FUJITSU MICROELECTRONICS
DATA SHEET
Copyright©2008-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2009.8
ASSP
Spread Spectrum Clock Generator
MB88R157
DESCRIPTION
MB88R157 is a clock generator for EMI (Electro Magnetic Interference) reduction. The peak of unnecessary
radiation noise (EMI) can be attenuated by making the oscillation frequency slightly modulate periodically with
the internal modulator.
This product has a built-in non-volatile memory, so its frequency setting can memorize each system or application.
Also the product has a built-in oscillation stabilization circuit, so it is not necessary to use the external oscillation
stabilization capacitance.
FEATURES
Input frequency : 10 MHz to 40 MHz
Output frequency : 1 MHz to 134 MHz
Programmable of the parameter of N divider, M divider, K divider
(N divider : 11-bit, M divider : 12-bit, K divider : 7-bit)
Modulation rate : no modulation, ±0.25%, ±0.5%, ±0.75%, ±1.0%, ±1.25%, ±1.5%, ±1.75%
Equipped with a crystal oscillation circuit
Built-in oscillation stabilization capacitance : 5 pF to 10 pF (0.039 pF step range)
Clock output Duty : 45% to 55%
Clock Cycle-Cycle Jitter : Less than 100 ps (Output frequency is over 2 MHz)
Low power consumption by CMOS process 5.5 mA (24 MHz, Typ-sample, no load)
(Input frequency : 24 MHz, N divider parameter : 1000, M divider para meter : 1000, K divider parameter : 1)
Power supply voltage : 3.3 V ± 0.3 V
Operating temperature 20 °C to + 85 °C
Package : 8-pin plastic SOP
DS04-29132-3E
MB88R157
2DS04-29132-3E
PIN ASSIGNMENT
PIN DESCRIPTION
Pin name Pin no. I/O Description
XOUT 1 O Resonator connection pin
OE 2 I/O Clock output enable pin
L : output disable, H : output enable
Serial input/output pin (only program mode)
PEX 3 I Programmable enable setting pin
L : program mode, H : normal operation
VSS 4 GND pin
OUT 5 O Modulation clock output pin
VDD 6 Power supply voltage pin
NC 7 Non-connection pin (do not connect anything)
XIN 8 I Resonator connection pin/clock input pin
XOUT
OE
PEX
VSS
1
2
3
4
8
7
6
5
XIN
NC
VDD
OUT
TOP VIEW
(FPT-8P-M02)
MB88R157
DS04-29132-3E 3
I/O CIRCUIT TYPE
Note : About XIN and XOUT pins, please refer to the chapter of “CRYSTAL OSCILLATION CIRCUIT”.
Pin
name Circuit type Remarks
PEX CMOS hysteresis input
With pull-up resistor (50 kΩ)
OE With pull-up resistor (50 kΩ)
CMOS hysteresis input (Input)
In serial output mode
CMOS output
•I
OL = 3 mA
OUT CMOS output
•I
OL = 3 mA/7 mA selectable
(Selectable b y Output driver setting bit)
Hi-Z or “L” output at OE = “L”
(Selectable by OUT pin setting bit)
50 kΩ
50 kΩ
MB88R157
4DS04-29132-3E
HANDLING DEVICES
Preventing Latch-up
A latch-up can occur if, on this device, (a) a voltage higher than power supply voltage or a voltage lower than
GND is applied to an input or output pin or (b) a v oltage higher than the rating is applied between po w er supply
and GND. The latch-up, if it occurs, significantly increases the power supply current and may cause ther mal
destruction of an element. When you use this device, be very careful not to exceed the maximum rating.
Handling unused pins
Do not leave an unused input pin open, since it may cause a malfunction. Handle by, using a pull-up or pull-
down resistor.
To use external clock input
To use an external clock signal, input the clock signal to the XIN pin with the XOUT pin connected to nothing.
Power supply pins
Please design connecting the pow er supply pin of this device b y as lo w impedance as possible from the current
supply source.
