TEXAS INSTR fOPTO} be DE Bscu172 OO3b657 Q I a _ SS61726 TEXAS INSTR COPTO) 62C 36657 ye | BUX80, BUX81 N-P-N SILICON POWER TRANSISTORS ~ 33-13 NOTE 1: absolute maximum ratings at 25C case temperature (unless otherwise noted} OCTOBER 1982 REVISED OCTOBER 1984 @ 150 W at 25C Case Temperature @ 104A Continuous Collector Current @ 15 A Peak Collector Current - @ Series Features High-Voltage and Peak Current Ratings, Low Saturation Voltages, and a High Degree of Electrical Robustness @ Designed for Switching-Mode Power Supplies, CRT Scanning, Inverters, and Other Industrial Applications Where Rapid Switching of Inductive Loads is Necessary ' . device schematic TO-3 PACKAGE THE COLLECTOR !S IN ELECTRICAL CONTACT WITH THE CASE BUX80 BUX81 lg = current current current current (see c= These values apply for ty, < 2 ms, duty cycle <10%. D @ 2 > a > = ca x _- a > | a 4 Q a = Qa mam a a 1283 | TEXAS wy 3-61 INSTRUMENTS POST OFFICE BOX 225012 DALLAS. TEXAS 75265 -TEXAS INSTR {OPTO} be DE Pesei72 ooaesa ay 9 HN coat 8861726 TEXAS INSTR COPTO) ga 36658 ! BUX80, BUX81 . 7733-/3 N-P-N SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BUX60 BUXB1 UNIT MIN TYP MAX | MIN TYP MAX VCERIsus} See Nove 2 * 500 500 CE = IcES VcE(sat) VBE(sat) CE = NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tw = 300 us, duty cycla = 2%. 4. These parameters sre measured with voltage-sensing contacts separated from the current-carrying contacts located within 3,2 mm (0.125 inch} from the device body. 5. To obtain fy, the [hfe] response is extrapolated at the rate of 6 dB per octave from f = 1 MHz to the frequency at which Ihfel = 1. thermal characteristics [PARAMETER | MIN TYP MAX | UNIT | [ Roc | 1.17 | C | resistive-load switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX | UNIT = Ic = 8A, Voc = 260V, Ig1= 1A, Iga = ~2A, Te = 25C 35 = 4 See Figure 1 Tos SC 08 a qd ANd xng ng xag Mada ag @ s. oO | a I t wy 3-62 EXAS 1263 INSTRUMENTS | POST OFFICE 80% 225012 @ DALLAS. TEXAS 75265. j + =TEXAS INSTR COPTOF Ge DE sde1726 On36659 43 i 1263 te fia 8961726 TEXAS INSTR COPTOD 62C 36659 OD | eee BUX80, BUX81' Yoon 682 NOTES: A. B c. . Waveforms are monitored on an oscilloscope with the following characteristics: t;< 15ns, Rip > 10M2&, Ci < 11.5 pF. N-P-N SILICON POWER TRANSISTORS 7-33-(3 PARAMETER MEASUREMENT INFORMATION 5V Voc = 250 GND 2N2904 Vee OFF TEST CIRCUIT The Vgen waveform is supplied by the following characteristics: t;< 15ns,t< 15ns, Zour = 502, tw = 204s, duty cycle << 2%. Resistors must be noninductive types. CURRENT WAVEFORMS n o 2 > @ a > 2 oO x > a > oo x Qa a S Qa a a a FIGURE 1. RESISTIVE-LOAD SWITCHING % TEXAS INSTRUME POST OFFICE BOX 225012 DALLAS, TEXAS 75265 oe NTS" 3-63TEXAS