NXP Semiconductors Technical Data Document Number: AFM907N Rev. 1, 05/2019 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET AFM907N Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Wideband Performance (In 350-520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW) Frequency (MHz) (1) Pin (W) Gps (dB) D (%) Pout (W) 350 0.25 15.2 56.6 8.4 435 0.25 15.5 61.5 8.9 520 0.25 15.0 64.2 7.9 136-941 MHz, 8 W, 7.5 V WIDEBAND AIRFAST RF POWER LDMOS TRANSISTOR Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) Pout (W) 520 (2) 20.7 73.9 8.4 DFN 4 6 Load Mismatch/Ruggedness Frequency (MHz) Signal Type 520 (2) CW VSWR Pin (dBm) Test Voltage > 65:1 at all Phase Angles 21 (3 dB Overdrive) 10.8 Result N.C. 2 16 N.C. 15 N.C. No Device Degradation Gate 3 14 Drain Gate 4 13 Drain Gate 5 12 Drain Gate 6 11 Drain N.C. 7 N.C. 8 10 N.C. 9 N.C. N.C. 1 1. Measured in 350-520 MHz UHF broadband reference circuit (page 5). 2. Measured in 520 MHz narrowband RF test fixture (page 9). Features Characterized for operation from 136 to 941 MHz Unmatched input and output allowing wide frequency range utilization Integrated ESD protection Integrated stability enhancements Wideband -- full power across the band Exceptional thermal performance Extreme ruggedness High linearity for: TETRA, SSB (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Typical Applications Output stage VHF band handheld radio Output stage UHF band handheld radio Output stage for 700-800 MHz handheld radio 2017, 2019 NXP B.V. RF Device Data NXP Semiconductors AFM907N 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -0.5, +30 Vdc Gate--Source Voltage VGS -6.0, +12 Vdc Operating Voltage VDD 0 to 12.5 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature Range TC -40 to +150 C Operating Junction Temperature (1,2) TJ -40 to +150 C Total Device Dissipation @ TC = 25C Derate above 25C PD 65.7 0.52 W W/C Symbol Value (2,3) Unit RJC 1.9 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 7.4 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C, passes 1000 V Charge Device Model (per JESD22--C101) C3, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 7.5 Vdc, VGS = 0 Vdc) IDSS -- -- 2 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 110 Adc) VGS(th) 1.6 2.1 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.1 Adc) VDS(on) -- 0.12 -- Vdc gfs -- 9.8 -- S Reverse Transfer Capacitance (VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.4 -- pF Output Capacitance (VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 55.2 -- pF Input Capacitance (VDS = 7.5 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss -- 95.7 -- pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 7.5 Vdc, ID = 3 Adc) Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. (continued) AFM907N 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Narrowband Performance - 520 MHz (In NXP Narrowband 520 MHz RF Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 18.5 dBm, f = 520 MHz Common--Source Amplifier Output Power Pout -- 8.4 -- W D -- 73.9 -- % Drain Efficiency Load Mismatch/Ruggedness (In NXP Narrowband 520 MHz RF Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR 520 CW > 65:1 at all Phase Angles Pin (dBm) Test Voltage, VDD Result 10.8 No Device Degradation 21 (3 dB Overdrive) Table 6. Ordering Information Device AFM907NT1 Tape and Reel Information T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel Package DFN 4 6 AFM907N RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 100 Ciss Coss Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 10 1 Crss 0 2 4 6 8 10 12 14 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage MTTF (HOURS) 109 VDD = 7.5 Vdc 108 ID = 1.1 Amps 1.5 Amps 107 1.8 Amps 106 90 100 110 120 130 140 150 160 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com/RF/calculators. Figure 3. MTTF versus Junction Temperature - CW AFM907N 4 RF Device Data NXP Semiconductors 350-520 MHz UHF BROADBAND REFERENCE CIRCUIT Table 7. 