We recommend connecting electrolytic capacitor (about 10 μF) and the ceramic capacitor (about 0.01 μF) in
parallel between power supply and GND near the device, as a bypass capacitor.
Oscillation circuit
Noise near the XIN pin and XOUT pin may cause the device to malfunction. Design printed circuit boards so
that electric wiring of XIN pin or XOUT pin and the resonator do not intersect other wiring.
Design the printed circuit board that surrounds the XIN pin and XOUT pin with ground in order to stabilize
operation.
MB88R157
DS04-29132-3E 5
BLOCK DIAGRAM
Charge
Pump
Frequency
phase
compare
Loop
Filter VCO
VDD
OE
XIN
XOUT
PEX
VSS
OUT
N div.
M div
K
div.
PLL block
Non-volatile memory
Serial-I/F Modulation logic
OSC
Output control
Serial data
A glitch-less IDAC (current output D/A converter) provides precise modulation, thereby dramatically reducing
EMI.
MB88R157
6DS04-29132-3E
MEMORY MAP
Address Function Remarks
bit0-bit11 M divider setting (12-bit) Selectable in the range of 1 to 4096
bit12-bit22 N divider setting (11-bit) Selectable in the range of 1 to 2048
bit23-bit29 K divider setting (7-bit) Selectable in the range of 1 to 128
bit30-bit32 L divider setting (3-bit) Modulation frequency setting
(the value is due to the input frequency)
bit33-bit36 Charge Pump setting (4-bit) Charge pump current setting due to VCO oscillation frequency
bit37-bit41 VCO Gain setting (5-bit) VCO gain setting due to VCO oscillation frequency
bit42-bit44 Modulation rate setting (3-bit) No modulation, ±0.25%, ±0.50%, ±0.75%, ±1.00%, ±1.25%,
±1.50%, ±1.75% are selectable
bit45 OUT pin setting (1bit) Selectable OUT pin situation at OE pin = L
0 : L output 1 : Hi-Z output
bit46 Output drive setting (1bit) OUT pin driving ability setting
0 : Ability small 1 : Ability large
bit47 Source clock dividing mode (1bit) Source clock selectable to K divider
0 : VCO output 1 : Source clock
bit48 PLL mode setting (1bit) 0 : Normal mode 1 : PLL mode
bit49-bit55 XIN oscillation stabilization
capacitance setting (7-bit) Capacitance is selectable from 5 pF to 10 pF by 0.039 pF Step
bit56-bit62 XOUT oscillation stabilization
capacitance setting (7-bit) Capacitance is selectable from 5 pF to 10 pF by 0.039 pF Step
bit63 Reserve
MB88R157
DS04-29132-3E 7
OPERATION SETTING
Frequency setting
Output frequency can be set by writing the internal memory to each divider parameter in the PLL block.
Internal oscillation frequency and output frequency can be calculated following expressions :
Internal oscillation frequency (fvco*) = Input frequency (fin) × (M+1) / (N+1)
* : Please set the fvco range from 20 MHz to 134 MHz.
Output frequency (fOUT*) = Input frequency (fin) × (M+1) / ( (N+1) × K)
* : Please set the fOUT range from 1 MHz to 134 MHz.
(Setting example)
fin = 27 MHz, fOUT = 60 MHz
M divider parameter : 1999 ( = 7CFH) , N divider parameter : 899 ( = 383H) , K divider par ameter : 1 ( = 01H)
27 × (1999+1) / ( (899+1) × 1) = 60 [MHz] (fvco = 27 × (1999+1) / (899+1) = 60 [MHz])
Note: Recommended value of each divider parameter is different at PLL mode and normal mode. Please refer
and confirm the recommended value by our support tool. Contact the sales representatives for details on
the support tools.
Modulation frequency setting
Modulation frequency can be set by writing the internal memory to L divider parameter.
The average of modulation frequency can be calculated following expressions :
Note: Please ref er and confirm the recommended value b y our support tool. Contact the sales representatives f or
details on the support tools.
Modulation rate setting
Modulation rate can be selectable from no modulation, ±0.25%, ±0.50%, ±0.75%, ±1.00%, ±1.25%, ±1.50%,
±1.75%.
