053-7078 Rev - 10-2002
MS1455
DESCRIPTION:
DESCRIPTION: DESCRIPTION:
DESCRIPTION:
The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed for amplifier applications in the
806-866 MHz frequency range. Internal impedance matching
assures optimum gain and efficiency across the entire
frequency band. Gold metalization and emitter ballast resistors
assures infinite VSWR capability and long term reliability.
ABSOLUTE MAXIMU
ABSOLUTE MAXIMUABSOLUTE MAXIMU
ABSOLUTE MAXIMUM RATINGS
M RATINGS M RATINGS
M RATINGS (Tcase = 25°
°°
°C)
S
mbol Paramete
alue Unit
VCBO Collector-Base Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
VCEO Collector-Emitter Voltage 18 V
VCES Collector-Emitter Voltage 36 V
PDISS Power Dissi
ation 150 W
IC Device Current 9.0 A
TJ Junction Temperature 200 °
°°
°C
TSTG Storage Temperature -65 to +150 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 1.2 °
°°
°C/W
Features
FeaturesFeatures
Features
• 836 MHz
• 12.5 VOLTS
• POUT = 45 WATTS
• GP = 4.7 dB MINIMUM
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
800 - 900 MHz APPLICATIONS