.0 AC test inputs are driven at VCCQ(min) for a Logic "1" and 0.0V for a Logic "0". Input timing begins, and output timing ends at VCCQ/2. Input rise and fall times (10% to 90%) < 5ns. Worst case speed conditions are when VCC=VCC(min). Figure 5. Transient Input/Output Reference Waveform for VCC=2.7V-3.6V Table 13. Configuration Capacitance Loading Value VCCQ(min)/2 1N914 DEVICE UNDER TEST CL Includes Jig Capacitances. RL=3.3k Test Configuration CL (pF) VCC=2.7V-3.6V 50 OUT CL Figure 6. Transient Equivalent Testing Load Circuit Rev. 2.41 sharp LHF64F11 19 1.2.3 DC Characteristics VCC=2.7V-3.6V Symbol Parameter Notes Min. Typ. Max. Unit Test Conditions VCC=VCCMax., VCCQ=VCCQMax., VIN/VOUT=VCCQ or GND ILI Input Load Current 1 -1.0 +1.0 A ILO Output Leakage Current 1 -1.0 +1.0 A ICCS VCC Standby Current 4 20 A 1,4 4 20 A VCC=VCCMax., CE#= GND0.2V, WP#=VCCQ or GND 1 4 20 A RST#=GND0.2V Average VCC Read Current Normal Mode 1,7 15 25 mA Average VCC Read 8 Word Read Current Page Mode 1,7 5 10 mA VCC=VCCMax., CE#=VIL, OE#=VIH, f=5MHz 1,5,7 20 60 mA VPP=VPPH1 1,5,7 10 20 mA VPP=VPPH2 1,5,7 10 30 mA VPP=VPPH1 1,5,7 10 30 mA VPP=VPPH2 ICCAS VCC Automatic Power Savings Current ICCD VCC Reset Power-Down Current ICCR 1 VCC=VCCMax., CE#=RST#= VCCQ0.2V, WP#=VCCQ or GND ICCW VCC (Page Buffer) Program Current ICCE VCC Block Erase, Full Chip Erase Current ICCWS ICCES VCC (Page Buffer) Program or Block Erase Suspend Current 1,2,7 10 200 A CE#=VIH IPPS IPPR VPP Standby or Read Current 1,6,7 2 5 A VPPVCC IPPW VPP (Page Buffer) Program Current 1,5,6,7 2 5 A VPP=VPPH1 1,5,6,7 10 30 mA VPP=VPPH2 IPPE VPP Block Erase, Full Chip Erase Current 1,5,6,7 2 5 A VPP=VPPH1 1,5,6,7 5 15 mA VPP=VPPH2 IPPWS VPP (Page Buffer) Program Suspend Current 1,6,7 2 5 A VPP=VPPH1 1,6,7 10 200 A VPP=VPPH2 Rev. 2.41 sharp LHF64F11 20 DC Characteristics (Continued) VCC=2.7V-3.6V Symbol Parameter Notes Min. Typ. Max. Unit Test Conditions 1,6,7 2 5 A VPP=VPPH1 1,6,7 10 200 A VPP=VPPH2 -0.4 0.4 V VCCQ -0.4 VCCQ + 0.4 V IPPES VPP Block Erase Suspend Current VIL Input Low Voltage 5 VIH Input High Voltage 5 VOL Output Low Voltage 5 VOH Output High Voltage 5 VPPLK VPP Lockout during Normal Operations VPPH1 VPP during Block Erase, Full Chip Erase, (Page Buffer) Program or OTP Program Operations 6 1.65 VPPH2 VPP during Block Erase, (Page Buffer) Program or OTP Program Operations 6 11.7 VLKO VCC Lockout Voltage 0.2 VCCQ -0.2 3,5,6 1.5 V VCC=VCCMin., VCCQ=VCCQMin., IOL=100A V VCC=VCCMin., VCCQ=VCCQMin., IOH=-100A 0.4 V 3.0 3.6 V 12 12.3 V V NOTES: 1. All currents are in RMS unless otherwise noted. Typical values are the reference values at VCC=3.0V and TA=+25C unless VCC is specified. 2. ICCWS and ICCES are specified with the device de-selected. If read or (page buffer) program while in block erase suspend mode, the device's current draw is the sum of ICCWS or ICCES and ICCR or ICCW, respectively. 3. Block erase, full chip erase, (page buffer) program and OTP program are inhibited when VPPVPPLK, and not guaranteed in the range between VPPLK(max.) and VPPH1(min.), between VPPH1(max.) and VPPH2(min.) and above VPPH2(max.). 4. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle completion. Standard address access timings (tAVQV) provide new data when addresses are changed. 5. Sampled, not 100% tested. 