350-520 MHz UHF Broadband Performance (In NXP UHF Broadband Reference Circuit, 50 ohm system) VDD = 7.5 Vdc, IDQ = 200 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 350 0.25 15.2 56.6 8.4 435 0.25 15.5 61.5 8.9 520 0.25 15.0 64.2 7.9 AFM907N RF Device Data NXP Semiconductors 5 350--520 MHz UHF BROADBAND REFERENCE CIRCUIT -- 0.83 1.88 (21.1 mm 47.8 mm) J1 C1 C14 C12 C7 C2 C13 C15 B1 C11 C16 L1 L3 L6 C6 C3 R3 D93169 R1 Q1 R2 C4 C10 L4 L2 C8 C9 C5 L5 AFM907N Rev. 0 Figure 4. AFM907N UHF Broadband Reference Circuit Component Layout -- 350-520 MHz Table 8. AFM907N UHF Broadband Reference Circuit Component Designations and Values -- 350-520 MHz Part Description Part Number Manufacturer B1 30 , 6 A Ferrite Bead MPZ2012S300AT000 TDK C1, C12 100 pF Chip Capacitor ATC600F101JT250XT ATC C2 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C3, C5 36 pF Chip Capacitor ATC600F360JT250XT ATC C4, C8, C9 27 pF Chip Capacitor ATC600F270JT250XT ATC C6 1 F Chip Capacitor GRM21BR71H105KA12L Murata C7 0.01 F Chip Capacitor C0805C103K5RAC Kemet C10 18 pF Chip Capacitor ATC600F180JT250XT ATC C11 9.1 pF Chip Capacitor ATC600F9R1BT250XT ATC C13 240 pF Chip Capacitor ATC600F241JT250XT ATC C14 2.2 F Chip Capacitor GRM31CR71H225KA88L Murata C15 4.7 F 50 V Chip Capacitor GRM31CR71H475KA12L Murata C16 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata J1 Right-Angle Breakaway Header (3 Pins) 22-28-8360 Molex L1, L6 8.9 nH Inductor 0806SQ8N9 Coilcraft L2 1.65 nH Inductor, 2 Turns 0906-2JLC Coilcraft L3, L4 17 nH Inductor 0908SQ17N Coilcraft L5 2.55 nH Inductor, 3 Turns 0906-3JLC Coilcraft Q1 RF Power LDMOS Transistor AFM907N NXP R1, R2 1.5 , 1/4 W Chip Resistor RC1206FR-071R5L Yageo R3 51 , 1/4 W Chip Resistor CRCW120651R0FKEA Vishay PCB Shengyi S1000--2, 0.020, r = 4.8 D93169 MTL AFM907N 6 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS -- 350-520 MHz UHF BROADBAND REFERENCE CIRCUIT 23 50 40 19 17 30 Gps 15 14 12 13 11 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 60 D 21 D, DRAIN EFFICIENCY (%) 70 25 10 Pout 8 9 6 7 VDD = 7.5 Vdc, Pin = 0.25 W, IDQ = 200 mA 5 340 360 380 400 420 440 460 480 500 4 540 520 f, FREQUENCY (MHz) Figure 5. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power VDD = 7.5 Vdc f= 435 MHz 8 1.2 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 10 Pin = 24 dBm 6 4 Pin = 21 dBm 2 Detail A 0.8 0.5 1.0 1.5 2.0 2.5 3.0 0.4 Pin = 21 dBm 0.2 0 3.5 Pin = 24 dBm 0.6 0 0 VDD = 7.5 Vdc f = 435 MHz 1.0 0 0.5 1.0 1.5 2.0 2.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 4.0 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Gate--Source Voltage 70 D 21 435 MHz 350 MHz 19 17 Gps 15 435 MHz 350 MHz 13 520 MHz 11 9 7 0 0.05 50 30 10 12 9 Pout 435 MHz D, DRAIN EFFICIENCY (%) 23 Gps, POWER GAIN (dB) 90 520 MHz 6 350 MHz 3 VDD = 7.5 Vdc, IDQ = 200 mA 520 MHz 0 0.15 0.20 0.25 0.30 0.35 0.10 Pout, OUTPUT POWER (WATTS) 25 Pin, INPUT POWER (WATTS) Figure 7. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFM907N RF Device Data NXP Semiconductors 7 350-520 MHz BROADBAND REFERENCE CIRCUIT Zo = 5 f = 520 MHz Zsource f = 350 MHz f = 520 MHz Zload f = 350 MHz f MHz Zsource Zload 350 1.9 + j1.6 3.1 -- j0.7 360 2.0 + j1.9 3.2 -- j0.6 370 2.0 + j2.0 3.2 -- j0.5 380 2.1 + j2.2 3.3 -- j0.5 390 2.2 + j2.4 3.3 -- j0.5 400 2.3 + j2.6 3.2 -- j0.5 410 2.3 + j2.7 3.2 -- j0.5 420 2.4 + j2.8 3.1 -- j0.6 430 2.5 + j2.9 3.0 -- j0.6 440 2.6 + j3.0 2.8 -- j0.6 450 2.7 + j3.1 2.7 -- j0.6 460 2.7 + j3.2 2.5 -- j0.6 470 2.8 + j3.2 2.3 -- j0.5 480 2.9 + j3.3 2.1 -- j0.5 490 3.0 + j3.4 2.0 -- j0.4 500 3.0 + j3.4 1.8 -- j0.3 510 3.1 + j3.5 1.7 -- j0.1 520 3.2 + j3.5 1.5 + j0.04 Zsource = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from Zload drain to ground. 