SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 - (Volts) - (Volts) IC/IB =10 0.6 0.6 0.2 0 0.1 1 1.4 0.01 10 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100C +25C -55C 1.6 VCE=2V -55C +25C +100C +175C 1.6 1.5K 1K 0.8 0.6 500 IC/IB=100 0 0.01 0.1 V - (Volts) 1.4 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation Tamb=25C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 C MIN. UNIT CONDITIONS. V IC=100A V(BR)CEO 120 V IC=10mA* V(BR)EBO 5 V IE=100A 0.4 0.01 0.1 1 10 10 VCE=2V 1.0 0.8 0.1 0.6 0.4 DC 1s 100ms 10ms 1ms 100us 0.2 1 5 120 VBE(sat) v IC 0.1 VEBO SYMBOL hFE v IC 0.01 V Emitter-Base Voltage V(BR)CBO 1 0 120 Breakdown Voltages IC - Collector Current (Amps) 1.2 0 120 PARAMETER IC - Collector Current (Amps) -55C +25C +100C +175C 0.01 1 10 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area 3 - 226 V VCBO VCEO 1.0 0 1.6 UNIT 1.2 10 1 VALUE ELECTRICAL CHARACTERISTICS (at Tamb = 25C) 0.2 0 SYMBOL Collector-Base Voltage 0.6 h 0.2 C Collector-Emitter Voltage 0.8 V 0.4 - (Volts) 1.0 - Typical Gain 1.4 1.2 E B PARAMETER 0.2 0.01 C ABSOLUTE MAXIMUM RATINGS. 0.4 0 - Normalised Gain IC/IB=100 V V 0.4 h -55C +25C +100C +175C Tamb=25C IC/IB=100 0.8 FZT694B ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B 1000 TYP. MAX. Collector Cut-Off Current ICBO 0.1 A VCB=100V Emitter Cut-Off Current IEBO 0.1 A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 130 Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 9 pF VCB=10V, f=1MHz Switching Times ton toff 80 2900 ns ns IC=100mA, IB!=10mA IB2=10mA, VCC=50V IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 225 IC=50mA, VCE=5V f=50MHz SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 - (Volts) - (Volts) IC/IB =10 0.6 0.6 0.2 0 0.1 1 1.4 0.01 10 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100C +25C -55C 1.6 VCE=2V -55C +25C +100C +175C 1.6 1.5K 1K 0.8 0.6 500 IC/IB=100 0 0.01 0.1 V - (Volts) 1.4 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation Tamb=25C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 C MIN. UNIT CONDITIONS. V IC=100A V(BR)CEO 120 V IC=10mA* V(BR)EBO 5 V IE=100A 0.4 0.01 0.1 1 10 10 VCE=2V 1.0 0.8 0.1 0.6 0.4 DC 1s 100ms 10ms 1ms 100us 0.2 1 5 120 VBE(sat) v IC 0.1 VEBO SYMBOL hFE v IC 0.01 V Emitter-Base Voltage V(BR)CBO 1 0 120 Breakdown Voltages IC - Collector Current (Amps) 1.2 0 120 PARAMETER IC - Collector Current (Amps) -55C +25C +100C +175C 0.01 1 10 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) VBE(on) v IC Safe Operating Area 3 - 226 V VCBO VCEO 1.0 0 1.6 UNIT 1.2 10 1 VALUE ELECTRICAL CHARACTERISTICS (at Tamb = 25C) 0.2 0 SYMBOL Collector-Base Voltage 0.6 h 0.2 C Collector-Emitter Voltage 0.8 V 0.4 - (Volts) 1.0 - Typical Gain 1.4 1.2 E B PARAMETER 0.2 0.01 C ABSOLUTE MAXIMUM RATINGS. 0.4 0 - Normalised Gain IC/IB=100 V V 0.4 h -55C +25C +100C +175C Tamb=25C IC/IB=100 0.8 FZT694B ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B 1000 TYP. MAX. Collector Cut-Off Current ICBO 0.1 A VCB=100V Emitter Cut-Off Current IEBO 0.1 A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 130 Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 9 pF VCB=10V, f=1MHz Switching Times ton toff 80 2900 ns ns IC=100mA, IB!=10mA IB2=10mA, VCC=50V IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 225 IC=50mA, VCE=5V f=50MHz