Input frequency
266 × (L+1) (L = 1, 2, 3, 4, 5, 6, 7)
bit44 bit43 bit42 Modulation rate setting
0 0 0 No modulation
001±0.25%
010±0.50%
011±0.75%
100±1.00%
101±1.25%
110±1.50%
111±1.75%
MB88R157
8DS04-29132-3E
Charge Pump setting, VCO gain setting
Note: Please ref er and confirm the recommended value b y our support tool. Contact the sales representatives f or
details on the support tools.
OUT pin setting
OUT pin situation can be selected at OE pin “L” input.
Note : Internal oscillation circuit has been operating when OE pin is input “L”.
Output drive ability setting
Output drive ability of OUT pin can be selected.
Source clock dividing setting
Source clock to K divider can be selected.
When “input frequency” is selected, source clock or its divided clock can be output. But modulation setting is
not enable.
Note: When “input frequency ” is selected, internal oscillation circuit has been operating. About M and N divider
parameter setting, please ref er and confirm the recommended value b y our support tool. Contact the sales
representatives for details on the support tools.
PLL mode setting
It can be selected normal mode and PLL mode by bit48 setting in the memor y map. PLL mode is good jitter
specification at non modulation. When the mode is selected, it becomes non modulation setting, the resistance
and capacitance value of the loop filter is changed, so oscillation specification is change.
Note: When PLL mode is selected, recommended value of M, N, K divider is changed. Please refer and confirm
the recommended value by our support tool. Contact the sales representatives for details on the support tools.
bit45 OUT pin situation
0 “L” output
1 “Hi-Z” output
bit46 OUT pin drive ability
0 Small (IOL = 3 mA)
1 Large (IOL = 7 mA)
bit47 Source clock to K divider
0 VCO output clock
1 Input clock (Source clock)
bit48 Operation mode
0 SSCG mode
1 PLL mode
MB88R157
DS04-29132-3E 9
Oscillation stabilization capacitance setting
The capacitance connected XIN and XOUT pin can change each from 5 pF to 10 pF b y writing to bit49 to bit55
and bit56 to bit62 in the memory map.
(Setting example)
bit49 to bit55 : “0000000” bit56 to bit62 : “0100001”
XIN pin Oscillation stabilization capacitance : 5.000 pF
XOUT pin Oscillation stabilization capacitance : 7.599 pF
XIN XOUT Capacitance [pF]
bit49 bit56 0.039
bit50 bit57 0.079
bit51 bit58 0.157
bit52 bit59 0.315
bit53 bit60 0.630
bit54 bit61 1.260
bit55 bit62 2.520
XOUTXIN
5pF5pF
bit49
bit50
bit51
bit52
bit53
bit54
bit55 bit62
bit61
bit60
bit59
bit58
bit57
bit56
MB88R157
10 DS04-29132-3E
pa
MEMORY ACCESS
Read/write to the built-in non-volatile memory is enabled through the serial communication with the OE pin
functioned as the I/O pin.
Set for the communication protocol. Also, set the transfer speed as 1/512 of the source clock.
Asynchronous transfer mode of UART
LSB fast
•NRZ format
Bit length: 8 bits
No parity
Stop bit: 1 bit
1. Set the PEX pin to “L” more than 30 ms after this device is turned on, input a command from the OE pin set
MB88R157 into memory access mode.(When a command is input by serial communication, data of “FDH” is
sent.)
Note: When memory access is available, source clock can be output from the OUT pin.
Fix the PEX pin to “H”, or fix the OE pin to “H” or “L” until command input.
2. At writing, “00H” is sent serially, and at reading, “40H” is sent.
Note: This device needs to stop outputting to the OE pin of the transferred device within 15 μs after transferring
“40H” serially at the reading state and place it to a receivable state.
3. At writing : Send 8-byte data blocks from the lower address of the memory map in turn with more than 100 μs
between each data block.
At read : This device outputs 8-byte data blocks from the lower address of the memory map in turn.
