DG201BMIL, DG202BMIL
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S12-0631-Rev. A, 19-Mar-12 1Document Number: 63374
For technical questions, contact: AnalogSwitchtechsupport@vishay.com
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Improved Quad CMOS Analog Switches
DESCRIPTION
The DG201B, DG202B analog switches are highly improved
versions of the industry-standard DG201A, DG202. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG201B and DG202B
can handle up to ± 22 V input signals, and have an improved
continuous current rating of 30 mA. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply voltages in the
off condition.
The DG201B is a normally closed switch and the DG202B is
a normally open switch. (see Truth Table.)
FEATURES
• ± 22 V supply voltage rating
• TTL and CMOS compatible logic
• Low on-resistance - RDS(on): 45
• Low leakage - ID(on): 20 pA
• Single supply operation possible
• Extended temperature range
• Fast switching - tON: 120 ns
• Low glitching - Q: 1 pC
BENEFITS
• Wide analog signal range
• Simple logic interface
• Higher accuracy
• Minimum transients
• Reduced power consumption
• Superior to DG201A, DG202
APPLICATIONS
• Industrial instrumentation
• Test equipment
• Communications systems
• Disk drives
• Computer peripherals
• Portable instruments
• Sample-and-hold circuits
• Hi-Rel systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Notes
• Logic “0” 0.8 V
• Logic “1” 2.4 V
DG201B/DG202B
LCC
IN1IN2
D1D2
S1S2
V- V+
CNDNG
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG201B/DG202B
Dual-In-Line, CerDIP
TRUTH TABLE
Logic DG201B DG202B
0OnOff
1OffOn
DG201BMIL, DG202BMIL
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S12-0631-Rev. A, 19-Mar-12 2Document Number: 63374
For technical questions, contact: AnalogSwitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 12 mW/°C above 75 °C.
d. Derate 10 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (typical channel)
Fig. 1
ORDERING INFORMATION (Hi-Rel)
PART CONFIGURATION TEMP. RANGE PACKAGE ORDERING PART GENERIC DSCC NUMBER
DG201B SPST x 4, NC - 55 °C to 125 °C
16-pin CerDIP
DG201BAK DG201BAK -
DG201BAK-E3 DG201BAK-E3 -
DG201BAK/883 DG201BAK/883
5962-8671604MEA
(Vishay qualified, DSCC
approval in progress)
LCC-20 DG201BAZ/883 DG201BAZ/883
5962-8671604M2A
(Vishay qualified, DSCC
approval in progress)
DG202B SPST x 4, NO - 55 °C to 125 °C
16-pin CerDIP
DG202BAK DG202BAK -
DG202BAK-E3 DG202BAK-E3 -
DG202BAK/883 DG202BAK/883
5962-8671605MEA
(Vishay qualified, DSCC
approval in progress)
LCC-20 DG202BAZ/883 DG202BAZ/883
5962-8671605M2A
(Vishay qualified, DSCC
approval in progress)
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Voltages Referenced to V- 44
V
GND 25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current (any terminal) 30 mA
Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature (A suffix) - 65 to 150 °C
