MOTOROLA SC {XSTRS/R FT qb De eae725y ooaaass 3 i 6367254 MOTOROLA SC CXSTRS/R F) S6D 82355 BD : . TH 27-19 MM2005 CASE 22-03, STYLE 1 TO-18 (TO-206AA) MAXIMUM RATINGS 3 Collector Rating Symbol Value Unit Collector-Emitter Voltage VcEO 20 Vde Bese Collector-Base Voltage VcsBo 25 Vde : 345 1 : Emitter-Base Voltage VeBo 4.0 Vde 1 Emitter Collector Current Continuous Ic 600 mAdc Total Device Dissipation @ Ta = 25C Pp 400 mw Derate above 25C 2.28 mwWrc AMPLIFIER TRANSISTOR Total Device Dissipation @ Tc = 25C Pp 1.4 Watts Derate above 25C 8.0 mwrc PNP SILICON Operating and Storage Junction TJ, Tstg | 65 to +200 C Temperature Range Refer to 2N2904 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} | Characteristic | Symbol | Min Typ Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BRICEO 20 _ _- Vde (ic = 10 mAdc, Ig = 0} Collector-Base Breakdown Voltage V(BR}CBO 25 _ _ Vdc (Ic = 100 pAdc, Ie = 0) Emitter-Base Breakdown Voltage V(BR)EBO 40 _ _ Vde i (lg = 100 pAde, Ic = 0) Collector Cutoff Current IcBO _- =~ 0.5 pAdc : (Vcp = 15 Vdc, ig = 0) ON CHARACTERISTICS(1} DC Current Gain hre 100 200 400 - tic = 180 mAde, Vege = 10 Vdc} Collector-Emitter Saturation Voltage VcE(sat} _ 0.3 1.0 Vde (ic = 150 mAde, Ip = 15 mAdc) . Base-Emitter Saturation Voltage _ VBE(sat) - 0.7 2.0 Vde ! (Ig = 150 mAde, Ig = 15 mAdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo _ 6.0 15 pF {Vcp = 10 Vde, Ig = 0, f = 100 kHz) SWITCHING CHARACTERISTICS Turn-On Time ton - 20 45 (Vcc = 30 Vde, ic = 150 mAde, Ip1 = 16 mAdc) Turn-Off Time toff - 85 100 HS (Vcc = 6.0 Vde, Ic = 150 mAde, Igy = Ip2 = 18 mAdc) (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%, MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-265 rr - ~ eee aa <= = = ee He MOTOROLA SC LXSTRS/R FI qb De Bese7esy oo8235b 5 Ez 68387254 MOTOROLA SC CXSTRS/R F) S6D 82356 DB . T- 27-23 MM3001 thru MM3003 CASE 79-02, STYLE 1 TO-39 (TO-205AD) MAXIMUM RATINGS Rating Symbo! | MM30017/MM3002|MM3003| Unit 3 Collector : Collector-Emitter Voltage VcEO 150 200 250 Vde i Emitter-Base Voltage VeBo 5.0 Vde 2 { Collector Current Continuous Ic 200 | 50 | 50 mAdc Base . Total Device Dissipation 3 2% Pp @Ta = 25C 10 Watt 1 Emitter Derate above 25C 5.71 mwrc Total Device Dissipation Pp @ 1c = 25C 5.0 Watts GENERAL PURPOSE TRANSISTOR Derate above 25C 28.6 mWPC Operating and Storage Junction Td, Tstg 65 to +200 a NPN SILICON Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) ' [ Characteristic Symbo! Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1)} ViBR)CEO Vde (ic = 10 mAde, Ip = 0) MM3001 150 _- MM3002 200 _ MM3003 150 _ mitter-Base Breakdown Voltage VIBRIEBO 5.0 _ Vde (IE = 10 pAde, Ic = 0) Collector Cutoff Current icBo #Ads {Vcp = 75 Vde, ig = 0) MM3001 _ 1.0 (Vcp = 100 Vde, IE = 0) MM3002, MM3003 _- 5.0 ON CHARACTERISTICS DC Current Gain hee 20 _ _ i (lc = 10 mAdc, VcE = 10 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 150 _ MHz (lc = 10 mAdc, Vce = 20 Vde, f = 100 MHz} I Output Capacitance Cobo pF - (Vog = 20 Vde, Ig = 0, f = 100 kHz) MM3001 _ 7.0 MM3002, MM3003 _ 16 t (1) Pulse Test: Pulse Width < 300 us, Duty Cycle = 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-266MOTOROLA SC {XSTRS/R FH 4b DE Bese72sy o08e357 6367254 MOTOROLA SC (XSTRS/R F) 96D 82357. D oe TO 297-25 MM3005 MM3006 MM3007 MAXIMUM RATINGS CASE 79-02, STYLE 1 Rating Symbot | Miv13005|MMi3006|MM3007| Unit TO-39 (TO-205AD) Collector-Emitter Voltage VcEO 60 80 100 Vde Collector-Base Voltage VcBo 80 100 120 Vde 3 Collector ' Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous Ic 25 Ade bess Fotal Device Dissipation Pp Watt 4 OTA abave 25C an mWFC en V Emitter Total Device Dissipation Pp @ Tc = 26C 8.0 Watts AUDIO TRANSISTOR Derate above 25C 45.6 mwrc Operating and Storage Junction TJ. Tstg 65 to +200 C NPN SILICON Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BRICEO Vde (Ic = 10 mAds, Ig = 0) MM3005 60 _ . MM3006 80 _ i MM3007 100 _ t Collector-Base Breakdown Voltage V(BR)ICBO Vde : (I = 100 pAde, Ie = 0) MM3005 80 _ ' MM3006 100 - MM3007 120 _ Emitter-Base Breakdown Voltage V(BRIEBO 5.0 _ Vde (lg = 100 wAde, Ic = 0) i Collector Cutoff Current Icgo nAdec (Vcp = 60 Vde, Ie = 0) MM3005 _ 100 (Vcp = 80 Vdc, Ie = 0) MM3006 - 100 (Vcg = 100 Vde, Ie = 0) MM3007 - 100 Emitter Cutoff Current leBo _ 100 nAdc ' (VBE = 4.0 Vdc, Ic = 0) ON CHARACTERISTICS DC Current Gain hrE _ (Ip = 1.0 mAde, VcE = 1.0 Vde} All Types 40 _ (Ic = 150 mAde, VcE = 1.0 Vdc) MM3005 50 250 {Il = 200 mAdec, VcE = 1.0 Vdc} MM3006 50 250 (I = 250 mAdc, Voce = 1.0 Vdc) MM3007 50 250 Collector-Emitter Saturation Voltage VCE(sat) - 0.35 Vde (ic = 150 mAdg, Ip = 15 mAdc} Base-Emitter On Voltage VBE(on) 0.60 0.75 Vde (ic = 150 mAdc, VcE = 1,0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(1} fr 50 - MHz (Ile = 50 mAdc, Vcg = 10 Vde, f = 20 MHz) Output Capacitance Cobo _ 15 pF (Vcp = 10 Vde, Ie = 0, f = 100 kHz) (1) Pulse Test: Pulse Width < 300 us, Duty Cycle = 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-267MOTOROLA SC {XSTRS/R Ft qb DE @b367254 onsean7 o i 6367254 MOTOROLA SC CXSTRS/R F) ee 96D 82367. OD T~ 3 7- (Ss MM4257 MM4258 CASE 22-03, STYLE 1 TO-18 (TO-206AA) MAXIMUM RATINGS 3 Collector Rating Symbol |MM4257|MM4258 Unit Collector-Emitter Voltage VCEO 6.0 12 Vdc 2 Collector-Base Voltage VcBo 6.0 12 Vde Base nee Emitter-Base Voltage VEBO 45 Vde + Emitter Collector Current Continuous Ic 200 mAdc Total Device Dissipation @ Ta = 25C Pp 360 mw Derate above 25C 2.06 mwrc SWITCHING TRANSISTOR Total Device Dissipation @ Tc = 26C Pp 1.2 Watts Derate above 25C 6.86 mWPC PNP SILICON Operating and Storage Junction Ty Tstg ~65 to +200 *c Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | symbot | Min Typ Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BR)CES Vde {Ic = 100 wAdc, VBE = 0) MM4257 6.0 _ _ MM4258 12 _ - Collector-Emitter Sustaining Voltage(1) VCEO(sus) Vde (lc = 2.0 mAdc, tg = 0) MM4257 6.0 _ MM4258 12 _ - Collector-Base Breakdown Voltage V(BR)CBO Vde (Ic = 100 pAdc, Iz = 0} MM4257 6.0 - _ MM4258 12 _- _ Emitter-Base Breakdown Voltage V(BR)EBO 45 - ~_ Vde {lg = 100 zAdc, I = 0) Collector Cutoff Current IcES pAdc (Vcg = 6.0 Vdc, Vge = 0) _ _ 0.01 (Vce = 3.0 Vde, Vee = 0, Ta = +65C} _ _ 5.0 i ON CHARACTERISTICS(1) DC Current Gain hee (Ic = 1.0 mAde, Voge = 0.5 Vde)} 15 - - (ic = 10 mAdc, VcE = 0.3 Vdc} 30 _ 120 (ic = 50 mAde, Vce = 1.0 Vde) 30 _- - Collector-Emitter Saturation Voltage VcE(sat} Vdc {i = 10 mAde, Ip = 1.0 mAdc) _ _ 0.15 {Ic = 50 mAdg, ig = 5.0 mAdc) _ _ 0.5 Base-Emitter Saturation Voltage VBE(sat) Vde (lc = 10 mAde, Ip = 1.0 mAdc) 0.75 _- 0.95 (Ig = 50 mAde, Ig = 5.0 mAdc) _ - 1.6 SMALL SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(2) ff MHz {Ic = 10 mAde, VcE = 5.0 Vde, f = 100 MHz) MM4257 500 _ _ (Ic = 10 mAdc, Voce = 10 Vde, f = 100 MHz) MM4258 700 - - Input Capacitance Cibo _ _- 3.5 pF (Vag = 0.5 Vde, Ic = 0, f = 100 kHz) Collector-Base Capacitance Ceb - _ 3.0 pF Vep = 5.0 Vdc, Ip = 0, f = 100 kHz) MOTOROLA SMALL-SIGNAL SEMIGONDUCTORS 4-277 rl bea neMOTOROLA SC {XSTRS/R Ft 6387254 MOTOROLA SC (XSTRS/R F) MIM4257, MM4258 4h ELECTRICAL CHARACTERISTICS {continued) (Ta = 26C unless otherwise noted.) DE Peae7es4 ooseana 1 9 96D 82368 TT- 37-15 DB Characteristic | Symbol | Min | Typ | Max | Unit | SWITCHING CHARACTERISTICS Turn-Qn Time 4 ton = 10 16 ns " Wec = 1.5 Vde, Vee = 0, Delay Time ig = 10 mAdg, gy = 1.0 mAde) td = 5.0 10 ns Rise Time t; - 5.0 15 ns : Turn-Off Time MM4257 toff _ 12 15 ns { Vee = 1.5 Vde, MM4258 _- 16 20 : Storage Time Ic = 10 mAdc, MM4257 ts - 6.0 15 ns Iai = !p2 = 1.0 mAdc) MiM4258 8.0 20 : Fall Time MM4257 t _ 6.0 10 ns , MM4258 8.0 10 \ Storage Time ts ns (Ic = 10 mAde, Ip1 ~ 10 mAdc, Ip2 ~ 10 mAdc) MM4257 - _ 15 MM4258 _ _ 20 (1) Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%. (2) f7 is defined as the frequency at which |hfel extrapofates to unity. TYPICAL TRANSIENT CHARACTERISTICS FIGURE 1 CURRENT-GAIN BANDWIDTH PRODUCT 1000 700 500 300 ft, CURRENT-GAIN BANDWIDTH PRODUCT (MHz! Voce = 5.0 V MM4257 Vce = 10 V MM4258 Ty = 25C C, CAPACITANCE (pF) 70 10 ic, COLLECTOR CURRENT (mA) FIGURE 3 TURN-ON TIME 100 iy S t, TIME (ns) ~ 1.0 2.0 wat 3.0 t, TIME (ns} ta @ VBE(off) = 0 5.0 7.6 100 {c, COLLECTOR CURRENT (mA) 70 5.0 3.0 2.0 07 0.2 0.3 FIGURE 2 CAPACITANCE 05 07 10 2.0 3.0 Ty= 26C MM4258 5.0 7.0 Va, REVERSE VOLTAGE (VOLTS) FIGURE 4 TURN-OFF TIME ig, COLLECTOR CURRENT (mA) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-278 20 at weenie! arnbnn poeMOTOROLA SC IXSTRS/R FY hee, DC CURRENT GAIN 6367254 MOTOROLA SC C(XSTRS/R F) M4257, MM4258 fb DEP esb7254 ooseans 3 86D 82369 D THBI-S FIGURE 5 SWITCHING TIME TEST CIRCUIT Vin | Vep | Veco } 81 R2 R3 ic tet Ip2 Volts | Volts | Volts | Ohms | Chms | Ohms | mA mA mA ton | -5.8 | GND | -1.5 | 130 | 22k | Sk 10 1.0 = toff | +9.8 | -8.0 | -15 | 130 | 22k | Sk 10 1,0 1.0 Vout ts | 49.0 | -10 | -30 | 270 [ 510 | 390 | 10 10 10 0.1 uF Zina kr Vin tp<1.0ns Zin = 50 22 ip<i.ns 502 ty = 240 ns DC. CURRENT GAIN FIGURE 6 MM4257 hee, OC CURRENT GAIN 2.0 20 tp, COLLECTOR CURRENT (mA) iy a FIGURE 7 MM4258 7 1 (c, COLLECTOR CURRENT (mA) FIGURE 8 ON VOLTAGES VBE(sat} @ Ic/lp = 1 Vege @ VcE= 10V VOLTAGE (VOLTS} Ig/lg = 10 VCE(sat) 20 7 10 ic, COLLECTOR CURRENT (mA) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-279