4. Repeat the operations of 2. and 3. for re-writing and re-reading.
To operate the device using the written data, turn on the power again.
However, the oscillation stabilization capacitance is set simultaneously with writing to memory. When the
oscillation stabilization capacitance and the crystal oscillation frequency are adjusted, change the oscillation
stabilization capacitance value so that the clock output from the OUT pin is set to the desired frequency.
VDD
OE
30 ms
2.5 V
OUT
PEX
Memory access
mode signal
(internal)
Source clock output
Transfer sequence
MB88R157
DS04-29132-3E 11
Interconnection example
* 1 : Set the UO pin to Hi-z to read from memory, as the UO pin serves for serial I/O.
UO : UART serial data output pin
UI : UART serial data input pin
UCK : UART serial synchronous clock I/O pin
*2 : Because the transfer rate is set to 1/512 of source oscillation in MB88R157, the clock generator is used as
shown in above figure, so that the transfer speed is set to 1/512 of source clock in MB88R157. However, the
clock generator is not needed if the transfer speed can be maintained from an internal clock of the baud rate
generator of the UART.
MB88R157
OE
UO
UI
UCK
Clock
Generator
*1
*2
Microcontroller with
built-in UART etc.
MB88R157
12 DS04-29132-3E
ABSOLUTE MAXIMUM RATINGS
* : This parameter is based on VSS = 0.0 V
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
Parameter Symbol Rating Unit
Min Max
Power supply voltage* VDD 0.5 + 4.0 V
Input voltage* VIVSS 0.5 VDD + 0.5 V
Output voltage* VOVSS 0.5 VDD + 0.5 V
Storage temperature TST 55 + 125 °C
Operation junction temperature TJ 40 + 125 °C
Output current IO 14 + 14 mA
Overshoot VIOVER VDD + 1.0 (tOVER 50 ns) V
Undershoot VIUNDER VSS 1.0 (tUNDER 50 ns) V
VDD
VSS
Input pin
Overshoot/Undershoot
tUNDER 50 ns
VIOVER VDD + 1.0 V
tOVER 50 ns VIUNDER VSS 1.0 V
MB88R157
DS04-29132-3E 13
RECOMMENDED OPERATING CONDITONS (VSS = 0.0 V)
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
representatives beforehand.
Parameter Symbol Pin name Conditions Value Unit
Min Typ Max
Power supply voltage VDD VDD 3.0 3.3 3.6 V
“H” level input voltage VIH OE, PEX,
XIN
Input slew rate for
XIN pin only
3 V/ns
VDD × 0.80 VDD + 0.3 V
“L” level input voltage VIL VSS VDD × 0.20 V
Input clock duty cycle tDCI XIN 10 MHz to 50 MHz 40 50 60 %
Operating temperature Ta
Write to the internal
non-volatile memory + 20 + 50 °C
Operating test after
the re-flow
Other than those
above 20 + 85 °C
XIN
1.5 V
ta
tb
Input clock duty cycle (tDCI = tb / ta)
MB88R157
14 DS04-29132-3E
ELECTRICAL CHARACTERISTICS
DC Characteristics (Ta = 20 °C to + 85 °C, VDD = 3.3 V ± 0.3 V, VSS = 0.0 V)
Parameter Symbol Pin name Conditions Value Unit
Min Typ Max
Power supply current
ICC
VDD
24 MHz input (Crystal) ,
24 MHz internal oscillation,
24 MHz output
no load capacitance
5.5 7.0 mA
ICC2
50 MHz input clock,
134 MHz internal oscillation,
134 MHz output
15 pF load capacitance
⎯⎯26 mA
Output voltage
VOH
OUT
“H” level output
Driving voltage (low) IOH = 3 mA,
Driving voltage (high) IOH = 7 mA
VDD
0.5 VDD V
VOL “L” level output
Driving voltage (low) IOL = 3 mA,
Driving voltage (high) IOL = 7 mA VSS 0.4 V
Pull-up resistance RPU OE, PEX 25 50 200 kΩ
Load capacitance CIN XIN, OE,
PEX
Ta = + 25 °C,
VDD = VI = 0.0 V,
f = 1 MHz ⎯⎯16 pF
MB88R157
DS04-29132-3E 15
AC characteristics (1) (Ta = 20 °C to + 85 °C, VDD = 3.3 V ± 0.3 V, VSS = 0.0 V)
* : The duty cycle value (tDCR) of the source clock output depends on the duty cycle of input clock tDCI. Either case
of A or B will be guaranteed.
