A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINI MUM TYPICAL MAXIMUM UNITS
BVCES IC = 20 mA 60 V
BVCEO IC = 50 mA 32 V
BVEBO IE = 5.0 mA 4.0 V
hFE VCE = 25 V IC = 3.5 A 15 100 ---
COB VCE = 27 V f = 1.0 MHz 240 pF
PG
η
ηη
ηCVCC = 27 V POUT = 120 W f = 150 MHz 9.0
65 dB
%
NPN SILICON RF POWER TRANSISTOR
BAM120
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10430
DESCRIPTION:
The ASI BAM120 is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 150
MHz.
FEATURES:
• ηC = 65 % typ. @ 120 W/150 MHz
• PG = 9.0 dB typ. @ 120 W/150 MHz
• Omnigold™ Metalization System
MAX IMUM RATINGS
IC12 A
VCES 60 V
VEBO 4.0 V
PDISS 140 W @ TC = 25 °C
TJ-65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 1.2 °C/W