Power Dissipation (Package)b16-pin CerDIPc900 mW
LCC-20d750
D
X
S
X
V+
IN
X
V-
Level
Shift/
GND
V+
V-
5 V
Reg
Drive
DG201BMIL, DG202BMIL
www.vishay.com Vishay Siliconix
S12-0631-Rev. A, 19-Mar-12 3Document Number: 63374
For technical questions, contact: AnalogSwitchtechsupport@vishay.com
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SPECIFICATIONSa
PARAMETER SYMBOL
TEST CONDITIONS UNLESS
OTHERWISE SPECIFIED
TEMP.bTYP.c
A SUFFIX
- 55 °C to 125 °C UNIT
V+ = 15 V, V- = - 15 V MIN.dMAX.d
VIN = 2.4 V, 0.8 Vf
Analog Switch
Analog Signal RangeeVANALOG Full - - 15 15 V
Drain-Source
On-Resistance RDS(on) VD = ± 10 V, IS = 1 mA
Room 45 - 85
Full - - 100
RDS(on) Match RDS(on) Room 2 - -
Source Off Leakage Current IS(off) V
S = ± 14 V, VD = ± 14 V Room ± 0.01 - 0.5 0.5
nA
Full - - 20 20
Drain Off Leakage Current ID(off) V
S = ± 14 V, VD = ± 14 V Room ± 0.01 - 0.5 0.5
Full - - 20 20
Drain On Leakage Current ID(on) V
S = ± 14 V, VD = ± 14 V Room ± 0.02 - 0.5 0.5
Full - - 40 40
Digital Control
High Input Voltage VINH Full - 2.4 - V
Low Input Voltage VINL Full - - 0.8
Input Current IINH or IINL VINH or VINL Full - - 1 1 μA
Input Capacitance Cin Room 5 - - pF
Dynamic Characteristics
Turn-On T ime tON VS = 2 V
see switching time test circuit
Room 120 - 300
ns
Full - - -
Turn-Off Time tOff
Room 65 - 200
Full - - -
Charge Injection Q CL = 1000 pF, Vg = 0 V, Rg = 0 Room 1 - - pC
Source Off Capacitance CS(off) VS = 0 V, f = 1 MHz Room 5 - -
pFDrain Off Capacitance CD(off) Room 5 - -
Channel On Capacitance CD(on) V
D = VS = 0 V, f = 1 MHz Room 16 - -
Off Isolation OIRR CL = 15 pF, RL = 50 ,
VS = 1 VRMS, f = 100 kHz
Room 90 - - dB
Channel-to-Channel Crosstalk XTALK Room 95 - -
Power Supply
Positive Supply Current I+
VIN = 0 V or 5 V
Room - - 50
μA
Full - - 100
Negative Supply Current I- Room - - 1 -
Full - - 5 -
Power Supply Range for
Continuous Operation VOP Full - ± 4.5 ± 22 V
DG201BMIL, DG202BMIL
www.vishay.com Vishay Siliconix
S12-0631-Rev. A, 19-Mar-12 4Document Number: 63374
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Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa (Single Supply)
PARAMETER SYMBOL
TEST CONDITIONS UNLESS
OTHERWISE SPECIFIED
TEMP.bTYP.c
A SUFFIX
- 55 °C to 125 °C
UNIT
V+ = 12 V, V- = 0 V MIN.dMAX.d
VIN = 2.4 V, 0.8 Vf
Analog Switch
Analog Signal RangeeVANALOG Full - 0 12 V
Drain-Source
On-Resistance RDS(on) VD = 3 V, 8 V, IS = 1 mA Room 90 - 160
Full - - 200
Dynamic Characteristics
Turn-On T ime tON VS = 8 V
see switching time test circuit
Room 120 - 300 ns
Turn-Off Time tOFF Room 60 - 200
Charge Injection Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Room 4 - - pC
Power Supply
Positive Supply Current I+
VIN = 0 V or 5 V
Room - - 50
μA
Full - - 100
Negative Supply Current I- Room - - 1 -
Full - - 5 -
Power Supply Range for
Continuous Operation VOP Full - 4.5 25 V
