HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features * * * * * High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25C) Item Symbol Rated Value Units Forward current IF 200 mA Reverse voltage VR 3 V Operating temperature Topr -20 to +85 C Storage temperature Tstg -40 to +100 C 245 HE8807SG/FL Optical and Electrical Characteristics (TC = 25C) Item Optical output power HE8807SG HE8807FL Symbol Min Typ Max Units Test Conditions PO 10 20 -- mW I F = 150 mA 0.5 1.0 -- PF* 1 I F = 20 mA Peak wavelength p 800 880 900 nm I F = 150 mA Spectral width -- 30 -- nm I F = 150 mA Forward voltage VF -- 1.7 2.3 V I F = 150 mA Reverse current IR -- -- 100 A VR = 3 V Capacitance Ct -- 10 -- pF VR = 0 V, f = 1 MHz Rise time tr -- 20 -- ns I F = 50 mA Fall time tf -- 20 -- ns I F = 50 mA Note: 1. PF specification: The optical output within 9 degrees of the acceptance angle. Typical Characteristic Curves 246 HE8807SG/FL Typical Characteristic Curves (cont) 247 HE8807SG/FL Typical Characteristic Curves (cont) 248 HE8807SG/FL Typical Characteristic Curves (cont) 249