6. VPP is not used for power supply pin. With VPPVPPLK, block erase, full chip erase, (page buffer) program and OTP program cannot be executed and should not be attempted. Applying 12V0.3V to VPP provides fast erasing or fast programming mode. In this mode, VPP is power supply pin and supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace widths and layout considerations given to the VCC power bus. Applying 12V0.3V to VPP during erase/program can only be done for a maximum of 1,000 cycles on each block. VPP may be connected to 12V0.3V for a total of 80 hours maximum. 7. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane. Rev. 2.41 sharp LHF64F11 21 1.2.4 AC Characteristics - Read-Only Operations(1) VCC=2.7V-3.6V, TA=0C to +70C Symbol Parameter Notes Min. Max. Unit tAVAV Read Cycle Time tAVQV Address to Output Delay tELQV CE# to Output Delay tAPA Page Address Access Time tGLQV OE# to Output Delay tPHQV RST# High to Output Delay tEHQZ, tGHQZ CE# or OE# to Output in High Z, Whichever Occurs First 2 tELQX CE# to Output in Low Z 2 0 ns tGLQX OE# to Output in Low Z 2 0 ns tOH Output Hold from First Occurring Address, CE# or OE# change 2 0 ns 90 3 3 ns 90 ns 90 ns 35 ns 20 ns 150 ns 20 ns NOTES: 1. See AC input/output reference waveform for timing measurements and maximum allowable input slew rate. 2. Sampled, not 100% tested. 3. OE# may be delayed up to tELQV tGLQV after the falling edge of CE# without impact to tELQV. Rev. 2.41 sharp LHF64F11 VIH A A21-0 (A) 20-0 (A) 22 VALID ADDRESS VIL tAVQV tEHQZ tGHQZ VIH CE# (E) VIL tELQV VIH OE# (G) VIL VIH WE# (W) VIL tGLQV tGLQX tELQX VOH DQ15-0 (D/Q) High Z tOH VALID OUTPUT VOL tPHQV RST# (P) VIH VIL Figure 7. AC Waveform for Single Asynchronous Read Operations from Status Register, Identifier Codes, OTP Block or Query Code Rev. 2.41 sharp LHF64F11 AA21-3 (A) 20-3(A) VIH 23 VALID ADDRESS VIL tAVQV A2-0 (A) CE# (E) VIH VALID ADDRESS VIL VALID ADDRESS VALID ADDRESS VALID ADDRESS VIH VIL tELQV OE# (G) WE# (W) tEHQZ tGHQZ VIH VIL VIH tGLQV VIL tGLQX tAPA tELQX DQ15-0 (D/Q) VOH High Z VALID OUTPUT VOL VALID OUTPUT tOH VALID OUTPUT VALID OUTPUT tPHQV RST# (P) VIH VIL Figure 8. AC Waveform for Asynchronous Page Mode Read Operations from Main Blocks or Parameter Blocks Rev. 2.41 sharp LHF64F11 24 1.2.5 AC Characteristics - Write Operations(1), (2) VCC=2.7V-3.6V, TA=0C to +70C Symbol Parameter tAVAV Write Cycle Time tPHWL (tPHEL) RST# High Recovery to WE# (CE#) Going Low tELWL (tWLEL) Notes Min. Max. Unit 90 ns 3 150 ns CE# (WE#) Setup to WE# (CE#) Going Low 4 0 ns tWLWH (tELEH) WE# (CE#) Pulse Width 4 60 ns tDVWH (tDVEH) Data Setup to WE# (CE#) Going High 8 40 ns tAVWH (tAVEH) Address Setup to WE# (CE#) Going High 8 50 ns tWHEH (tEHWH) CE# (WE#) Hold from WE# (CE#) High 0 ns tWHDX (tEHDX) Data Hold from WE# (CE#) High 0 ns tWHAX (tEHAX) Address Hold from WE# (CE#) High 0 ns tWHWL (tEHEL) WE# (CE#) Pulse Width High 5 30 ns tSHWH (tSHEH) WP# High Setup to WE# (CE#) Going High 3 0 ns tVVWH (tVVEH) VPP Setup to WE# (CE#) Going High 3 200 ns tWHGL (tEHGL) Write Recovery before Read 30 ns tQVSL WP# High Hold from Valid SRD 3, 6 0 ns tQVVL VPP Hold from Valid SRD 3, 6 0 ns tWHR0 (tEHR0) WE# (CE#) High to SR.7 Going "0" 3, 7 tAVQV+ 50 ns NOTES: 1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and OTP program operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations. 2. A write operation can be initiated and terminated with either CE# or WE#. 3. Sampled, not 100% tested. 4. Write pulse width (tWP) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of CE# or WE# (whichever goes high first). Hence, tWP=tWLWH=tELEH=tWLEH=tELWH. 5. Write pulse width high (tWPH) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling edge of CE# or WE# (whichever goes low last). Hence, tWPH=tWHWL=tEHEL=tWHEL=tEHWL. 