DG201BMIL, DG202BMIL
www.vishay.com Vishay Siliconix
S12-0631-Rev. A, 19-Mar-12 5Document Number: 63374
For technical questions, contact: AnalogSwitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
RDS(on) vs. VD and Power Supply Voltages
RDS(on) vs. VD and Single Power Supply Voltages
Leakage Currents vs. Analog Voltage
RDS(on) vs. VD and Temperature
Input Switching Threshold vs. Supply Voltage
Leakage Currents vs. Temperature
- 20 - 16 - 12 - 8- 4 0 4 812 16 20
40
50
60
70
80
90
100
110
R
DS(on)
()
± 5 V
V
D
- Drain Voltage (V)
± 10 V
± 15 V
± 20 V
30
20
10
0246810 12 14 16
0
25
50
75
100
125
150
175
200
225
RDS(on) ()
VD - Drain Voltage (V)
V+ = 5 V
7 V
10 V
12 V
15 V
250
I
S( of f)
, I
D(of f)
I
D(on)
- 20 - 15 - 10 - 5 0 5 10 15 20
80
60
40
20
0
- 20
- 40
- 60
- 80
Temperature (°C)
IS, ID- Current (pA)
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
0
10
20
30
40
50
- 15 - 10 - 5 0 5 10 15
RDS(on) ()
VD - Drain Voltage (V)
125 °C
85 °C
25 °C
- 55 °C
V+ = 15 V
V- = - 15 V
60
70
80
90
100
0
0.5
1
1.5
2
2.5
VTH (V)
4 6 8 1 0 1 21 4 1 61 8 2 0
V+ Positive Supply (V)
- 55 25 45 5- 15 65
1 nA
100 pA
10 pA
- 35
1 pA
85 105 125
V+ = 15 V
V- = - 15 V
V
S,
V
D
= ± 14 V
I
S( of f)
, I
D(of f)
Temperature (°C)
- CurrentI, I
SD
DG201BMIL, DG202BMIL
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S12-0631-Rev. A, 19-Mar-12 6Document Number: 63374
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Switching Time vs. Single Supply Voltage
QS, QD - Charge Injection vs. Analog Voltage
Switching Time vs. Power Supply Voltage
Off Isolation vs. Frequency
Supply Current vs. Switching Frequency
0
246810 12 14 16 1820
100
200
300
400
500
V- = 0 V
t
on
t
of f
Switching Time (ns)
V+ - Positive Supply (V)
- 15 - 10 - 5 0 5 10 15
30
20
10
0
- 10
- 20
- 30
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
Q - Charge (pC)
V
ANALOG
- Analog Voltage (V)
0
100
200
300
400
t
on
t
of f
Switching Time (ns)
0± 4± 8± 12 ± 16 ± 20
V+, V- Positive and Negative Supplies (V)
10K 100K 1M 10M
40
50
60
70
80
90
100
110
120
OIRR (dB)
V+ = 15 V
V- = - 15 V
R
L
= 50
f - Frequency (Hz)
1K 10K 100K 1M
4
3
2
1
0
I+ - Supply Current (mA)
f - Frequency (Hz)
DG201BMIL, DG202BMIL
www.vishay.com Vishay Siliconix
S12-0631-Rev. A, 19-Mar-12 7Document Number: 63374
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TEST CIRCUITS
Fig. 2 - Switching Time
Fig. 3 - Off Isolation Fig. 4 - Channel-to-Channel Crosstalk
Fig. 5 - Charge Injection
S
IN R
L
D
R
g
= 50
V
S
V
O
0 V, 2.4 V
Of f Isolation = 20 log
V
S
V
O
V+
- 15 V
GND V- C
C
+ 15 V
IN
1
V
O
+ 15 V
- 15 V
GND
R
L
V+
V-
NC
X
TALK Isolation = 20 log
C
V
S
C
V
O
0 V, 2.4 V
50
V
S S
1
IN
2
S
2
R
g
= 50
D
1
D
2
C = RF bypass
0 V, 2.4 V
C
L
1000 pF
V
g
3 V
D
V+
V-
R
g
- 15 V
GND
IN
S V
O
+ 15 V
V
O
V
O
IN
X ON ON OFF
VO
= measured voltage error due to charge injection
