MPSA55 ... MPSA56
MPSA55 ... MPSA56
PNP General Purpose Si-Epi tax ial Pla narT ransis t or s
Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP
Version 2006-07-25
Dimensions - Maße [mm]
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
MPSA55 MPSA56
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 60 V 80 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 60 V 80 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 4 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) - IC500 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 1 A
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 10 mA, - VCE = 1 V
- IC = 100 mA, - VCE = 1 V
hFE
hFE
100
100
–
–
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 100 mA, - IB = 10 mA - VCEsat ––0.25 V
Base-Emitter voltage – Basis-Emitter-Spannung 2)
- IC = 100 mA, - VCE = 1 V - VBE – – 1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 60 V, (E open)
- VCB = 80 V, (E open)
MPSA55
MPSA56
- ICBO
- ICBO
–
–
–
–
100 nA
100 nA
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
16
18
9
2 x 2.54
EBC