A. Resonator : Oscillating with the resonator connected with XIN, XOUT
B. External clock input : The input level is Full - swing (VSS - VDD).
Parameter Sym-
bol Pin
name Conditions Value Unit
Min Typ Max
Crystal oscillation
frequency fxXIN,
XOUT Fundamental oscillation 10 40 MHz
Input frequency fin XIN 10 40 MHz
Internal oscillation
frequency fVCO ⎯⎯ 20 134 MHz
Output frequency fOUT
OUT
Operation in PLL mode
and at non modulation 1134 MHz
Operation at modulation 16 134
Output slewing rate SR
0.4 V to 2.4 V
load capacitance 15 pF
Driving ability small:
at 1 MHz to 60 MHz out-
put
Driving ability large:
at 60 MHz to 134 MHz
output
0.3 ⎯⎯V/ns
Output impedance ZODriving ability small 75 Ω
Driving ability large 38
Output clock duty
cycle
tDCC VCO clock output 45 55
%
tDCR At reference clock
output tDCI10* tDCI+10*
Modulation
frequency (number
of clocks par one
modulation)
fMOD
(nMOD)
fin/ (224 ×
(L+1) )
(224 × (L+1) )
fin/ (266 ×
(L+1) )
(266 × (L+1) )
fin/ (308 ×
(L+1) )
(308 × (L+1) )
kHz
(clks)
Power supply time tRVDD 0.2 V to 3.0 V 0.05 20 ms
Lock-up time tLK
OUT
⎯⎯270/fin+5 270/fin+10 ms
Cycle-cycle jitter tJC
No load
capacitance,
Ta = + 25 °C
VDD = 3.3 V
fOUT
2 MHz ⎯⎯100 ps-
rms
fOUT<
2 MHz ⎯⎯150
Output stop time
from OE exit. tOD ta = 1 / fOUT ⎯⎯2 × tans
Output start time
after OE entry tOE ta = 1 / fOUT ⎯⎯2 × tans
MB88R157
16 DS04-29132-3E
DEFINITION of MODULATION FREQUENCY and NUMBER of INPUT CLOCKS PER
MODULATION
This product contains the modulation period to realize the efficient EMI reduction.
The modulation period FMOD depends on the input frequency and changes between FMOD (Min) and FMOD (Max).
Furthermore, the typical value of the electrical characteristics is equivalent to the average value of the modulation
period FMOD.
TURNING ON POWER SUPPLY AND LOCK-UP TIME
t
FMOD(Min) FMOD(Max)
NMOD(Max) NMOD(Min)
t
V
tR
VDD 3.0 V
0.2 V
XIN
OUT
tLK
MB88R157
DS04-29132-3E 17
OUTPUT CLOCK DUTY CYCLE (tDCC = tb / ta)
INPUT FREQUENCY (fin = 1 / tin)
OUTPUT SLEW RATE (SR)
CYCLE-CYCLE JITTER (tJC = | tn tn+1 | )
OUT
VDD/2
t
a
t
b
tin
XIN 0.8 V
DD
t
f
t
r
2.4 V
0.4 V
OUT
t
n+1
t
n
OUT
MB88R157
18 DS04-29132-3E
OUTPUT TIMING AT OE CHANGE
tODta
OE
OUT
VDD × 0.2[V]
tOE
OE
OUT
VDD × 0.8[V]
MB88R157
DS04-29132-3E 19
AC characteristics (2) (Serial interface timing) (Ta = 20 °C to + 85 °C, VDD = 3.3 V ± 0.3 V, VSS = 0.0 V)
P arameter Symbol Pin name Conditions Value Unit
Min Typ Max
Cycle time of transfer
and receiver tSCYC
OE
(tin × 512)
× 0.93 tin × 512 (tin × 512)
× 1.025 μs
Read operation
Read command receive
OE in read data output tRDO 15 ⎯⎯μs
Read operation
Final read data output
OE pin input mode exchanged tOTI ⎯⎯65 μs
D0 D1 D2 D3D4 D5 D6 D7
tSCYC
VDD*0.2
OE
VDD*0.8
OE D7 Stop bit Hi-z
tRDO
tOTI
Start bit
OE D7 Stop bit Hi-z
D0
MB88R157
20 DS04-29132-3E
INTERCONNECTION CIRCUIT EXAMPLE
CRYSTAL OSCILLATION CIRCUIT
The figure below sho ws the connection example about general resonator. The oscillation circuit has the built-in
feedback resistor (500 kΩ) and oscillation stabilization capacitance (C1 and C2).