The charge injection in coulombs is Q = C
L
x V
O
DG201BMIL, DG202BMIL
www.vishay.com Vishay Siliconix
S12-0631-Rev. A, 19-Mar-12 8Document Number: 63374
For technical questions, contact: AnalogSwitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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APPLICATIONS
Fig. 6 - Sample-and-Hold
Fig. 7 - Active Low Pass Filter with Digitally Selected Break Frequency
LM101A
+ 15 V
- 15 V
30 pF
+ 15 V
- 15 V
V+
V-
DG201B
50 pF
1000 pF
J202
J500
J507
+ 15 V
2N4400
- 15 V
V
IN
V
OUT
1 k
200
5 M
5.1 M
Aquisition T ime = 25 µs
Aperature T ime = 1 µs
Sample to Hold Of fset = 5 mV
Droop Rate = 5 mV/s
Logic Input
Low = Sample
High = Hold
-
+
TTL
Control
150 pF
1500 pF
+ 15 V
DG201B
GND
30 pF
LM101A
+ 15 V
- 15 V
1 10 100 1K 10K 100K 1M
- 40
0
160
120
80
V oltage Gain - dB
f
C4
Select
f
C3
Select
f
C2
Select
f
C1
Select
R
1
= 10 k
R
2
= 10 k
R
3
= 1 M
V
OUT
V
1
V-
C
4
C
3
C
2
C
1
A
L
(V oltage Gain Below Break Frequency) = = 100 (40 dB)
R
3
R
1
f
C
(Break Frequency) =
1
2R
3
C
X
1
2R
1
C
X
f
L
(Unity Gain Frequency) =
Max. Attenuation =
R
DS(on)
10 k
≈
- 47 dB
0.015 µF
0.15 µF
- 15 V
-
+
40
f - Frequency (Hz)
f
L1
f
L2
f
L3
f
L4
f
C1
f
C2
f
C3
f
C4
DG201BMIL, DG202BMIL
www.vishay.com Vishay Siliconix
S12-0631-Rev. A, 19-Mar-12 9Document Number: 63374
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Fig. 8 -A Precision Amplifier with Digitally Programable Input and Gains
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63374.
Gain =
Gain 1 (x1)
Gain 2 (x10)
Gain 3 (x100)
Gain 4 (x1000)
+ 15
V
- 15 V
GND
DG419
30 pF
+ 15 V
+ 15 V
- 15 V DG202B
Logic High = Switch On
+
-
LM101A
R
F
+ R
G
R
G
V
IN1
V
IN2
CH
R
F1
18 k W
R
F1
9.9 k W
R
F1
100 k W
R
G3
100 W
R
G2
100 W
R
G1
2 k W
V +
V-
GND V-
+ 5 V
V
L
E1E
Q1
A
L
A1
e1B
B1
L1
S
C
eA∝
D
12 3 4 5 6 78
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71282
03-Jul-01 www.vishay.com
1
CERDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A4.06 5.08 0.160 0.200
A10.51 1.14 0.020 0.045
B0.38 0.51 0.015 0.020
B11.14 1.65 0.045 0.065
C0.20 0.30 0.008 0.012
D19.05 19.56 0.750 0.770
E7.62 8.26 0.300 0.325
E16.60 7.62 0.260 0.300
e12.54 BS C 0.100 BSC
eA7.62 BSC 0.300 BSC
L3.18 3.81 0.125 0.150
L13.81 5.08 0.150 0.200
Q11.27 2.16 0.050 0.085
S0.38 1.14 0.015 0.045
∝0°15°0°15°
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5403
D
L1
E
BL
e
A1
A
28
1
2
Packaging Information
Vishay Siliconix
Document Number: 71290
02-Jul-01 www.vishay.com
1
20ĆLEAD LCC
MILLIMETERS INCHES
Dim Min Max Min Max
A1.37 2.24 0.054 0.088
A11.63 2.54 0.064 0.100
B0.56 0.71 0.022 0.028
D8.69 9.09 0.342 0.358
E8.69 9.09 0.442 0.358
e1.27 BS C 0.050 BSC
L1.14 1.40 0.045 0.055
L11.96 2.36 0.077 0.093
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5321
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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