Semiconductor Group 508
SIPMOS® Power Transistor BUZ 205
Maximum Ratings
Type VDS IDRDS (on) Package 1) Ordering Code
BUZ 205 400 V 6.0 A 1.0 Ω TO-220 AB C67078-A1401-A2
Parameter Symbol Values Unit
Continuous drain current, TC = 35 ˚C ID6.0 A
Pulsed drain current, TC = 25 ˚C ID puls 24
Drain-source voltage VDS 400 V
Drain-gate voltage, RGS = 20 kΩVDGR 400
Gate-source voltage VGS ± 20
Power dissipation, TC = 25 ˚C Ptot 75 W
Operating and storage temperature range Tj, Tstg – 55 ... + 150 ˚C
Thermal resistance, chip-case Rth JC ≤ 1.67 K/W
DIN humidity category, DIN 40 040 E–
IEC climatic category, DIN IEC 68-1 55/150/56
●N channel
●Enhancement mode
●FREDFET
1) See chapter Package Outlines.
Semiconductor Group 509
BUZ 205
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA V(BR) DSS 400 – – V
Gate threshold voltage
VGS = VDS ,ID = 1 mA VGS (th) 2.1 4.0 4.0
Zero gate voltage drain current
VDS = 400 V, VGS = 0 V
Tj = 25 ˚C
Tj = 125 ˚C
IDSS
–
–20
100 250
1000
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V IGSS – 10 100 nA
Drain-source on-resistance
VGS = 10 V, ID = 4.0 A RDS (on) – 0.9 1.0 Ω
Dynamic characteristics
Forward transconductance
VDS ≥ 2 x ID x RDS(on)max ,ID = 4.0 A gfs 1.7 2.9 – S
Input capacitance
VGS = 0 V, VDS = 25 V, f= 1 MHz Ciss – 1500 2000 pF
Output capacitance
VGS = 0 V, VDS = 25 V, f= 1 MHz Coss – 120 180
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f= 1 MHz Crss –3560
Turn-on time ton , (ton = td (on) + tr)
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS =50Ωt
d (on) – 3045ns
t
r–4060
Turn-off time toff , (toff = td (off) + tf)
VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS =50Ωt
d (off) – 110 140
tf–5065
Semiconductor Group 510
BUZ 205
Reverse diode
Continuous reverse drain current
TC = 25 ˚C IS– – 6.0 A
Pulsed reverse drain current
TC = 25 ˚C ISM ––24
Diode forward on-voltage
IS = 12 A, VGS = 0 V VSD – 1.3 1.6 V
Reverse recovery time
VR = 100 V, IF = IDR , diF/dt = 100 A/µstrr – 180 250 ns
Reverse recovery charge
VR = 100 V, IF = IDR , diF/dt = 100 A/µsQrr – 0.65 1.2 µC
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Semiconductor Group 511
BUZ 205
Characteristics at Tj = 25 ˚C, unless otherwise specified.
Total power dissipation
Ptot = f (TC)Typ. output characteristics
ID = f (VDS)
parameter: tp = 80 µs
Safe operating area
ID = f (VDS)
parameter: D= 0.01, TC = 25 ˚C
Typ. transfer characteristics
ID=f (VGS)
parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group 512
BUZ 205
Typ. drain-source on-resistance
RDS (on) =f (ID)
parameter: VGS
Typ. forward transconductance
gfs =f(ID)
parameter: tp = 80 µs
Drain-source on-resistance
RDS (on) =f (Tj)
parameter: ID = 4.0 A, VGS = 10 V, (spread)
Gate threshold voltage
VGS (th) = f (Tj)
parameter: VGS = VDS ,ID = 1 mA, (spread)
Semiconductor Group 513
BUZ 205
Typ. capacitances
C=f (VDS)
parameter: VGS = 0 V, f = 1 MHz
Forward characteristics of reverse diode
IF=f(VSD)
parameter: tp = 80 µs, Tj
Drain current
ID=f(TC)
parameter: VGS ≥ 10 V
Transient thermal impedance
Z th JC = f (tp)
parameter: D = tp / T
