FQD1N80 / FQU1N80
©2009 Fairchild Semiconductor Corporation Rev. A3. October 2009
FQD1N80 / FQU1N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
1.0A, 800V, RDS(on) = 20 @VGS = 10 V
Low gate charge ( typical 5.5nC)
Low Crss ( typical 2.7pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQD1N80 / FQU1N80 Units
VDSS Drain-Source Voltage 800 V
IDDrain Current - Continuous (TC = 25°C) 1.0 A
- Continuous (TC = 100°C) 0.63 A
IDM Drain Current - Pulsed (Note 1) 4.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ
IAR Avalanche Current (Note 1) 1.0 A
EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PDPower Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C) 45 W
- Derate above 25°C 0.36 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 2.78 °C/W
RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
!"
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"
"
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!
!
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S
D
G
I-PAK
FQU Series
D-PAK
FQD Series
GS
D
GS
D
January 2009
QFET
®
RoHS Compliant
FQD1N80 / FQU1N80
Rev. A3. January 2009©2009 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 170mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 1.0A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA800 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 1.0 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA
VDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 0.5 A -- 15.5 20
gFS Forward Transconductance VDS = 50 V, ID = 0.5 A -- 0.75 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 150 195 pF
Coss Output Capacitance -- 20 26 pF
Crss Reverse Transfer Capacitance -- 2.7 3.5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400 V, ID = 1.0 A,
RG = 25
-- 10 30 ns
trTurn-On Rise Time -- 25 60 ns
td(off) Turn-Off Delay Time -- 15 40 ns
tfTurn-Off Fall Time -- 25 60 ns
QgTotal Gate Charge VDS = 640 V, ID = 1.0 A,
VGS = 10 V
-- 5.5 7.2 nC
Qgs Gate-Source Charge -- 1.1 -- nC
Qgd Gate-Drain Charge -- 3.3 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 1.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.0 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 1.0 A,
dIF / dt = 100 A/µs
-- 300 -- ns
Qrr Reverse Recovery Charge -- 0.6 -- µC
246810
10-1
100
150oC
25oC
-55oC
! Notes :
1. VDS = 50V
2. 250"s Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
0123456
0
2
4
6
8
10
12
VDS = 400V
VDS = 160V
VDS = 640V
! Note : ID = 1.0 A
VGS , Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101
0
50
100
150
200
250
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
! Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2
10-1
100
150#
! Notes :
1. VGS = 0V
2. 250"s Pulse Test
25#
IDR , Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0.0 0. 2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2. 0
10
20
30
40
50
VGS = 20V
VGS = 10V
! Note : TJ = 25#
RDS(ON) [$],
Drain-Source On-Resistance
ID, Drain Current [A]
10-1 100101
10-2
10-1
100
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
! Notes :
1. 250"s Pulse Test
2. TC = 25#
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
FQD1N80 / FQU1N80
©2009 Fairchild Semiconductor Corporation Rev. A3. January 2009
FQD1N80 / FQU1N80
©2009 Fairchild Semiconductor Corporation Rev. A3. January 2009
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
! Notes :
1. VGS = 0 V
2. ID
= 250 "A
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
! Notes :
1. VGS = 10 V
2. ID = 0.5 A
RDS(ON) , (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100101
10-1
100
! N o tes :
1 . Z%JC(t) = 2.78 #/W M a x.
2 . D u ty F ac to r, D = t1/t2
3 . TJM - TC = PDM * Z%JC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z%JC
(t), Thermal Response
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
TC, Case Temperature [#
]
100101102103
10-2
10-1
100
101
DC
10 ms
1 ms
100"s
Operation in This Area
is Limited by R DS(on)
! Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
FQD1N80 / FQU1N80
©2009 Fairchild Semiconductor Corporation Rev. A3. January 2009
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQD1N80 / FQU1N80
©2009 Fairchild Semiconductor Corporation Rev. A3. January 2009
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQD1N80 / FQU1N80
©2009 Fairchild Semiconductor Corporation Rev. A3. January 2009
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20 9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10 0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91 ±0.10
2.30TYP
[2.30±0.20]
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)TO-252 (DPAK) (FS PKG Code 36)TO-252 (DPAK) (FS PKG Code 36)
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Pa rt Weight per unit (gram): 0.33
FQD1N80 / FQU1N80
©2009 Fairchild Semiconductor Corporation Rev. A3. January 2009
6.60 ±0.20
0.76 ±0.10
MAX0.96
2.30TYP
[2.30±0.20] 2.30TYP
[2.30±0.20]
0.60 ±0.20
0.80 ±0.10
1.80 ±0.20
9.30 ±0.30
16.10 ±0.30
6.10 ±0.20
0.70 ±0.20
5.34 ±0.20
0.50 ±0.10
0.50 ±0.10
2.30 ±0.20
(0.50) (0.50)(4.34)
IPAK
Mechanical Dimensions
Dimensions in Millimeters
I - PAK
Rev. I37
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FQD1N80 / FQU1N80
Rev. A3. January 2009
©2009 Fairchild Semiconductor Corporation