6. VPP should be held at VPP=VPPH1/2 until determination of block erase, (page buffer) program or OTP program success (SR.1/3/4/5=0) and held at VPP=VPPH1 until determination of full chip erase success (SR.1/3/5=0). 7. tWHR0 (tEHR0) after the Read Query or Read Identifier Codes/OTP command=tAVQV+100ns. 8. Refer to Table 6 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock bit configuration. Rev. 2.41 sharp LHF64F11 NOTE 1 (A) AA21-0 20-0(A) VIH VIL NOTE 2 NOTE 3 VALID ADDRESS VALID ADDRESS tAVAV CE# (E) NOTES 5, 6 VIL tWHEH (tEHWH) tWHGL (tEHGL) NOTES 5, 6 VIH VIL tWHWL (tEHEL) VIH VIL tWLWH (tELEH ) DQ15-0 (D/Q) NOTE 5 VALID ADDRESS tAVWH (tAVEH) VIH tPHWL (tPHEL) WE# (W) NOTE 4 tWHAX (tEHAX) tELWL (tWLEL) OE# (G) 25 tWHQV1,2,3 (tEHQV1,2,3) tWHDX (tEHDX) tDVWH (tDVEH) VIH VIL DATA IN VALID SRD DATA IN tWHR0 (tEHR0) SR.7 (R) "1" "0" RST# (P) WP# (S) VIH VIL tSHWH (tSHEH) tQVSL tVVWH (tVVEH) tQVVL VIH VIL VPPH1,2 VPP (V) VPPLK VIL NOTES: 1. VCC power-up and standby. 2. Write each first cycle command. 3. Write each second cycle command or valid address and data. 4. Automated erase or program delay. 5. Read status register data. 6. For read operation, OE# and CE# must be driven active, and WE# de-asserted. Figure 9. AC Waveform for Write Operations Rev. 2.41 sharp LHF64F11 26 1.2.6 Reset Operations tPHQV RST# VIH (P) VIL V DQ15-0 (D/Q) OH VOL tPLPH High Z VALID OUTPUT (A) Reset during Read Array Mode SR.7="1" tPLRH RST# VIH VIL (P) V DQ15-0 (D/Q) OH VOL ABORT COMPLETE tPHQV tPLPH High Z VALID OUTPUT (B) Reset during Erase or Program Mode VCC(min) VCC tVHQV GND t2VPH RST# (P) tPHQV VIH VIL V DQ15-0 (D/Q) OH VOL High Z VALID OUTPUT (C) RST# rising timing Figure 10. AC Waveform for Reset Operations Reset AC Specifications (VCC=2.7V-3.6V, TA=0C to +70C) Symbol Parameter Notes Min. 100 tPLPH RST# Low to Reset during Read (RST# should be low during power-up.) 1, 2, 3 tPLRH RST# Low to Reset during Erase or Program 1, 3, 4 t2VPH VCC 2.7V to RST# High 1, 3, 5 tVHQV VCC 2.7V to Output Delay 3 Max. Unit ns 22 100 s ns 1 ms NOTES: 1. A reset time, tPHQV, is required from the later of SR.7 going "1" or RST# going high until outputs are valid. Refer to AC Characteristics - Read-Only Operations for tPHQV. 2. tPLPH is <100ns the device may still reset but this is not guaranteed. 3. Sampled, not 100% tested. 4. If RST# asserted while a block erase, full chip erase, (page buffer) program or OTP program operation is not executing, the reset will complete within 100ns. 5. When the device power-up, holding RST# low minimum 100ns is required after VCC has been in predefined range and also has been in stable there. Rev. 2.41 sharp LHF64F11 27 1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance(3) VCC=2.7V-3.6V, TA=0C to +70C Symbol Parameter Page Buffer Command is Notes Used or not Used VPP=VPPH1 (In System) Min. Typ.(1) VPP=VPPH2 (In Manufacturing) Max. (2) Min. Typ.(1) Max. Unit (2) tWPB 4K-Word Parameter Block Program Time 2 Not Used 0.05 0.3 0.04 0.12 s 2 Used 0.03 0.12 0.02 0.06 s tWMB 32K-Word Main Block Program Time 2 Not Used 0.38 2.4 0.31 1.0 s 2 Used 0.24 1.0 0.17 0.5 s tWHQV1/ tEHQV1 Word Program Time 2 Not Used 11 200 9 185 s 2 Used 7 100 5 90 s tWHOV1/ tEHOV1 OTP Program Time 2 Not Used 36 400 27 185 s tWHQV2/ tEHQV2 4K-Word Parameter Block Erase Time 2 - 0.3 4 0.2 4 s tWHQV3/ tEHQV3 32K-Word Main Block Erase Time 2 - 0.6 5 0.5 5 s Full Chip Erase Time 2 80 700 66 700 s tWHRH1/ tEHRH1 (Page Buffer) Program Suspend Latency Time to Read 4 - 5 10 5 10 s tWHRH2/ tEHRH2 Block Erase Suspend Latency Time to Read 4 - 5 20 5 20 s tERES Latency Time from Block Erase Resume Command to Block Erase Suspend Command 5 - 500 s 500 NOTES: 1. Typical values measured at VCC=3.0V, VPP=3.0V or 12V, and TA=+25C. Assumes corresponding lock bits are not set. Subject to change based on device characterization. 