LESHAN RADIO COMPANY, LTD.
M29–1/2
1
3
2
MMBTA55LT1
MMBTA56LT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Driver Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol
MMBTA55 MMBTA56
Unit
Collector–Emitter V oltage V CEO –60 –80 Vdc
Collector–Base V oltage V CBO –60 –80 Vdc
Emitter–Base V oltage V EBO –4.0 Vdc
Collector Current — Continuous I C–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 55 6 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) V (BR)CEO Vdc
(I C = –1.0 mAdc, I B= 0 ) MMBTA55 –60 —
MMBTA56 –80 —
Emitter–Base Breakdown V oltage V (BR)EBO –4.0 — Vdc
(I E = –100 µAdc, I C = 0 )
Collector Cutoff Current I CEO — –0.1 µAdc
( V CE = –60Vdc, I B = 0)
Collector Cutoff Current I CBO µAdc
( V CB = –60Vdc, I E= 0) MMBTA55 — –0.1
( V CB = –80Vdc, I E= 0) MMBTA56 — –0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
2
EMITTER
3
COLLECTOR
1
BASE
Value
LESHAN RADIO COMPANY, LTD.
M29–2/2
MMBTA55LT1 MMBTA56LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
(I C = –10 mAdc, V CE = –1.0 Vdc) 100 —
(I C = –100mAdc, V CE = –1.0 Vdc) 100 —
Collector–Emitter Saturation V oltage VCE(sat) — –0.25 Vdc
(I C = –100mAdc, I B = –10mAdc)
Base–Emitter On Voltage V BE(on) — –1.2 Vdc
(I C = –100mAdc, V CE = –1.0Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product(4) f T50 — MHz
(V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz)
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
