2N6520RLRA - ON Semiconductor

 Semiconductor Components Industries, LLC, 2004

May, 2004 − Rev. 4 1Publication Order Number:

2N6515/D

2N6515, 2N6517, 2N6520

High Voltage Transistors

NPN and PNP

Features

•Voltage and Current are Negative for PNP Transistors

•Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol 2N6515 2N6517

2N6520 Unit

Collector − Emitter Voltage VCEO 250 350 Vdc

Collector − Base Voltage VCBO 250 350 Vdc

Emitter − Base Voltage

2N6515, 2N6516, 2N6517

2N6519, 2N6520

VEBO 6.0

5.0

Vdc

Base Current IB250 mAdc

Collector Current − Continuous IC500 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

12 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not nor-

mal operating conditions) and are not valid simultaneously. If these limits are ex-

ceeded, device functional operation is not implied, damage may occur and reli-

ability may be af fected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient RJA 200 °C/W

Thermal Resistance,

Junction−to−Case RJC 83.3 °C/W

2N65xx

Y = Year

WW = W ork Week

YWW

MARKING DIAGRAM

TO−92

CASE 29

STYLE 1

123

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

COLLECTOR

BASE

EMITTER

COLLECTOR

BASE

EMITTER

NPN

PNP

2N6515, 2N6517, 2N6520

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0 ) 2N6515

2N6517, 2N6520

V(BR)CEO 250

350 −

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 Adc, IE = 0 ) 2N6515

2N6517, 2N6520

V(BR)CBO 250

350 −

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 Adc, IC = 0) 2N6515, 2N6517

2N6520

V(BR)EBO 6.0

5.0 −

−

Vdc

Collector Cutoff Current

(VCB = 150 Vdc, IE = 0) 2N6515

(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520

ICBO −

−50

nAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517

(VEB = 4.0 Vdc, IC = 0 ) 2N6520

IEBO −

−50

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 10 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 30 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 50 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 100 mAdc, V CE = 10 Vdc) 2N6515

2N6517, 2N6520

hFE 35

−

300

200

220

200

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat) −

−

0.30

0.35

0.50

1.0

Vdc

Base−Emitter Saturation V oltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

VBE(sat) −

−

0.75

0.85

0.90

Vdc

Base−Emitter On Voltage

(IC = 100 mAdc, V CE = 10 Vdc) VBE(on) − 2.0 Vdc

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

2N6515, 2N6517, 2N6520

http://onsemi.com

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 1)

(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz

Collector−Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.0 pF

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517

2N6520

Ceb −

−80

100

SWITCHING CHARACTERISTICS

Turn−On Time

(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton − 200 s

Turn−Off Time

(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff − 3.5 s

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION

Device Package Shipping†

2N6515 TO−92 5000 Unit / Bulk

2N6515RLRM TO−92 2000 Tape & Ammo Box

2N6517 TO−92 5000 Unit / Bulk

2N6517RLRA TO−92 2000 Tape & Reel

2N6517RLRP TO−92 2000 Tape & Ammo Box

2N6520RLRA TO−92 2000 Tape & Reel

2N6520RLRAG TO−92

(Pb−Free) 2000 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-

tions Brochure, BRD8011/D.

2N6515, 2N6517, 2N6520

http://onsemi.com

Figure 1. DC Current Gain

NPN 2N6515

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

hFE, DC CURRENT GAIN

200

100

VCE = 10 V TJ = 125°C

25°C

−55°C

Figure 2. DC Current Gain

NPN 2N6517

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

200

100

VCE = 10 V TJ = 125°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

VCE = −10 V

TJ = 125°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

100

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

hFE, DC CURRENT GAIN

100

TJ = 25°C

VCE = 20 V

f = 20 MHz

TJ = 25°C

VCE = −20 V

f = 20 MHz

200

100

Figure 3. DC Current Gain

PNP 2N6520

Figure 4. Current−Gain − Bandwidth Product

NPN 2N6515, 2N6517 Figure 5. Current−Gain − Bandwidth Product

PNP 2N6520

2N6515, 2N6517, 2N6520

http://onsemi.com

Figure 6. “On” Voltages

NPN 2N6515, 2N6517 Figure 7. “On” Voltages

PNP 2N6520

Figure 8. Temperature Coefficients

NPN 2N6515, 2N6517 Figure 9. Temperature Coefficients

PNP 2N6520

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

V, VOLTAGE (VOLTS)

