7-165
VN0545
VN0550
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-39 TO-92 Die†
450V 60Ω150mA — VN0545N3 VN0545ND
500V 60Ω150mA VN0550N2 VN0550N3 VN0550ND
† MIL visual screening available
Order Number / Package
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
■■Free from secondary breakdown
■■Low power drive requirement
■■Ease of paralleling
■■Low CISS and fast switching speeds
■■Excellent thermal stability
■■Integral Source-Drain diode
■■High input impedance and high gain
■■Complementary N- and P-channel devices
Applications
■■Motor controls
■■Converters
■■Amplifiers
■■Switches
■■Power supply circuits
■■Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
TO-39
TO-92
Ordering Information
S G D
D G S
Case: DRAIN
7-166
VN0545/VN0550
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-39 100mA 300mA 6.0W 20.8 125 100mA 300mA
TO-92 50mA 250mA 1.0W 125 170 50mA 250mA
* ID (continuous) is limited by max rated Tj.
Thermal Characteristics
Symbol Parameter Min Typ Max Unit Conditions
BVDSS VN0550 500
VN0545 450
VGS(th) Gate Threshold Voltage 2 4 V VGS = VDS , ID = 1mA
∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.0 mV/°CV
GS = VDS , ID = 1mA
IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 10 µAV
GS = 0V, VDS = Max Rating
1mAV
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 100 VGS = 5V, VDS = 25V
150 350 VGS = 10V, VDS = 25V
RDS(ON) 45 VGS = 5V, ID = 50mA
40 60 VGS = 10V, ID = 50mA
∆RDS(ON) Change in RDS(ON) with Temperature 1 1.7 %/°CV
GS = 10V, ID = 50mA
GFS Forward Transconductance 50 100 m VDS = 25V, ID = 50mA
CISS Input Capacitance 45 55
COSS Common Source Output Capacitance 8 10 pF
CRSS Reverse Transfer Capacitance 2 5
td(ON) Turn-ON Delay Time 10
trRise Time 15
td(OFF) Turn-OFF Delay Time 10
tfFall Time 10
VSD Diode Forward Voltage Drop 0.8 V VGS = 0V, ISD = 0.5A
trr Reverse Recovery Time 300 ns VGS = 0V, ISD = 0.5A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
mA
VV
GS = 0V, ID = 1mA
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V,
ID = 150mA,
RGEN = 25Ω
ns
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Ω
Ω
7-167
VN0545/VN0550
Typical Performance Curves
Output Characteristics
0.5
0.4
0.3
0.2
0.1
0
V
DS
(volts)
I
D
(amperes)
Saturation Characteristics
0.25
0.20
0.15
0.10
0.05
0
V
DS
(volts)
I
D
(amperes)
Maximum Rated Safe Operating Area
1 100010010
0.01
0.1
1.0
0.001
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
t
p
(seconds)
Transconductance vs. Drain Current
0.40
0.32
0.24
0.16
0.08
00 0.50.1 0.2 0.3 0.4
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0 15010050
10
8
6
4
2
01257525
T
C
(°C)
P
D
(watts)
TO-92
P
D
= 1W
T
C
= 25°C
TO-92
T
A
= -55°C
T
A
= 25°C
T
A
= 125°C
V
DS
= 25V
TO-39 (DC)
TO-39 (pulsed)
0102030 5040
VGS = 10V
8V
6V
4V
0246 108
V
GS
= 10V 6V
8V
4V
TO-39
P
D
= 6W
T
C
= 25°C
TO-39
0
TO-92 (DC)
TC = 25°C
7-168
VN0545/VN0550
Typical Performance Curves
C
OSS
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(°C)
V
GS(th)
(normalized)
V
DS(th)
and R Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(°C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
100
75
50
25
0
C (picofarads)
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
0 10203040
0246810
0.5
0.4
0.3
0.2
0.1
0
-50 0 50 100 150
1.1
1.0
0.9
100
80
60
40
20
0
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0 0.2 0.4 0.6 0.8 1.0
-50 0 50 100 150
50 pF
V
DS
= 40V
V
DS
= 10V
105 pF
V
(th)
@ 1mA
V
GS
= 5V
V
GS
= 10V
T= -55
A
C°
V
DS
= 25V
C
ISS
C
RSS
25°C
150°C
0 0.1 0.2 0.3 0.50.4
R
DS(ON)
@ 10V, 50mA
f = 1MHz
112 pF
1.8
1.4
1.0
0.6
0.2
0
R
DS(ON)
(normalized)