50 Input Matching Network Zsource AFM907N 8 Output Matching Network Device Under Test 50 Zload Figure 8. Broadband Series Equivalent Source and Load Impedance -- 350-520 MHz RF Device Data NXP Semiconductors 520 MHz NARROWBAND RF TEST FIXTURE -- 5.0 3.0 (12.70 cm 7.62 cm) C3 C1 C14 B1 C2 C7 C13 C12 C4 C15 C9 R1 L1 C5 C11 L2 C8 C6 C10 AFM907N Rev. 0 D88764 Figure 9. AFM907N Narrowband RF Test Fixture Component Layout -- 520 MHz Table 9. AFM907N Narrowband RF Test Fixture Component Designations and Values -- 520 MHz Part Description Part Number Manufacturer B1 Short RF Bead 2743019447 Fair-Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C14 0.1 F Chip Capacitor CDR33BX104AKWS AVX C3, C13 0.01 F Chip Capacitor C0805C103K5RAC Kemet C4, C12 180 pF Chip Capacitor ATC100B181JT300XT ATC C5 33 pF Chip Capacitor ATC100B130JT500XT ATC C6 20 pF Chip Capacitor ATC100B200JT500XT ATC C7 22 pF Chip Capacitor ATC100B220JT500XT ATC C8, C9 16 pF Chip Capacitor ATC100B160JT500XT ATC C10 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C11 30 pF Chip Capacitor ATC100B300JT500XT ATC C15 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp L1 22 nH Inductor, 7 Turns B07TJLC Coilcraft L2 5 nH Inductor, 2 Turns A02TKLC Coilcraft R1 5.6 , 1/4 W Chip Resistor CRCW12065R60FKEA Vishay PCB Rogers RO4350B, 0.030, r = 3.66 D88764 MTL AFM907N RF Device Data NXP Semiconductors 9 TYPICAL CHARACTERISTICS -- 520 MHz NARROWBAND RF TEST FIXTURE Pout, OUTPUT POWER (WATTS) 12 VDD = 7.5 Vdc f= 520 MHz 10 Pin = 18.5 dBm 8 Pin = 15.5 dBm 6 4 2 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE--SOURCE VOLTAGE (VOLTS) 25 90 24 70 D 50 22 30 21 10 20 12 Pout 19 10 18 8 17 15 14 6 Gps 16 4 2 VDD = 7.5 Vdc, IDQ1 = 100 mA, f = 520 MHz 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 23 D, DRAIN EFFICIENCY (%) Figure 10. Output Power versus Gate--Source Voltage 0 0.40 Pin, INPUT POWER (WATTS) Figure 11. Power Gain, Drain Efficiency and Output Power versus Input Power AFM907N 10 RF Device Data NXP Semiconductors 520 MHz PRODUCTION TEST FIXTURE f MHz Zsource Zload 520 0.71 + j1.98 1.73 + j1.64 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Zload Figure 12. Series Equivalent Source and Load Impedance -- 520 MHz AFM907N RF Device Data NXP Semiconductors 11 2.00 5.35 2.0 solder pad with thermal via structure. All dimensions in mm. 3.00 5.35 0.56 0.35 10 0.80 4 0.65 Figure 13. PCB Pad Layout for 16--Lead DFN 4 6 AFM907N WLYW Figure 14. Product Marking AFM907N 12 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS AFM907N RF Device Data NXP Semiconductors 13 AFM907N 14 RF Device Data NXP Semiconductors AFM907N RF Device Data NXP Semiconductors 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2017 Initial release of data sheet 1 May 2019 Table 1, Max Ratings table, Operating Voltage: changed 7.5 Vdc to 12.5 Vdc to reflect additional qualification data, p. 2 Table 9, Narrowband RF Test Fixture Component Designations and Values -- 520 MHz: corrected C6 to 20 pF ATC100B200JT500XT and C7 to 22 pF, p. 9 Fig. 12, Series Equivalent Source and Load Impedance -- 520 MHz: added to data sheet, p. 11 AFM907N 16 RF Device Data NXP Semiconductors How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. E 2017, 2019 NXP B.V. AFM907N Document Number: RF Device Data AFM907N Rev. 1,Semiconductors 05/2019 NXP 17