AO3460
60V N-Channel MOSFET
Product Summary
VDS (V) = 60V
ID= 0.65A (VGS = 10V)
RDS(ON) < 1.7Ω(VGS = 10V)
RDS(ON) < 2Ω(VGS = 4.5V)
ESD protected
General Description
The AO3460 uses advanced trench technology to
provide excellent RDS(ON), low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected.
G
D
S
SOT23
Top View Bottom View
D
G
S
D
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
70 90
100 125
R
θJL
63 80
0.9
-55 to 150
W
T
A
=70°C
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
°C/W
Maximum Junction-to-Ambient
A
Steady-State °C/W
±20Gate-Source Voltage
Junction and Storage Temperature Range °C
P
D
1.4
Drain-Source Voltage 60
Continuous Drain
Current
A, F
Maximum UnitsParameter
T
A
=25°C
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
I
D
0.65
V
V
0.5
1.6 A
S
S
G
Rev.3.0: July 2013 www.aosmd.com Page 1 of 4
AO3460
Symbol Min Typ Max Units
BV
DSS
60 V
1
T
J
=55°C 5
I
GSS
Gate-Body leakage current ±10 µA
V
GS(th)
1 2.2 2.5 V
I
D(ON)
1.6 A
1.4 1.7
T
J
=125°C 2.5 3
1.6 2 Ω
g
FS
0.8 S
V
SD
0.8 1 V
I
S
1.2 A
C
iss
22 27 pF
C
oss
6 10 pF
C
rss
2 6 pF
R
g
250 400 Ω
Q
g
(10V) 0.8 2 nC
Q
g
(4.5V) 0.4 1.5 nC
Q
gs
0.17 1 nC
Q
gd
0.2 1 nC
t
D(on)
5.3 12 ns
t
2.8
6
ns
On state drain current V
GS
=10V, V
DS
=5V
Maximum Body-Diode Continuous Current
SWITCHING PARAMETERS
Input Capacitance
DYNAMIC PARAMETERS
Ω
V
GS
=4.5V, I
D
=0.5A
V
DS
=5V, I
D
=0.65A
I
S
=0.1A,V
GS
=0V
V
GS
=10V, V
DS
=30V, R
L
=75
Ω
,
Output Capacitance
Turn-On DelayTime
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=250uA
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
V
GS
=10V, I
D
=0.65A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=30V, f=1MHz
Turn-On Rise Time
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=0.65A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Rev.3.0: July 2013 www.aosmd.com Page 2 of 4
t
r
2.8
6
ns
t
D(off)
19.7 30 ns
t
f
5.5 11 ns
t
rr
11.3 14 ns
Q
rr
7.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off DelayTime
V
GS
=10V, V
DS
=30V, R
L
=75
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=0.65A, dI/dt=100A/µs, V
GS
=-9V
I
F
=0.65A, dI/dt=100A/µs, V
GS
=-9V
Turn-On Rise Time
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤10s thermal resistance rating.
Rev.3.0: July 2013 www.aosmd.com Page 2 of 4
AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
I
D
=250µA
0
0.5
1
1.5
2
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics
VGS=3.0V
4V
6V 10V
4.5V
0
0.2
0.4
0.6
0.8
1
0 1 2 3 4 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-40°C
1
1.5
2
2.5
3
0 0.5 1 1.5
RDS(ON) (Ω
Ω
Ω
Ω)
0.6
1.0
1.4
1.8
2.2
-50 0 50 100 150 200
Normalized On-Resistance
VGS=10V
ID=0.65A
VGS=4.5V
ID=0.5A
25°C
125°C
V
DS
=5V
V
GS
=10V
VGS=4.5V
3.5V
Rev.3.0: July 2013 www.aosmd.com Page 3 of 4
10 0.5 1 1.5
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0.0 0.4 0.8 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
-40°C
0.6-50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1
1.5
2
2.5
3
3.5
4
2 4 6 8 10
RDS(ON) (Ω
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
I
D
=0.65A
25°C
125°C
Rev.3.0: July 2013 www.aosmd.com Page 3 of 4
AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
I
D
=250µA
0
2
4
6
8
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
30
0 10 20 30 40 50 60
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
4
8
12
16
20
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Coss
C
rss
VDS=30V
ID=0.65A
TJ(Max)=150°C
TA=25°C
0.001
0.010
0.100
1.000
10.000
0.01 0.1 1 10 100
ID(Amps)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
10s
1s
Rev.3.0: July 2013 www.aosmd.com Page 4 of 4
0
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
on
T
P
D
T
on
PD
0.001 0.01 0.1 1 10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
T
C
=25
°
C
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