C1 and C2 value can be changeable by setting bit49 to bit55 and bit56 to bit62 in memor y. It is necessar y to
set suitable parameter for each resonator.
To use an external clock signal (without using the resonator), input the clock signal to the XIN pin with the XOUT
pin connected to nothing.
1
2
3
4
8
7
6
5
X
tal
MB88R157
C
1
C
2
R
1
C1 : Capacitor of 10 μF or higher
C2 : Capacitor of about 0.01 μF (connect a capacitor of good high frequency property
(ex. laminated ceramic capacitor) to close to this device)
R1 : Impedance matching resistor for board pattern
Rf (500 kΩ)
C1C2
XIN pin XOUT pin
LSI internal
LSI external
Fundamental resonator
MB88R157
DS04-29132-3E 21
ORDERING INFORMATION
Part n umber Package
MB88R157PNF-G-JNE1
MB88R157PNF-G-JN-ERE1
MB88R157PNF-G-JN-EFE1
8-pin plastic SOP
(FPT-8P-M02)
MB88R157
22 DS04-29132-3E
PACKAGE DIMENSION
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
8-pin plastic SOP Lead pitch 1.27 mm
Package width
×
package length
3.9 × 5.05 mm
Lead shape Gullwing
Sealing method Plastic mold
Mounting height 1.75 mm MAX
Weigh t 0.0 6 g
8-pin plastic SOP
(FPT-8P-M02)
(FPT-8P-M02)
C
2002 FUJITSU LIMITED F08004S-c-4-7
1.27(.050)
3.90±0.30 6.00±0.40
.199 –.008
+.010
–0.20
+0.25
5.05
0.13(.005)
M
(.154±.012) (.236±.016)
0.10(.004)
14
58
0.44±0.08
(.017±.003)
–0.07
+0.03
0.22
.009 +.001
–.003
45˚
0.40(.016) "A" 0~8˚
0.25(.010)
(Mounting height)
Details of "A" part
1.55±0.20
(.061±.008)
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
*
1
*
2
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
©2002-2008 FUJITSU MICROELECTRONICS LIMITED F08004S-c-4-8
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
MB88R157
DS04-29132-3E 23
MEMO
MB88R157
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,
Shinjuku-ku, Tokyo 163-0722, Japan
Tel: +81-3-5322-3329
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
FUJITSU MICROELECTRONICS AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
Europe
FUJITSU MICROELECTRONICS EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
Korea
FUJITSU MICROELECTRONICS KOREA LTD.
206 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fmk/
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://www.fmal.fujitsu.com/
FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.
Rm. 3102, Bund Center, No.222 Yan An Road (E),
Shanghai 200002, China
Tel : +86-21-6146-3688 Fax : +86-21-6335-1605
http://cn.fujitsu.com/fmc/
FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.
10/F., World Commerce Centre, 11 Canton Road,
Tsimshatsui, Kowloon, Hong Kong
Tel : +852-2377-0226 Fax : +852-2376-3269
http://cn.fujitsu.com/fmc/en/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS
or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or
other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to
the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear
facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon
system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of
the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department