AUTOMOTIVE GRADE AUIRFP2602 Features * Advanced Process Technology * Low On-Resistance * 175C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax * Lead-Free, RoHS Compliant * Automotive Qualified * V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number Package Type AUIRFP2602 TO-247AC 24V 1.25m 1.6m 380A 180A G D S TO-247AC AUIRFP2602 G Gate D Drain Standard Pack Form Quantity Tube 25 S Source Orderable Part Number AUIRFP2602 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 380 ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation 270 180 1580 380 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 2.5 20 400 1011 See Fig.14,15, 17a, 17b VGS EAS EAS (Tested) IAR EAR TJ TSTG Thermal Resistance Symbol RJC RCS RJA A W W/C V mJ A mJ -55 to + 175 C 300 10 lbf*in (1.1N*m) Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient --- 0.24 --- 0.40 --- 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2016-2-16 AUIRFP2602 Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 24 --- --- 2.0 230 --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.02 --- V/C Reference to 25C, ID = 1mA 1.25 1.6 m VGS = 10V, ID = 180A --- 4.0 V VDS = VGS, ID = 250A --- --- S VDS = 10V, ID = 180A --- 20 VDS =24 V, VGS = 0V A --- 250 VDS =24V,VGS = 0V,TJ =125C --- 200 VGS = 20V nA --- -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge --- 260 390 Gate-to-Source Charge --- 72 --- Qgs Qgd Gate-to-Drain Charge --- 100 --- td(on) Turn-On Delay Time --- 70 --- Rise Time --- 490 --- tr td(off) Turn-Off Delay Time --- 150 --- Fall Time --- 270 --- tf LD Internal Drain Inductance --- 5.0 --- LS Internal Source Inductance --- 13 --- Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Output Capacitance Coss Effective Output Capacitance Coss eff. Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time --- 11220 --- --- 4800 --- --- 2660 --- --- 13020 --- 4800 --- 6710 --- ID = 180A nC VDS = 12V VGS = 10V VDD = 12V ID = 180A ns RG= 2.5 VGS = 10V Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V pF VDS = 19V = 1.0KHz VGS=0V, VDS=1.0V , = 1.0KHz VGS=0V, VDS=19V , = 1.0KHz VGS = 0V, VDS = 0V to 19V Min. Typ. Max. Units --- --- 380 --- --- 1580 --- --- --- --- 55 56 1.3 83 84 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C,IS = 180A,VGS = 0V V ns TJ = 25C ,IF = 180A, VDD =12V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Limited by TJmax, starting TJ = 25C, L = 0.025mH, RG = 25, IAS = 180A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. R is measured at TJ of approximately 90C. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 180A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 2016-2-16 AUIRFP2602 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 4.5V 4.5V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 10 1 0.1 1 0.1 10 Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 300 TJ = 25C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (A) 1000 T J = 175C 100 T J = 25C 10 VDS = 10V 60s PULSE WIDTH 250 200 TJ = 175C 150 100 50 VDS = 10V 380s PULSE WIDTH 0 1.0 2 3 4 5 6 7 8 0 9 40 80 120 160 200 ID, Drain-to-Source Current (A) VGS , Gate-to-Source Voltage (V) Fig. 4 Typical Forward Transconductance vs. Drain Current Fig. 3 Typical Transfer Characteristics 1.8 T J = 175C 100 T J = 25C 10 1 VGS = 0V 1.6 ID = 180A VGS = 10V 1.4 (Normalized) R DS(on) , Drain-to-Source On Resistance 1000 ISD, Reverse Drain Current (A) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 1.2 1.0 0.8 0.6 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD , Source-to-Drain Voltage (V) Fig 5. Typical Source-Drain Diode Forward Voltage 3 1 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (C) Fig 6. Normalized On-Resistance vs. Temperature 2016-2-16 AUIRFP2602 100000 12.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED ID= 180A VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) Crss = Cgd Coss = Cds + Cgd C iss Coss 10000 C rss 10.0 VDS = 19V VDS = 12V 8.0 6.0 4.0 2.0 0.0 1000 1 10 0 100 50 Fig. 7 Typical Capacitance vs. Drain-to-Source Voltage 150 200 250 300 Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 10000 400 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 350 1msec 100 10msec 10 Tc = 25C Tj = 175C Single Pulse Limited By Package 300 100sec ID, Drain Current (A) ID, Drain-to-Source Current (A) 100 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 250 200 150 100 DC 50 1 0 1 10 100 25 50 VDS , Drain-to-Source Voltage (V) 75 100 125 150 175 T C , Case Temperature (C) Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 J 0.05 0.01 0.001 1E-006 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 Ci= i/Ri Ci= i/Ri 0.0001 3 4 4 C Ri (C/W) I (sec) 0.0224 0.00002 0.0641 0.000095 0.1778 0.00169 0.1362 0.013883 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 R4 R4 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-2-16 AUIRFP2602 5.0 ID TOP 54A 95A BOTTOM 180A 1400 1200 VGS(th) , Gate Threshold Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) 1600 1000 800 600 400 200 4.0 3.0 ID = 250A ID = 1.0mA ID = 1.0A 2.0 1.0 0 25 50 75 100 125 150 -75 -50 -25 175 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Starting T J , Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. Drain Current Fig 13. Threshold Voltage vs. Temperature 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 400 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 180A EAR , Avalanche Energy (mJ) 350 300 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature 5 2016-2-16 AUIRFP2602 Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A 0.01 I AS Fig 17a. Unclamped Inductive Test Circuit Fig 17b. Unclamped Inductive Waveforms Id Vds Vgs L VCC DUT 0 Vgs(th) 1K Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit Fig 19a. Switching Time Test Circuit 6 Qgd Qgodr Fig 18b. Gate Charge Waveform Fig 19b. Switching Time Waveforms 2016-2-16 AUIRFP2602 TO-247AC Package Outline (Dimensions are TO-247AC Part Marking Information Part Number AUIRFP2602 Date Code YWWA IR Logo XX * Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 2016-2-16 AUIRFP2602 Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant TO-247AC N/A Class M4 (+/- 800V) AEC-Q101-002 Class H2 (+/- 4000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 2/16/2016 Comments * * Updated datasheet with corporate template Corrected typo, Capacitance test condition from VDS=25V to VDS=19V on page 2 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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