INSTR {OPTOF ba DE fJade1724 OO3bbbO o 7 BUX80, BUX81 7-33-/3 N-P-N SILICON POWER TRANSISTORS - ot 7 em UN | 3961726 TEXAS INSTR COPTO) 620 35660 =D ' TYPICAL CHARACTERISTICS { TURN-OFF TIME TURN-OFF TIME vs vs ! COLLECTOR CURRENT COLLECTOR CURRENT ipa =te/2 p71 = Ic/5 = 25C Time ps mill 1 4 10 4 4 - 40 wo tc Collector Current A Ie Collector Currant A o FIGURE 2 FIGURE 3 ow Oo COLLECTOR CUTOFF CURRENT FORWARD CURRENT TRANSFER RATIO vs VS = CASE TEMPERATURE COLLECTOR CURRENT w 10 <a EYES | 4 7 ! ! wo ; 3 : 0.4 e : E x So 0.1 re = 5 5 oO 8 0.04 BUX80 S Cc 6 Vcr = 800 V o. =< } 0.01 o a o 0.004 s. ; 0.001 a) -80 40 0 40 80 =: 1120 o _ 4 01 O4 1 4 10 40 100 Tc Case Temperature ~ C Ic Collector Current A FIGURE 4 FIGURE 5 i EXAS a 1283 INSTRUMENTS 3-64 POST OFFICE BOX 225012 DALLAS, TEXAS 75265 7 Tbe DE ec172 OO3bbb1 4 7 TEXAS INSTR {0PTO} SS6T726 TEXAS INSTR COPTO) a 62C 36661 p | . BUX80, BUX81 N-P-N SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS _ ~ | T-33-/3 u COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE VS VS t BASE CURRENT BASE CURRENT 1.2 -~Te = 100C Te = 25C \ > 1. Ic=8A 1 ic=6A 1.05 oo Ic=4A IG=2A 0.95 NS 0.9 0.85 ~ VBE(sat) Base-Emitter Saturation Voltage -- V VCE(sat) Collector-Emitter Saturation Voltage Vv 0 0.75 0 O04 O8 12 16 2 24 0 04 08 1.2 16 2 @ lg Base Current A Ig Base Current A 2 FIGURE 6 FIGURE 7 @ a MAXIMUM SAFE OPERATING AREAS 5 : LIMITING CONDITIONS mo FORWARD-BIAS SAFE OPERATING AREA FOR POWER-DOWN TRANSIENT oe 100 131 <3A 5 = 25 Bis Te = 26 C 0.25A <Ipo 1A a Te <100C . 5 < 10 ma - & - rs 5 i 8 z om 1 E 7s = = 8 Ss Go 2 Qa \ 3 ro") 2 01 3 . : 1 a 2 a : BUxe1 0.0% 1 10 100 1k 0 200 400 600 800 1k VcE Collector-Emitter Voitage V VceE Collector-Emitter Voltage V FIGURE 8 FIGURE 9 1283 TEXAS : INSTRUMENTS 3650 | POST OFFICE BOX 228012 DALLAS, TEXAS 75265.TEXAS INSTR {OPTO}T be DE jste1726 o0abbbe2 3 a 8961726 TEXAS INSTR COPTO) 62E 36662 BUX80, BUX81 7-33-/3 N-P-N SILICON POWER TRANSISTORS ao, MAXIMUM SAFE OPERATING AREA Velie INDUCTIVE Locus LOAD SHAPING CIRCUIT BASE DRIVE UNIT Tut . PEAK CONTROLLING VOLTAGE ta CLAMP 'B2 VBE (off) q j PEAK Ic SENSE rh y FIGURE 10. TEST CIRCUIT FOR POWER-DOWN TRANSIENT THERMAL INFORMATION j o 9 aw 2 w THERMAL RESPONSE DISSIPATION DERATING CURVE 0 2 1 300 x 3 . o e 04 ' c zg x 80 5 = - wo FE 1 g g 2 60 a > . . = 0.04 2 : ore. e cS 2 5 40 < 3 0.01 5 E g 5 oa D8 o.004 " = 20 1 Ss. 4 Duty Cycle = t1/42 8 2 See Note 6 a 0.001 0 8 10-5 10-4 10-3 10-2 10-1 0 40 80 120 160 200 v tl Power Pulse Duration ~s Tc ~ Case Temperature C FIGURE 11 FIGURE 12 z NOTE 6: Read time at end of t1, Tyimax) Ty(max) Te = PD ineak) * (Za) * Rayc(max). 3-66 XAS % , 1283 INSTRUMENTS POST OF FICE BOX 225012 DALLAS, TEXAS 75265