1.4

1.2

0.6

0.8

1.0

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

2.5

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

Figure 10. Capacitance

NPN 2N6515, 2N6517

VR, REVERSE VOLTAGE (VOLTS)

2000.2 0.5 1.0 2.0 5.0 10 20 50 100

100

2.0

3.0

5.0

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

1.0

V, VOLTAGE (VOLTS)

0.4

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

−1.4

−1.2

−0.6

−0.8

−1.0

−0.4

−0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

RV, TEMPERATURE COEFFICIENTS (mV/ C)°

2.0

1.5

1.0

0.5

−0.5

−1.0

−1.5

−2.0

−2.5

RVC for VCE(sat)

RVB for VBE

25°C to 125°C

−55°C to

25°C

−55°C to 125°C

IB 10

RVC for VCE(sat)

RVB for VBE

25°C to 125°C

−55°C to

25°C

−55°C to 125°C

IB 10

C, CAPACITANCE (pF)

7.0

−20

−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −10

TJ = 25°CTJ = 25°C

Ccb

Ceb

Ccb

Ceb

2.5

2.0

1.5

1.0

0.5

−0.5

−1.0

−1.5

−2.0

−2.5

100

2.0

3.0

5.0

1.0

7.0

Figure 11. Capacitance

PNP 2N6520

2N6515, 2N6517, 2N6520

http://onsemi.com

Figure 12. Turn−On Time

NPN 2N6515, 2N6517

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

t, TIME (ns)

1.0k

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

100

200

300

500

700

t, TIME (ns)

td @ VBE(off) = 2.0 V

VCE(off) = 100 V

IC/IB = 5.0

TJ = 25°C

td @ VBE(off) = 2.0 V

VCE(off) = −100 V

IC/IB = 5.0

TJ = 25°C

t, TIME (ns)

10k

100

200

300

500

700

1.0k

2.0k

3.0k

5.0k

7.0k

100

200

300

500

700

1.0k

2.0k

VCE(off) = 100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

VCE(off) = −100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

1.0k

100

200

300

500

700

Figure 13. Turn−On Time

PNP 2N6520

Figure 14. Turn−Off Time

NPN 2N6515, 2N6517 Figure 15. Turn−Off Time

PNP 2N6520

2N6515, 2N6517, 2N6520

http://onsemi.com

Figure 16. Switching Time Test Circuit

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

10k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k

t, TIME (ms)

Figure 17. Thermal Response

500

200

100

5.0

2.0

1.0

0.5

IC, COLLECTOR CURRENT (mA)

0.5 1.0 2.0 5.0 10 20 50 100 200 500

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data

FIGURE A

PPPP

1/f

DUTYCYCLE t1f 

PEAK PULSE POWER = PP

TA = 25°C

1.0 ms

10 s

TC = 25°C

100 s

100 ms

+10.8 V

−9.2 V

+VCC

2.2 k 20 k

50  SAMPLING SCOPE

1/2MSD7000

1.0 k

VCC ADJUSTED

FOR VCE(off) = 100 V

APPROXIMATELY

−1.35 V (ADJUST FOR V(BE)off = 2.0 V)

PULSE WIDTH ≈ 100 s

tr, tf ≤ 5.0 ns

DUTY CYCLE ≤ 1.0%

FOR PNP TEST CIRCUIT,

REVERSE ALL VOLTAGE POLARITIES

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

ZJC(t) = r(t) • RJC TJ(pk) − TC = P(pk) ZJC(t)

ZJA(t) = r(t) • RJA TJ(pk) − TA = P(pk) ZJA(t)

CURRENT LIMIT

THERMAL LIMIT

(PULSE CURVES @ TC = 25°C)

SECOND BREAKDOWN LIMIT

CURVES APPLY

BELOW RATED VCEO

2N6515

2N6517, 2N6520

2N6515, 2N6517, 2N6520

http://onsemi.com

PACKAGE DIMENSIONS

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

TO−92

CASE 29−11

ISSUE AL NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any

liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over

time. All operating parameters, including “Typicals” must be validated for each customer application by customer ’s technical experts. SCILLC does not convey any license under

its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,

or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of

personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

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Phone: 81−3−5773−3850

2N6515/D

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