2. Excludes external system-level overhead. 3. Sampled, but not 100% tested. 4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1". 5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than tERES and its sequence is repeated, the block erase operation may not be finished. Rev. 2.41 sharp LHF64F11 28 2 Related Document Information(1) Document No. FUM00701 Document Name LH28F640BF series Appendix NOTE: 1. International customers should contact their local SHARP or distribution sales offices. Rev. 2.41 sharp i A-1 RECOMMENDED OPERATING CONDITIONS A-1.1 At Device Power-Up AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not operate correctly. VCC(min) VCC GND tVR t2VPH tPHQV VIH RP# (P) (RST#) VCCW *1 (V) VIL VCCWH1/2 (VPPH1/2) GND (VPP) tR or tF tR or tF tAVQV VIH Valid Address ADDRESS (A) VIL tF tR tELQV VIH CE# (E) VIL VIH WE# (W) VIL tF tR tGLQV VIH OE# (G) VIL VIH WP# (S) VIL VOH DATA (D/Q) VOL High Z Valid Output *1 To prevent the unwanted writes, system designers should consider the design, which applies VCCW (VPP) to 0V during read operations and VCCWH1/2 (VPPH1/2) during write or erase operations. See the application note AP-007-SW-E for details. Figure A-1. AC Timing at Device Power-Up For the AC specifications tVR, tR, tF in the figure, refer to the next page. See the "ELECTRICAL SPECIFICATIONS" described in specifications for the supply voltage range, the operating temperature and the AC specifications not shown in the next page. Rev. 1.10 sharp ii A-1.1.1 Rise and Fall Time Symbol Parameter Notes Min. Max. Unit 1 0.5 30000 s/V tVR VCC Rise Time tR Input Signal Rise Time 1, 2 1 s/V tF Input Signal Fall Time 1, 2 1 s/V NOTES: 1. Sampled, not 100% tested. 2. This specification is applied for not only the device power-up but also the normal operations. Rev. 1.10 sharp iii A-1.2 Glitch Noises Do not input the glitch noises which are below VIH (Min.) or above VIL (Max.) on address, data, reset, and control signals, as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure A-2 (a). Input Signal Input Signal VIH (Min.) VIH (Min.) VIL (Max.) VIL (Max.) Input Signal Input Signal (a) Acceptable Glitch Noises (b) NOT Acceptable Glitch Noises Figure A-2. Waveform for Glitch Noises See the "DC CHARACTERISTICS" described in specifications for VIH (Min.) and VIL (Max.). Rev. 1.10 sharp iv A-2 RELATED DOCUMENT INFORMATION(1) Document No. Document Name AP-001-SD-E Flash Memory Family Software Drivers AP-006-PT-E Data Protection Method of SHARP Flash Memory AP-007-SW-E RP#, VPP Electric Potential Switching Circuit NOTE: 1. International customers should contact their local SHARP or distribution sales office. Rev. 1.10 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited Warranty for SHARP's product warranty. The Limited Warranty is in lieu, and exclusive of, all other warranties, express or implied. ALL EXPRESS AND IMPLIED WARRANTIES, INCLUDING THE WARRANTIES OF MERCHANTABILITY, FITNESS FOR USE AND FITNESS FOR A PARTICULAR PURPOSE, ARE SPECIFICALLY EXCLUDED. In no event will SHARP be liable, or in any way responsible, for any incidental or consequential economic or property damage. 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